GaN-based high-electron-mobility transistor epitaxial wafer and preparation method thereof
A high electron mobility, gallium nitride based technology, applied in the field of gallium nitride based high electron mobility transistor epitaxial wafers and their preparation, can solve high activation energy, large lattice mismatch, poor crystal quality of epitaxial wafers, etc. problem, to achieve the effect of increasing the doping concentration
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[0030]In order to make the objects, technical solutions and advantages of the present disclosure, the present disclosure will be further described in detail below with reference to the accompanying drawings.
[0031]figure 1 It is a schematic structural diagram of a gallium nitride-based high electron mobility transistor epitaxial sheet provided by the embodiment of the present disclosure, such asfigure 1 As shown, the gallium gallium-based high electron mobility transistor epitaxial sheet includes a substrate 1 and a buffer layer 2, a high resistance buffer layer 3, a channel layer 4, an AlGa barrier layer 5, and a cap layer on the substrate 1. 6.
[0032]figure 2 It is a schematic structural diagram of a cap layer provided by the embodiment of the present disclosure, such asfigure 2 As shown, the cap layer 6 includes a first semiconductor layer 61 and a second semiconductor layer 62 that are sequentially laminated. The first semiconductor layer 61 is p-type doped inxGA1-xN / MGN superla...
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