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Passivation contact cell and preparation method and application thereof

A battery and oxide layer technology, applied in the field of solar cells, can solve the problems of battery efficiency and solar energy efficiency, and achieve good light conversion efficiency and yield

Active Publication Date: 2021-05-21
CSI CELLS CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] CN206340553U discloses an N-type double-sided solar cell, comprising a silicon nitride layer, an aluminum oxide layer, a boron diffusion layer, an N-type silicon substrate, a phosphorus diffusion layer, and a silicon nitride passivation anti-reflection film that are stacked in sequence. The silicon nitride layer and the aluminum oxide layer constitute a laminated aluminum oxide / silicon nitride passivation layer, and etching grooves are formed on the aluminum oxide / silicon nitride passivation layer for corresponding to each sub-gate line electrode, Sub-gate electrodes are filled in the etched grooves to form ohmic contacts, but the battery efficiency still needs to be improved
[0004] CN105244412A discloses a passivation method for a boron emitter of an N-type crystalline silicon cell, the passivation steps are as follows: first, a phosphorus-doped N+ layer and a boron emitter P+ layer are respectively formed on both sides of an N-type silicon substrate; Type silicon substrate is subjected to oxidation passivation treatment, and the silicon oxide thin film is respectively formed on the phosphorus-doped N+ layer and the boron emitter P+ layer; Finally, SiNx thin film is deposited on the silicon oxide thin film on both sides of the N-type silicon substrate; the preparation process of the invention It is relatively simple, with strong process controllability, low equipment cost, and low cost of consumables. It is compatible with current crystalline silicon cell manufacturing production line equipment and is suitable for large-scale industrial production, but its solar energy efficiency still needs to be improved.

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  • Passivation contact cell and preparation method and application thereof
  • Passivation contact cell and preparation method and application thereof
  • Passivation contact cell and preparation method and application thereof

Examples

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Embodiment 1

[0125] This embodiment provides a method for preparing a passivated contact electrode, comprising the following steps:

[0126] (1) The N-type base layer (phosphorus-doped monocrystalline silicon chip) is pre-textured, and then the N-type base layer after the texture is divided into three steps for boron diffusion. In boron bromide, conduct source deposition at a temperature of 900°C for 40 minutes, in the second step, carry out push treatment at a temperature of 1050°C for 60 minutes in nitrogen gas with a flow rate of 15 slm, and in the third step at a flow rate of 15 slm of oxygen In the process, oxidation treatment was carried out at a temperature of 1050°C for 80 minutes to obtain an N-type base layer in which the emitter layer and the borosilicate glass layer were sequentially stacked on the front, back and sides;

[0127] (2) The front, back and sides obtained in step (1) are all sequentially laminated with the N-type base layer of the emitter layer and the borosilicate...

Embodiment 2

[0138] This embodiment provides a method for preparing a passivated contact electrode, comprising the following steps:

[0139] (1) The N-type base layer (phosphorus-doped monocrystalline silicon wafer) is pre-textured, and then the N-type base layer after the texture is divided into three steps for boron diffusion. In boron bromide, the source deposition was carried out at a temperature of 850°C for 50 minutes, the second step was carried out at a temperature of 1000°C for 100 minutes in a nitrogen gas with a flow rate of 20slm, and the third step was simultaneously passed through a flow rate of 20slm Oxygen, oxidize at a temperature of 1100°C for 60 minutes to obtain an N-type base layer with an emitter layer and a borosilicate glass layer laminated in sequence on the front, back and sides;

[0140] (2) The N-type base layer with emitter layer and borosilicate glass layer laminated in sequence on the front, back and side surfaces obtained in step (1) is subjected to hydroflu...

Embodiment 3

[0148] This embodiment provides a method for preparing a passivated contact cell, comprising the following steps:

[0149] (1) The N-type base layer (phosphorus-doped monocrystalline silicon wafer) is pre-textured, and then the N-type base layer after the texture is divided into three steps for boron diffusion. In boron bromide, conduct source deposition at a temperature of 950°C for 30 minutes, in the second step, carry out push treatment at a temperature of 1100°C for 40 minutes in a nitrogen gas with a flow rate of 10 slm, and in the third step in an oxygen flow rate of 10 slm Under the condition of oxidizing at 1000°C for 100 minutes, an N-type base layer with an emitter layer and a borosilicate glass layer laminated in sequence on the front, back and side surfaces was obtained;

[0150] (2) The front, back and sides obtained in step (1) are all sequentially laminated with the N-type base layer of the emitter layer and the borosilicate glass layer, and the concentration is 1...

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Abstract

The invention provides a passivation contact cell and a preparation method and application thereof, the preparation method of the passivation contact cell comprises a forming method of an oxide layer, and the forming method of the oxide layer comprises the following steps: carrying out chemical oxidation and then carrying out thermal oxidation to form the oxide layer; according to the passivation contact preparation method, the oxidation layer grows through chemical oxidation and thermal oxidation superposition treatment, so that the oxidation layer can be quickly and uniformly formed; and the passivation contact cell obtained by the preparation method of the passivation contact cell has relatively good light conversion efficiency and yield.

Description

technical field [0001] The invention belongs to the field of solar cells, and relates to a passivated contact cell and its preparation method and application, in particular to a preparation method of a passivated contact cell, a passivated contact cell prepared by the preparation method, and a passivated contact cell Applications. Background technique [0002] In recent years, with the development of monocrystalline solar cells, especially the successful industrialization of passivated emitter and back field (PERC) technology, the efficiency of mass-produced cells on P-type silicon wafers is approaching the bottleneck. More attention is paid to N-type batteries with higher carrier lifetime and smaller attenuation. Three battery structures, including N-type PERT, heterojunction (HJT) and tunnel oxide passivation contact (TOPCon), have gradually attracted the attention of the industry. Among them, the TOPCon structure uses an ultra-thin oxide layer and doped polysilicon to f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/042H01L31/0224
CPCH01L31/1868H01L31/042H01L31/022425Y02E10/50
Inventor 安欣睿陈海燕张临安李兵邓伟伟
Owner CSI CELLS CO LTD