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Nano material, preparation method thereof and quantum dot light-emitting diode

A technology of quantum dot light-emitting and nanomaterials, which is applied in the fields of quantum dot light-emitting diodes, nanomaterials and their preparation, can solve the problem that hole transport performance needs to be improved, etc. Effect

Active Publication Date: 2021-06-29
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a kind of nanometer material and preparation method thereof, aim to solve V 2 o 5 As a hole-transport material for light-emitting diodes, the hole-transport performance needs to be improved

Method used

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  • Nano material, preparation method thereof and quantum dot light-emitting diode
  • Nano material, preparation method thereof and quantum dot light-emitting diode

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preparation example Construction

[0024] Such as figure 1 As shown, the second aspect of the embodiments of the present invention provides a method for preparing nanomaterials, comprising the following steps:

[0025] Prepare an aqueous solution of a vanadium source, a sulfur source, and a zinc source, add a protonic acid to the aqueous solution, and adjust the pH of the aqueous solution to be less than or equal to 2; perform a hydrothermal reaction at a temperature not lower than 150° C. to prepare nanomaterials; The nanomaterials include V 2 o 5 nanoparticles well doped at V 2 o 5 S element and Zn element in the nanoparticle lattice.

[0026] In the preparation method of nanomaterials provided in the embodiments of the present invention, the vanadium source, the sulfur source and the zinc source are reacted in a hydrothermal environment with a pH of less than or equal to 2, and S and Zn co-doped V can be prepared. 2 o 5 nanoparticles. The method is simple to operate, the conditions are mild and easy t...

Embodiment 1

[0065] A kind of S, Zn co-doped V 2 o 5 The preparation method of nanometer material, comprises the following steps:

[0066] Add 1g of ammonium metavanadate and appropriate amount of thiourea and zinc chloride to 30ml of water to configure an aqueous solution, in which the molar ratio of vanadium atom: sulfur atom to zinc atom is 1:0.05; the molar ratio of sulfur atom: zinc atom is 1: 3. After being completely dissolved, 3 ml of concentrated hydrochloric acid was added to the aqueous solution to adjust the pH2 o 5 nanomaterials.

Embodiment 2

[0068] A kind of S, Zn co-doped V 2 o 5 The preparation method of nanometer material, comprises the following steps:

[0069] Add 1g of sodium metavanadate and appropriate amount of sodium sulfide and sodium nitrate to 30ml of water to configure an aqueous solution, in which the molar ratio of vanadium atom: sulfur atom to zinc atom is 1:0.08; the molar ratio of sulfur atom: zinc atom is 1: 2.5 . After being completely dissolved, 3 ml of concentrated nitric acid was added to the aqueous solution to adjust the pH2 o 5 nanomaterials.

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Abstract

The invention provides a nano material. The nano material comprises V2O5 nano particles, an S element and a Zn element, wherein the S element and the Zn element are doped in crystal lattices of the V2O5 nano particles. According to the nano material provided by the invention, the p-type performance of the V2O5 nano particles is improved, the hole transport capability is improved, and when the nano material is used as a hole transport layer material of a quantum dot light-emitting diode, effective compounding of electrons and holes in a light-emitting layer can be promoted, the influence of exciton accumulation on the performance of a light-emitting device is reduced, and the display performance of the light-emitting device is improved.

Description

technical field [0001] The invention belongs to the technical field of nanomaterials, and in particular relates to a nanomaterial and a preparation method thereof, as well as a quantum dot light-emitting diode. Background technique [0002] Semiconductor quantum dots (QDs) have a quantum size effect. People can achieve the required specific wavelength of light by adjusting the size of the quantum dots. The luminescence wavelength tuning range of CdSe QDs can range from blue light to red light. In traditional inorganic electroluminescent devices, electrons and holes are injected from the cathode and anode, respectively, and then recombine in the light-emitting layer to form excitons to emit light. [0003] In recent years, the use of inorganic semiconductors as hole transport layers has become a relatively hot research topic. Transition metal oxides (NiO, MoO 3 、WO 3 , V 2 o 5 ), has attracted widespread attention due to its high work function and good environmental stab...

Claims

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Application Information

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IPC IPC(8): C01G31/02H01L51/50H01L51/54B82Y30/00
CPCC01G31/02B82Y30/00C01P2006/40H10K50/155H10K2102/00
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION