TGV deep hole filling method

A filling method and deep hole technology, which are applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems affecting chip signal transmission, not filling metal in time, affecting product quality, etc., and achieve enhanced adhesion strength and friction coefficient The effect of increasing, guaranteeing the effect

Active Publication Date: 2021-07-02
三叠纪(广东)科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Filling the deep holes by electroplating, the main difficulty is how to solve the gap-free filling. When the metal deposition rate is too fast, it is easy to appear gaps in the middle of the through holes that cannot be filled with metal in time, and the appearance of gaps will affect the chip. Signal transmission, etc. At the same time, how to make the copper layer covered on the surface as thin as possible, so as to reduce the cost of subsequent grinding and polishing
In addition, for TGV deep holes, that is, through glass holes with a large hole depth and diameter, in order to improve the uniformity and efficiency of cleaning and plating, ultrasonic waves can be applied, but ultrasonic waves can easily cause the seed layer to fall off and affect product quality.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The specific method of filling the glass through holes is:

[0034] The appropriate transparent glass substrate is selected as required, and 8 min was cleaned with acetone, alcohol and deionized water at a certain intensity ultrasound, and washed 24 minutes.

[0035] The cleaned glass substrate is dried, and the glass substrate is laser holes to obtain a plurality of glass vias depending on the desired pattern.

[0036] The glass substrate after the finished hole was cleaned under ultrasound conditions, ethanol, isopropyl alcohol, etc., washed and dried, and the glass through hole was corroded with a volume concentration of 5% -20%. The diameter is expanded to about 50 um, which can utilize a certain ultrasonic field assist in corrosion while corrosion, which is more uniform, avoiding cracking and other conditions.

[0037] The corrosive glass substrate was subjected to deeply holes, and the sputtered seed layer was Ti-Cu.

[0038] The sputtering test is activated in the di...

Embodiment 2

[0048] The operation step of this particular embodiment is in the same embodiment, and the difference is that when the fixture containing the glass substrate is removed from the infiltration tank, flush with deionized water, and then determine the insertion cathode groove after the multimeter is determined, determined to determine The plating tank is tightened, and then the current size and time are set, and finally open the cooling cycle system. The current size is set to 30 mA, the plating time is 55 h.

[0049] After the completion of plating, the glass substrate is removed, the test specimen with a thickness gauge, the glass substrate after plating than about 55um thick unplated, copper smaller thickness, the smaller the subsequent grinding and polishing margin to facilitate polishing.

[0050] Under the microscope, it was found that there was no translucent phenomenon, and the water was found.

[0051] The surface is shown in the surface of the glass transfer plate through ho...

Embodiment 3

[0053] The operation step of this particular embodiment is in the same embodiment, and the difference is that when the clamp containing the test piece is removed from the infiltration tank, it is rinsed with deionized water, and the diometric table is determined to be turned into the electro-plated cathode groove, determine The plating tank is tightened, and then the current size and time are set, and finally open the cooling cycle system. At this time, the current is set to 45 mA, the plating time is 50h.

[0054] After the electroplating is completed, the glass substrate is removed, and the thickness of the glass substrate is tested with a thickness gauge. After the electroplating glass substrate is 50 um, the thickness of the copper is smaller, and the subsequent grinding is small, which is convenient to polish polishing.

[0055] Under the microscope, it was found that there was no translucent phenomenon, and the water was found.

[0056] The surface is shown in the surface of...

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Abstract

The invention provides a TGV deep hole filling method. The TGV deep hole filling method comprises the following steps: A, cleaning a glass substrate; B, performing laser drilling on the glass substrate to obtain a plurality of glass through holes; C, corroding the glass substrate and the glass through hole by using a corrosive liquid; D, performing seed layer sputtering on the glass substrate and the glass through holes; G, soaking the glass substrate in a dilute sulfuric acid solution for activation; and F, electroplating. The glass substrate and the glass through hole are corroded, so that the surfaces of the glass substrate and the glass through hole become rough, the friction coefficient between the seed layer and the glass substrate and the friction coefficient between the seed layer and the glass through hole are increased, the adhesive strength of the seed layer can be enhanced, and in the subsequent activation and electroplating process, the seed layer can be prevented from falling off to a certain extent; therefore, the electroplating effect is ensured.

Description

Technical field [0001] The present invention relates to the field of three-dimensional sets of transfer plate technology, in particular a TGV deep hole filling method. Background technique [0002] The 3D package is the most mature integrated category of the industry, mainly by packaging the bare chip or separately packaged chip, which currently includes many different technologies, most of whom is existing single-chip package technology to the three-dimensional direction . The transfer plate (Interposer), is also referred to as an insert layer or an intermediate layer, is a new type of electronic substrate that enables the top die level of fine spacing I / O and bottom package level larger size large pitch I / O Interconnects between interconnections. A number of glass through-glass-VIa, TGVs, and glass through holes (TGV) are set through the substrate extending interconnect, and the interconnect length is reduced while reducing the interconnect length. , Weight and power consum...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
CPCH01L21/76873H01L21/76871H01L21/76877H01L21/76879
Inventor 郭欢张继华穆俊宏贾惟聪李勇蔡星周李文磊
Owner 三叠纪(广东)科技有限公司
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