Hybrid charging control device and control method

Abstract

The invention discloses a hybrid charging control device comprising a control module and a hybrid topology circuit, the hybrid topology circuit comprises an uncontrolled rectification circuit, a converter circuit and a hybrid parallel device, and the hybrid parallel device comprises a Si IGBT and a SiC MOSFET which are connected in parallel; the control module comprises a voltage loop control unit and a current loop control unit, the voltage loop control unit adopts a fractional order PI control strategy, and the current loop control unit adopts a fractional order prediction control strategy. Compared with a pure Si IGBT (Insulated Gate Bipolar Transistor) and a pure SiCMOSFET (Silicon Controlled Metal-Oxide-Semiconductor Field Effect Transistor), the hybrid parallel device has lower switching loss, open circuit redundancy capability and low cost; the device and method have great advantages in the aspect of cost / performance compromise; meanwhile, a traditional integer order control scheme is improved, and the alternating current side power factor and the electric energy quality of the Si IGBT / SiC MOSFET hybrid PFC circuit and the direct current side voltage precision and the dynamic characteristic can be remarkably improved.

Description

technical field [0001] The invention relates to the field of power electronic devices and controls, in particular to a hybrid charging control device and control method. Background technique [0002] With the development of power electronics technology, charging devices are widely used in equipment systems such as electric vehicles, industrial automation, communication base stations, new energy micro-grids, aerospace and ships. However, these complex and special application environments put forward more stringent requirements on the power density, efficiency and reliability of the power supply device. At present, the key factors restricting the development of power supply devices are the control technology in the application of power electronic devices and charging devices. Therefore, research on new power electronic devices with low loss, high frequency and high reliability and more advanced and reliable control technologies is of great importance to The development and ind...

AI Technical Summary

Problems solved by technology

[0003] In fact, pure Si IGBTs and SiC MOSFETs are difficult to effectively meet these stringent requirements

And the traditional PI control method cannot achieve satisfactory control effect in these complex and special application environments

At the same time, because many physical phenomena in the control object have fractional-order characteristics, and integer-order equations cannot accurately describe these, this means that the use of integer-order control schemes will face the bottleneck problem that the control accuracy is difficult to further improve

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