Microwave composite dielectric substrate for high-frequency and high-speed environment and preparation method of dielectric substrate

Abstract

The invention relates to a microwave composite dielectric substrate for a high-frequency and high-speed environment and a preparation method of the microwave composite dielectric substrate, and belongs to the field of microwave dielectrics. Silicon dioxide ceramic powder with a porous structure is constructed by using the nano solid silicon dioxide ceramic powder and tetraethyl orthosilicate through a hydrothermal method, compared with mesoporous silicon dioxide generated by directly using tetraethyl orthosilicate as a single silicon source, the yield is higher, the reaction conditions are relatively simple, and batch production is hopeful; porous silicon dioxide ceramic nanospheres are modified by a coupling agent and then are mixed with polytetrafluoroethylene, and the modified silicon dioxide ceramic nanospheres are uniformly mixed with a polymer matrix through calendaring molding and a vacuum hot pressing method, so that the plate is compact and has high dielectric properties and mechanical strength; and the prepared microwave composite dielectric substrate is low in dielectric constant and low in thermal expansion coefficient.

Description

technical field [0001] The invention relates to the field of microwave dielectrics, in particular to the preparation technology of microwave composite dielectric substrates, and in particular to a preparation method of microwave composite dielectric substrates for high-frequency and high-speed environments, which is applied to the manufacture of circuit boards, especially 5G high-frequency circuit boards. Background technique [0002] With the advent of the Internet 5G era, people's demand for information processing and communication is increasing day by day, and the development of miniaturization, high integration and high frequency of equipment has put forward higher requirements for functional information materials. According to the requirements of the application environment, high-frequency and high-speed substrate materials need to have excellent dielectric properties, that is, low dielectric constant and low dielectric loss. At the same time, in order to avoid the dime...

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Problems solved by technology

[0008] However, using tetraethylorthosilicate as the silicon source adopts The yield of hollow / mesoporous silica microspheres prepared by this method is relatively low, and the reaction conditions are relatively harsh, which is not suitable for the production of composite dielectric substrates; and the direct purchase of hollow / mesoporous silica microspheres is too expensive to mass-produce. question

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