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Fluorine-based SiC-CVD crystal and film growth process tail gas FTrPSA all-component recycling method

A thin-film growth and full-component technology, applied in chemical instruments and methods, hydrogen fluoride, fluorine/hydrogen fluoride, etc., can solve the problems of high preparation cost, high cost, and inability to recycle and reuse, so as to realize recycling and reduce tail gas The effect of emissions

Active Publication Date: 2021-05-11
SICHUAN TECHAIRS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to its high cost, it is still unable to compete with traditional Si-based materials in many fields. Among them, the precursors such as chlorosilane and C2+ that are consumed in the SiC-CVD crystal and epitaxial growth processes are expensive to prepare and cannot be obtained from exhaust gas. recycling

Method used

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  • Fluorine-based SiC-CVD crystal and film growth process tail gas FTrPSA all-component recycling method
  • Fluorine-based SiC-CVD crystal and film growth process tail gas FTrPSA all-component recycling method
  • Fluorine-based SiC-CVD crystal and film growth process tail gas FTrPSA all-component recycling method

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Experimental program
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Effect test

Embodiment 1

[0040] Such as figure 1 Shown, a kind of fluorine-based SiC-CVD crystal and thin film growth process tail gas FTrPSA full component recovery and reuse method, feed gas with ethylene (C 2 h 4 ) as the main carbon (C) source, silicon tetrafluoride (SiF 4 ) is the silicon (Si) source, and adding hydrogen fluoride (HF) mainly a small amount of hydrogen chloride (HCl) and hydrogen (H 2 ) as the carrier gas, carry out chemical vapor deposition (CVD) on the substrate based on silicon carbide (SiC) to prepare the tail gas of the fluorine-based SiC-CVD thin film growth process of SiC thin film epitaxial wafers, wherein, in addition to a large amount of H 2 In addition, the main active ingredient is C 2 h 4 、SiF 4 , HF, HCl, and a small amount of methane (CH 4 ), SiH 4 , chlorosilanes, fluoroalkanes (CH m f n ), and trace amounts of carbon monoxide (CO), carbon dioxide (CO 2 ), water (H 2 O) and silicon dioxide (SiO 2 ), Si / C fine particles, normal pressure and temperature. ...

Embodiment 2

[0052] Such as figure 2 Shown, on the basis of embodiment 1, contain the ethylene of higher concentration (C 2 h 4 ) working conditions, the purified raw gas first enters the shallow cold oil absorption process, and the non-condensable gas 1 flowing out from it enters the medium-temperature pressure swing adsorption concentration process to form the intermediate gas of the non-adsorption phase, and the non-condensable gas 2 formed after condensation After entering the tail gas absorption process, the crude SiF formed after condensation 4 The liquid enters the HF rectification process, and the concentrated gas of the adsorption phase formed in the medium temperature and pressure swing adsorption concentration process enters the chlorosilane spray absorption process, and the non-condensable gas 3 flowing out from it returns to the shallow cooling oil absorption process for further recovery and effective Components, the absorption liquid flowing out from it, enters into multi-...

Embodiment 3

[0054] Such as image 3 Shown, on the basis of embodiment 1, purifying SiF in raw gas 4 / HF concentration is high and the chloride concentration including HCl / chlorosilane is less than 1%, the purified raw gas first enters the medium temperature pressure swing adsorption concentration process, and the formed concentrated gas enters the new condensation after cooling and pressurization The non-condensable gas 1 formed thus enters the shallow cold oil absorption process, and the non-condensable gas 2 formed therefrom is mixed with the intermediate gas from the medium temperature pressure swing adsorption process and enters the tail gas absorption process, and then enters the tail gas absorption process from the medium temperature pressure swing adsorption concentration process The outflowing intermediate gas in the non-adsorption phase enters the tail gas absorption process for treatment, and the concentrated gas formed from the medium temperature pressure swing adsorption conce...

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Abstract

The invention discloses a fluorine-based SiC-CVD crystal and film growth process tail gas FTrPSA all-component recycling method, and relates to the environmental protection field of recycling effective components in tail gas in the epitaxial growth process of a third-generation semiconductor material silicon carbide (SiC) crystal and a film and returning the effective components to a semiconductor process for recycling, the required main effective components such as C2+, SiF4, HF, HCl, chlorosilane and even H2 are separated and purified by adopting coupling and circulating operation among chlorosilane spraying absorption, C2+ shallow cooling oil absorption, shallow cooling rectification in chlorosilane and medium-temperature pressure swing adsorption concentration, or returned to a SiC-CVD process for recycling, or returned to a system provided by the invention for recycling, therefore, the recycling of process tail gas resources is realized, and the difficulty that C2+ and SiF4 / HF / HCl in the tail gas are difficult to separate is solved.

Description

technical field [0001] The present invention relates to the third-generation semiconductor material silicon carbide (SiC) crystal and the tail gas in the epitaxial growth process of thin film contains commonly used "carbon source" - carbon two and carbon two or more light hydrocarbon components (C2+) such as ethylene or propane, "Silicon source" such as silicon tetrafluoride (SiF 4 ), the recovery of effective components containing hydrogen fluoride (HF) / hydrogen chloride (HCl), and the return to the environmental protection field of semiconductor process recycling, more specifically, it involves a fluorine-based SiC-CVD (silicon carbide chemical vapor deposition) crystal and Thin film growth process tail gas FTrPSA (full temperature range pressure swing adsorption) full component recovery and reuse method. Background technique [0002] As a third-generation semiconductor material, silicon carbide (SiC) has been widely used in IT and consumer electronics, automobiles, photo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B7/19C01B33/107C01B7/07C07C7/04C07C11/04C07C9/08
CPCC01B7/196C01B33/10705C01B7/195C07C7/04C01B7/0712C01B7/0706C01B33/10778C07C11/04C07C9/08
Inventor 钟雨明钟娅玲汪兰海陈运唐金财蔡跃明蒋强
Owner SICHUAN TECHAIRS