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Thinning grinding wheels and components thereof, thinning silicon carbide substrates and thinning methods and applications

A silicon carbide substrate, silicon carbide technology, applied in the direction of bonding grinding wheels, electrical components, semiconductor devices, etc., can solve problems such as expensive, achieve high pass rate, low breakage rate, and reduce scratch depth.

Active Publication Date: 2022-03-18
HUNAN SANAN SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] At present, the material cost of silicon carbide substrates is still relatively expensive. How to reduce material loss, reduce the consumption of consumables, and thereby reduce the cost of subsequent processing has become a problem that needs to be solved.

Method used

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  • Thinning grinding wheels and components thereof, thinning silicon carbide substrates and thinning methods and applications
  • Thinning grinding wheels and components thereof, thinning silicon carbide substrates and thinning methods and applications
  • Thinning grinding wheels and components thereof, thinning silicon carbide substrates and thinning methods and applications

Examples

Experimental program
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Embodiment 1

[0070] This embodiment provides a thinning grinding wheel, which includes a grinding wheel base 3 and a thinning base 4 provided on the surface (lower surface in the figure) of the grinding wheel base 3 for contact with the silicon carbide substrate 1 . The thinned base 4 is formed by connecting a plurality of thinned teeth sequentially end to end along the circumference of the grinding wheel base 3 , and the thinned base 4 does not contain diamond solids and adhesives.

[0071] Each of the aforementioned thinning teeth has opposite left and right ends along the circumference of the grinding wheel base 3 , and the height of each thinning tooth gradually increases from the left end to the right end. The height difference between the left end and the right end of each thinning tooth is 10 μm, and the minimum height of each thinning tooth is 500 μm. Moreover, the width of each thinning tooth gradually increases from the left end to the right end. The width difference between the...

Embodiment 2

[0074] This embodiment provides a thinning grinding wheel, which includes a grinding wheel base 3 and a thinning base 4 provided on the surface (lower surface in the figure) of the grinding wheel base 3 for contact with the silicon carbide substrate 1 . The thinned base 4 is formed by connecting a plurality of thinned teeth sequentially end to end along the circumference of the grinding wheel base 3 , and the thinned base 4 does not contain diamond solids and adhesives.

[0075] Each of the aforementioned thinning teeth has opposite left and right ends along the circumference of the grinding wheel base 3 , and the height of each thinning tooth gradually increases from the left end to the right end. The height difference between the left end and the right end of each thinning tooth is 100 μm, and the minimum height of each thinning tooth is 10 μm. Moreover, the width of each thinning tooth gradually increases from the left end to the right end, the width difference between the ...

Embodiment 3

[0078] This embodiment provides a thinning grinding wheel, which includes a grinding wheel base 3 and a thinning base 4 provided on the surface (lower surface in the figure) of the grinding wheel base 3 for contact with the silicon carbide substrate 1 . The thinned base 4 is formed by connecting a plurality of thinned teeth sequentially end to end along the circumference of the grinding wheel base 3 , and the thinned base 4 does not contain diamond solids and adhesives.

[0079] Each of the aforementioned thinning teeth has opposite left and right ends along the circumference of the grinding wheel base 3 , and the height of each thinning tooth gradually increases from the left end to the right end. The height difference between the left end and the right end of each thinning tooth is 200 μm, and the minimum height of each thinning tooth is 1000 μm. Moreover, the width of each thinning tooth gradually increases from the left end to the right end, the width difference between th...

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Abstract

This application provides a thinning grinding wheel and its components, a thinning silicon carbide substrate, a thinning method and application, and relates to the technical field of silicon carbide processing. The thinned grinding wheel includes a thinned base formed by a grinding wheel base with a plurality of thinned teeth connected end to end along the circumferential direction of the grinding wheel base, and the thinned base does not contain diamond solids. The thinning grinding wheel can avoid scratches of varying depths during the process of thinning silicon carbide, and can reduce the loss and processing cost of the silicon carbide substrate. The silicon carbide thinning assembly containing the above-mentioned thinning grinding wheel can effectively thin silicon carbide. Using the above components for thinning operation can reduce the scratch depth on the surface of the silicon carbide substrate after thinning, and even reduce the damage layer on the surface of the silicon carbide substrate, improve the smoothness of the surface of the thinned substrate, and in addition, it can also reduce the damage to the silicon carbide substrate. The substrate damage rate during the thinning process is reduced and the qualification rate of substrate processing is improved. The obtained thinned silicon carbide substrate has a smooth surface and a high pass rate, and can be further used to process semiconductor devices.

Description

technical field [0001] The invention relates to the field of silicon carbide processing, in particular to a thinning grinding wheel and its components, a thinning silicon carbide substrate, and a thinning method and application. Background technique [0002] Because of its wide bandgap, high thermal conductivity, high breakdown electric field and high radiation resistance, silicon carbide single crystal materials can meet the needs of today's high power and strong radiation devices. It is an ideal substrate material for high-temperature, high-frequency, high-power and radiation-resistant devices, and has emerged in the fields of hybrid electric vehicles, high-voltage power transmission, LED lighting, and aerospace. Growing high-quality SiC crystals is the key to realizing these SiC-based devices. The basis for excellent performance. [0003] The hardness of SiC crystal can reach 9.2 on the Mohs scale, second only to the hardness of diamond. Therefore, during the processing...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24D7/06B24D7/16B24B41/06B24B7/22B24B49/00H01L29/16
CPCB24D7/06B24D7/16B24B41/068B24B7/228B24B49/006H01L29/1608
Inventor 汪良张洁王旻峰
Owner HUNAN SANAN SEMICON CO LTD