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Method for growing boron nitride membrane on graphite substrate

A technology of graphite substrate and boron nitride film, which is applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve problems such as not yet, and achieve the requirements of reducing process requirements, low stress and reducing energy loss. Effect

Inactive Publication Date: 2009-09-30
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But still do not have the method for the magnetron sputtering method involved in the present invention to grow high-quality cBN and eBN film on graphite substrate

Method used

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  • Method for growing boron nitride membrane on graphite substrate
  • Method for growing boron nitride membrane on graphite substrate
  • Method for growing boron nitride membrane on graphite substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The film deposition in the present invention is accomplished on a radio frequency magnetron sputtering system.

[0038] 1) Substrate pretreatment: Graphite substrate adopts 1×1cm 2, Thickness of about 2mm is mainly c-axis oriented flake graphite, after the growth surface is mechanically polished, rinsed with deionized water, then immersed in acetone and ethanol solutions for ultrasonic cleaning for 10 to 20 minutes, and then ultrasonically cleaned with deionized water Wash for 15-20 minutes, repeat the above-mentioned cleaning 2-3 times until the surface is very clean, take out the graphite sheet and dry it.

[0039] 2) Magnetron sputtering deposition process: use a radio frequency magnetron sputtering device, adopt the process of radio frequency magnetron sputtering, do not use temperature and bias substrate assistance; place the growth surface of the graphite substrate upward on the radio frequency magnetron On the substrate table of the sputtering deposition equipme...

Embodiment 2

[0042] 1) Substrate pretreatment: Same as in Example 1.

[0043] 2) Magnetron sputtering deposition process: use a radio frequency magnetron sputtering device, adopt the process of radio frequency magnetron sputtering, do not use temperature and bias substrate assistance; place the growth surface of the graphite substrate upward on the radio frequency magnetron The substrate table of the sputtering deposition equipment is used as the substrate; a hexagonal boron nitride sheet with a diameter of 50mm and a purity of 99.8% is used as the sputtering target, and the vacuum chamber is evacuated with a mechanical pump. When the pressure drops to 10Pa Turn on the molecular pump until the vacuum reaches 2×10 -3 Pa; into Ar (99.999%) and N 2 (99.999%) mixed gas, adjust the mass flowmeter to the ratio of nitrogen and argon to 1:6, keep the vacuum chamber pressure at 2Pa, radio frequency sputtering power at 150W, deposition time for 120 minutes, and finally prepare the cBN film.

[004...

Embodiment 3

[0046] 1) Substrate pretreatment: Same as in Example 1.

[0047] 2) Magnetron sputtering deposition process: use a radio frequency magnetron sputtering device, adopt the process of radio frequency magnetron sputtering, do not use temperature and bias substrate assistance; place the growth surface of the graphite substrate upward on the radio frequency magnetron The substrate table of the sputtering deposition equipment is used as the substrate; a hexagonal boron nitride sheet with a diameter of 50mm and a purity of 99.8% is used as the sputtering target, and the vacuum chamber is evacuated with a mechanical pump. When the pressure drops to 10Pa Turn on the molecular pump until the vacuum reaches 2×10 -3 Pa; into Ar (99.999%) and N 2 (99.999%) mixed gas, adjust the mass flowmeter to the ratio of nitrogen and argon to 1:6, keep the vacuum chamber pressure at 2Pa, radio frequency sputtering power at 120W, deposition time for 45 minutes, and finally prepare the eBN film.

[0048...

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Abstract

The invention relates to a method for growing a boron nitride membrane on a graphite substrate, and belongs to the technical field of functional membrane materials. The method comprises cleaning treatment of the graphite substrate and a technical process of magnetron sputtering deposition. The cleaning treatment of the graphite substrate comprises mechanical polishing, deionized water rinsing and ultrasonic cleaning of the graphite substrate soaked in acetone solution and ethanol solution respectively. The magnetron sputtering deposition process comprises the following steps: using hexangular boron nitride as a sputtering target material; and under the atmosphere of argon and nitrogen, adjusting radio-frequency power at 100 to 180 watts, depositing the sputtering target material for 0.5 to 70 hours, and growing a cBN or / and eBN membrane on the graphite substrate. The method has the following remarkable characteristics: the purity of the grown BN membrane is high; the membrane which is not prepared by biasing the substrate has low stress, and the surface of the membrane has no crack; the substrate is not heated so as to reduce the process requirement of equipment and lower energy loss and preparation cost; and the BN membrane does not peel off when the BN membrane is placed in the air for a long time.

Description

technical field [0001] The invention belongs to the technical field of preparing functional film materials by using a physical vapor deposition method (PVD). It particularly relates to the method of using graphite as the substrate material and growing cubic boron nitride (cBN), Explosion boron nitride (eBN) and their mixed phases on the surface by changing the radio frequency power of the magnetron sputtering method. Background technique [0002] Boron nitride (BN) is a III-V semiconductor material, and boron nitride has different structures such as hexagonal phase (hBN), cubic phase (cBN), and hexagonal phase (wBN). cBN is a kind of artificial synthetic material. So far, no primary mineral has been found in nature. It has high hardness, high thermal conductivity, high resistivity, high temperature oxidation resistance, good chemical stability, and full-spectrum permeability. It has obvious advantages in hard cutting tools (especially processing iron-based materials), wide-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/02
Inventor 李红东杨旭昕李英爱邹广田
Owner JILIN UNIV
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