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NIP heterojunction solar cell and manufacturing method thereof

A technology of solar cells and manufacturing methods, applied in the field of solar cells, can solve the problems of limiting photogenerated electron collection efficiency and short-circuit current density, low photoelectric conversion efficiency, and high cost of stacked cells, and achieve excellent bipolar carrier transport characteristics, The effect of improving photoelectric conversion efficiency and increasing fill factor

Pending Publication Date: 2021-06-18
BEIJING JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, on the one hand, the disadvantage of laminated batteries is that the cost is higher
On the other hand, copper indium gallium selenide semiconductor materials have more recombination of electrons, which limits the collection efficiency and short-circuit current density of photogenerated electrons, resulting in low photoelectric conversion efficiency.

Method used

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  • NIP heterojunction solar cell and manufacturing method thereof
  • NIP heterojunction solar cell and manufacturing method thereof

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Embodiment Construction

[0033] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0034] The present invention provides a kind of NIP heterojunction solar cell, see figure 1 , the heterojunction solar cell specifically includes:

[0035] From top to bottom: transparent front electrode, electron transport layer, N-type perovskite layer, I-type copper indium gallium selenide layer, P-type copper indium gallium selenide laye...

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Abstract

The invention provides an NIP heterojunction solar cell and a manufacturing method thereof. The NIP heterojunction solar cell sequentially comprises a transparent front electrode, an electron transport layer, an N-type perovskite layer, an I-type copper indium gallium selenium layer, a P-type copper indium gallium selenium layer, a molybdenum electrode layer and a cell substrate from top to bottom. The manufacturing method comprises the following steps: preparing the molybdenum electrode layer on the cell substrate by adopting a direct current magnetron sputtering method; sequentially depositing the P-type CIGS layer and the I-type CIGS layer on the molybdenum electrode layer by adopting a three-step co-evaporation method; spin-coating a mixed solvent on the CIGS layer, and then obtaining a perovskite layer by heating; preparing a zinc oxide layer in the thickness of 70 nanometers on the N-type perovskite layer by adopting a direct-current magnetron sputtering method; and preparing an AZO layer in the thickness of 500 nanometers on the electron transport layer by adopting a direct-current magnetron sputtering method. According to the invention, the electron collection efficiency can be improved, and the photoelectric conversion efficiency of the solar cell is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a NIP heterojunction solar cell and a manufacturing method thereof. Background technique [0002] Solar cells are components that directly convert light energy into electrical energy. Since the range of solar radiation spectrum (0-4eV) is very wide, according to the principle of photovoltaic effect, a single-junction solar cell composed of a single semiconductor material can only convert solar radiation spectrum Part of the light energy is converted into electrical energy, the effective utilization rate of solar energy is low, and the output voltage is low. [0003] In the prior art, stacked cells are used to realize the response of the solar cell to the response wavelength. In recent years, perovskite solar cells using a stacked structure have attracted widespread attention in the photovoltaic industry. The photoelectric conversion efficiency of perovskite solar cells has ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46H01L51/42H01L51/48
CPCH10K71/00H10K71/12H10K85/30H10K30/40H10K2102/00Y02E10/549Y02P70/50
Inventor 宋丹丹朱成皖刘武徐征赵谡玲乔泊
Owner BEIJING JIAOTONG UNIV
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