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Film-forming material for lithography, film-forming composition for lithography, lower layer film for lithography, and pattern-forming method

A composition and lithography technology are applied in the direction of photosensitive material processing, micro-lithography exposure equipment, photosensitive materials used in photomechanical equipment, etc., which can solve the problems of resist pattern collapse, resolution problems, and difficulty in obtaining it, and achieve Excellent film flatness and embedding characteristics

Inactive Publication Date: 2021-06-18
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the miniaturization of the resist pattern progresses, there will be a problem of resolution and a problem of collapse of the resist pattern after development, so the thinning of the resist is expected.
However, it is difficult to obtain a sufficient film thickness of the resist pattern in substrate processing only by thinning the resist

Method used

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  • Film-forming material for lithography, film-forming composition for lithography, lower layer film for lithography, and pattern-forming method
  • Film-forming material for lithography, film-forming composition for lithography, lower layer film for lithography, and pattern-forming method
  • Film-forming material for lithography, film-forming composition for lithography, lower layer film for lithography, and pattern-forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0219] Hereinafter, although an Example and a comparative example demonstrate this invention in more detail, this invention is not limited to these examples at all.

[0220] [molecular weight]

[0221] The molecular weight of the synthesized resin was measured by GPC-MS analysis using Acquity UPLC / MALDI-Synapt HDMS manufactured by Water Corporation.

[0222] [Evaluation of heat resistance]

[0223] Using the EXSTAR6000TG-DTA device manufactured by SII Nanotechnology Inc., put about 5 mg of the sample into an aluminum non-sealed container, and raise the temperature to 500°C at a temperature increase rate of 10°C / min in a nitrogen (100ml / min) flow, thereby measuring the heat Weight reduction. From a practical point of view, the following A or B evaluation is preferable. When rated as A or B, it has high heat resistance and can be applied to high temperature baking.

[0224]

[0225] A: The thermogravimetric reduction at 400°C is less than 10%

[0226] B: The thermogravime...

Synthetic example 1

[0234] (Synthesis Example 1) Synthesis of BMI Citraconimide Resin

[0235] A container with an inner volume of 100 ml equipped with a stirrer, a condenser, and a burette was prepared. Into this container, 2.4 g of diaminodiphenylmethane oligomer obtained as a follow-up test of Synthesis Example 1 of Japanese Patent Application Laid-Open No. 2001-26571, 4.56 g (44.0 mmol) of citraconic anhydride (manufactured by Kanto Chemical Co., Ltd.) ), dimethylformamide 40ml and toluene 60ml, add p-toluenesulfonic acid 0.4g (2.3mmol) and polymerization inhibitor BHT 0.1g, prepare reaction solution. The reaction solution was stirred at 110° C. for 8.0 hours to react, and the produced water was recovered in a Dean-Stark trap under azeotropic dehydration. Next, after cooling the reaction liquid to 40 degreeC, it dripped at the beaker which put 300 ml of distilled water, and deposited the product. After filtering the obtained slurry solution, the residue was wash|cleaned with methanol, and 4...

Synthetic example 2

[0238] (Synthesis example 2) Synthesis of BAN citraconimide resin

[0239] A container with an inner volume of 100 ml equipped with a stirrer, a condenser, and a burette was prepared. In this container, 6.30 g of biphenyl aralkyl type polyaniline resin (product name: BAN, manufactured by Nippon Kayaku Co., Ltd.), 4.56 g (44.0 mmol) of citraconic anhydride (manufactured by Kanto Chemical Co., Ltd.), dimethyl 40ml of methyl formamide and 60ml of toluene were added, 0.4g (2.3mmol) of p-toluenesulfonic acid and 0.1g of polymerization inhibitor BHT were added to prepare a reaction solution. The reaction liquid was stirred at 110° C. for 6.0 hours to react, and the produced water was recovered in a Dean-Stark trap under azeotropic dehydration. Next, after cooling the reaction liquid to 40 degreeC, it dripped at the beaker which put 300 ml of distilled water, and deposited the product. After filtering the obtained slurry solution, the residue was washed with methanol and subjected ...

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PUM

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Abstract

Provided is a film-forming material for lithography which contains a maleimide resin represented by formula (1A). [Chemical compound 1].

Description

technical field [0001] The present invention relates to a film-forming material for lithography, a film-forming composition for lithography containing the material, an underlayer film for lithography formed using the composition, and a pattern forming method (such as a resist patterning method) using the composition or circuit pattern method). Background technique [0002] In the manufacture of semiconductor devices, microfabrication is performed by photolithography using photoresist materials. In recent years, along with higher integration and higher speed of LSIs, further miniaturization based on pattern rules has been sought. Furthermore, in photolithography using light exposure, which is currently used as a general technique, the limit of the intrinsic resolution derived from the wavelength of the light source is getting closer. [0003] The light source for lithography used in resist pattern formation has been shortened from KrF excimer laser (248 nm) to ArF excimer l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G73/12C08F2/48G03F7/11G03F7/20G03F7/26
CPCC08F2/48C08G73/12G03F7/094G03F7/0388C08G73/126C08L79/085C08L2203/16C08G73/122C08L79/02C08L63/00G03F7/11G03F7/20G03F7/26C08K5/0025H01L21/0276H01L21/31144H01L21/32139G03F7/0392
Inventor 山田弘一堀内淳矢牧野岛高史越后雅敏
Owner MITSUBISHI GAS CHEM CO INC
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