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Preparation method and application of a hot-pressed photonic polycrystalline semiconductor

A polycrystalline semiconductor and photon technology, applied in phototherapy, crystal growth, polycrystalline material growth, etc., can solve the problem of poor far-infrared emissivity and mechanical strength, inability to emit sustainable far-infrared rays, and low yield of infrared optical materials and other issues to achieve the effect of improving immunity, promoting normal quantum vibration, and activating cell activity

Active Publication Date: 2022-05-10
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, when the far-infrared materials in the prior art are applied to equipment, the mobility of the material is large, the loss is large during use, and stable and sustainable far-infrared rays cannot be emitted; secondly, the preparation method in the prior art produces The yield of infrared optical materials is relatively low, and the far-infrared emissivity and mechanical strength are relatively poor. Therefore, providing a method for preparing hot-pressed photonic polycrystalline semiconductors has become an urgent problem in this field.

Method used

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preparation example Construction

[0024] In order to solve the above technical problems, the first aspect of the present invention provides a method for preparing a hot-pressed photonic polycrystalline semiconductor, at least including the following steps:

[0025] (1) Mix the solid inorganic matter and the rare earth salt compound, and perform firing to obtain a fired mixture A, transfer the fired mixture A to a reaction kettle to react for a period of time, cool it, and then grind it to obtain a powder material B;

[0026] (2) Heating the carrier, adding the surface treatment agent and powder material B, and stirring, then feeding into an extruder for extrusion and granulation, and drying to obtain a hot-pressed photonic polycrystalline semiconductor.

[0027] In a preferred embodiment, the firing temperature in the step (1) is 1500-1700°C.

[0028] In a preferred embodiment, the temperature of the firing mixture A in the step (1) is 900-1000° C. during the reaction in the reactor.

[0029] In a preferred e...

Embodiment 1

[0049] A method for preparing a hot-pressed photonic polycrystalline semiconductor, the preparation method comprising the following steps:

[0050] (1) Mix 5 parts of zirconia, 5 parts of tin oxide, 4 parts of neodymium chloride, 6 parts of cerium acetate, 4 parts of scandium chloride, 3 parts of kaolinite, 1 part of black tourmaline and 1.2 parts of hydrotalcite, at 1500 ℃ in a high-temperature furnace to obtain a firing mixture A; transfer the firing mixture A to a reactor at a temperature of 950°C and a pressure of 15 MPa, and react in a high-temperature and high-pressure reactor for 35 hours. After cooling, grind to obtain a powder material B ;

[0051] (2) Heat 45 parts of linear low density polyethylene to 120°C, add 0.3 parts of γ-methacryloxypropyl trimethoxysilane and powder material B, mix and stir for 18 hours, and send them into the extruder for extrusion After granulation and drying, a hot-pressed photonic polycrystalline semiconductor can be obtained.

[0052] ...

Embodiment 2

[0054] A method for preparing a hot-pressed photonic polycrystalline semiconductor, the preparation method comprising the following steps:

[0055] (1) Mix 5 parts of zirconia, 5 parts of tin oxide, 4 parts of neodymium chloride, 6 parts of cerium acetate, 4 parts of scandium chloride, 3 parts of kaolinite, 1 part of black tourmaline and 1.2 parts of hydrotalcite, at 1600 ℃ in a high-temperature furnace to obtain a firing mixture A; transfer the firing mixture A to a reactor at a temperature of 950°C and a pressure of 15 MPa, and react in a high-temperature and high-pressure reactor for 35 hours. After cooling, grind to obtain a powder material B ;

[0056] (2) Heat 45 parts of linear low density polyethylene to 120°C, add 0.3 parts of γ-methacryloxypropyl trimethoxysilane and powder material B, mix and stir for 18 hours, and send them into the extruder for extrusion After granulation and drying, a hot-pressed photonic polycrystalline semiconductor can be obtained.

[0057] ...

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Abstract

The invention relates to the technical field of new materials, to the technical fields of polycrystalline semiconductor materials and smart wearables, and in particular to a preparation method and application of hot-pressed photonic polycrystalline semiconductors. A method for preparing a hot-pressed photonic polycrystalline semiconductor, at least including the following steps: (1) mixing solid inorganic matter and a rare earth salt compound, and firing to obtain a firing mixture A, and transferring the firing mixture A to a reaction After reacting in the kettle for a period of time, cool down and then grind to obtain powder material B; (2) heat the carrier, add surface treatment agent and powder material B, and stir, and then send it into an extruder for extrusion. Granules, dried, and hot-pressed photonic polycrystalline semiconductors are obtained. In the present invention, by reasonably setting the firing temperature, reaction temperature and reaction pressure, the hot-pressed photonic polycrystalline semiconductor material prepared by the method in the technical solution has a high yield and good mechanical strength, and can be applied to smart wearables.

Description

technical field [0001] The invention relates to the technical field of new materials, to the technical fields of polycrystalline semiconductor materials and smart wearables, and in particular to a preparation method and application of hot-pressed photonic polycrystalline semiconductors. Background technique [0002] Hot pressing technology is a new technology for the preparation of infrared optical materials developed in the past 20 years. The infrared optical materials prepared by this technology have multiple functions, which can increase the vitality of cells, strengthen metabolism, and enable The substance exchange in the skin is in a stable state, and it has the functions of anti-inflammatory and detumescence. In addition, far infrared enhances tissue nutrition, activates tissue metabolism, increases cell oxygen supply, strengthens cell regeneration, improves blood oxygen supply in wards, controls the development of inflammation and localizes it, and accelerates lesion ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): A61N5/06C30B28/02C30B29/00
CPCA61N5/0613C30B28/02C30B29/00A61N2005/066
Inventor 张得龙冼光
Owner SOUTH CHINA NORMAL UNIVERSITY
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