A kind of lnoi mode spot converter and preparation method based on subwavelength grating
A technology of sub-wavelength grating and mode-spot converter, which is applied in the direction of optical waveguide light guide, optical waveguide coupling, instrument, etc., can solve problems such as difficult LNOI optical chip production, limited optical mode field amplification ability, and weakened limitation ability, etc., to achieve Promote practical application, reduce effective refractive index, and reduce the effect of refractive index difference
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[0054] Such as Image 6 Shown is the processing steps of the preparation method of the LNOI mold spot converter of the present invention, comprises the following steps:
[0055] In step s1, an etching mask for the tapered waveguide 1 on the top layer is prepared. The waveguide etching mask includes photoresist and metal mask. The photoresist includes HSQ negative resist, ZEP 520A positive resist and 7908 positive resist. The material of the metal mask is Ni or Ti / Ni, or Cr / Ni.
[0056] In step s2, the tapered waveguide 1 on the top layer is etched. Waveguide etching adopts dry etching process, reactive ion etching or inductively coupled plasma etching, and the etching gas is Ar, or SF 6 / Ar mixed gas.
[0057] In step s3 , an etching mask for the underlying tapered waveguide 2 and the tapered subwavelength grating 3 is prepared.
[0058] In step s4, the underlying tapered waveguide 2 and the tapered sub-wavelength grating 3 are etched.
[0059] Step s5, SiO 2 Dielectric ...
Embodiment 1
[0067] A 3-inch x-cut LNOI wafer is selected, the thickness of the lithium niobate film is 600nm, and the SiO 2 The thickness of the insulating layer is 2 μm, the substrate is Si material, and the preparation process steps are:
[0068] A1) Preparation of etching mask for the tapered waveguide 1 on the top layer: Spin-coat the negative resist HSQ at a speed of 2000 rpm / min, and bake on a hot plate at 150°C for 120 seconds.
[0069] A2) Etching of the tapered waveguide 1 on the top layer: Ar plasma ICP etching, the etching depth of the waveguide is 300nm.
[0070] A3) Preparation of the etching mask of the bottom tapered waveguide 2 and the tapered subwavelength grating 3: spin-coat the negative resist HSQ at a speed of 2000 rpm / min, and bake on a 150° C. hot plate for 120 seconds.
[0071] A4) Etching of the bottom tapered waveguide 2 and the tapered subwavelength grating 3: Ar plasma ICP dry etching is used, and the waveguide etching depth is 300 nm.
[0072] A5) First SiO2...
Embodiment 2
[0080] A 3-inch x-cut LNOI wafer is selected, the thickness of the lithium niobate film is 600nm, and the SiO 2 The thickness of the insulating layer is 2 μm, and the substrate is made of Si material. The main preparation process steps are:
[0081] B1) Preparation of etching mask for top-layer tapered waveguide 1: spin-coat photoresist 7908, evaporate metal Ti / Ni20 / 150nm after exposure and development, soak in acetone, remove photoresist by ultrasonication, and then ultrasonically in ethanol for 5 minutes, then Rinse with deionized water, and finally put it in the dryer to dry.
[0082] B2) Etching of the tapered waveguide 1 on the top layer: Ar plasma ICP etching, the etching depth of the waveguide is 300nm.
[0083] B3) Preparation of bottom tapered waveguide 2 and sub-wavelength grating 3 etching mask: spin-coat photoresist 7908, evaporate metal Ti / Ni 20 / 150nm after exposure and development, soak in acetone, remove photoresist by ultrasonic, and then wash in ethanol Ultr...
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