Flexible silver selenide-based thermoelectric thin film and preparation method thereof

A technology of thermoelectric thin film and silver selenide, which is applied in the manufacture/processing of thermoelectric devices, and lead wire materials of thermoelectric device junctions, can solve the problems of high cost and poor thermoelectric performance of silver selenide thin film, and achieves low cost, Suitable for large-scale industrial production, high-purity effect

Active Publication Date: 2021-07-09
DONGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical problem to be solved by the present invention is to provide a flexible silver selenide-based thermoelectric thin film and its preparation method to overcome the defects of poor thermoelectric performance and high cost of silver selenide thin films in the prior art

Method used

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  • Flexible silver selenide-based thermoelectric thin film and preparation method thereof
  • Flexible silver selenide-based thermoelectric thin film and preparation method thereof
  • Flexible silver selenide-based thermoelectric thin film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0046] Ag 2 Preparation of Se flexible thermoelectric thin film:

[0047] 1) Weigh 0.5g PVP and dissolve it in 20mL DMF, then add 26.3mg selenium dioxide and 82.9mg silver nitrate while stirring, then add 10mL OA, stir magnetically at room temperature for 8-10min, then pour the mixed solution into a 50mL reaction kettle and heated to 120°C for 12 hours. After the reaction is complete, wait for the reaction kettle to cool down to room temperature, centrifuge the reacted solution at a speed of 8000r / min for 10min, remove the upper layer solution, wash the obtained black powder by centrifugation, and then add absolute ethanol and Acetone was centrifuged at 8000r / min for 5min, washed three times respectively, and finally the centrifuged powder was dried under vacuum at 60°C for 6h to obtain Ag 2 Se nanopowder. figure 1 The field emission scanning electron micrograph and transmission electron micrograph of the silver selenide nanopowder synthesized in this example are given, an...

Embodiment 2

[0051] Ag 1.9 Preparation of Se flexible thermoelectric thin film:

[0052] According to embodiment 1, change the silver nitrate consumption into 77.2mg in embodiment 1 step (1), all the other are identical with embodiment 1, obtain Ag 1.9 Se nanopowder, figure 2 The Ag synthesized in this example is given 1.9 Se nanopowder X-ray diffraction pattern, it can be seen from the figure: the synthesized Ag 1.9 The main phase of Se nanopowder is low-temperature silver selenide phase, which is consistent with its standard card (PDF#24-1041).

[0053] Ag 1.9 Preparation of Se nanopowder to obtain Ag 1.9 Se thermoelectric thin film, the specific process is the same as in Example 1.

[0054] The electrical conductivity of the film was measured by Loresta-GX high-precision four-probe instrument MCP-T700 to be 28.8 S / cm. The laboratory built a Seebeck coefficient test system based on the slope method, and recorded the potential difference ΔV generated by the film under different te...

Embodiment 3

[0056] Ag 2.1 Preparation of Se flexible thermoelectric thin film:

[0057] According to embodiment 1, change the silver nitrate consumption into 85.6mg in embodiment 1 step (1), all the other are identical with embodiment 1, obtain Ag 2.1 Se nanopowder. figure 2 The Ag synthesized in this example is given 2.1 Se nanopowder X-ray diffraction pattern, it can be seen from the figure: the synthesized Ag 2.1 The main phase of Se nanopowder is low-temperature silver selenide phase, which is consistent with its standard card (PDF#24-1041).

[0058] Ag 2.1 Preparation of Se nanopowder to obtain Ag 2.1 Se thermoelectric thin film, the specific process is the same as in Example 1.

[0059] The conductivity of the film was measured by Loresta-GX high-precision four-probe instrument MCP-T700 to be 48.3 S / cm. Using the self-built Seebeck coefficient test system based on the slope method in the laboratory, using Pall patch, infrared thermal imager (FOTRIC226) and nanovolt meter (Ke...

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Abstract

The invention relates to a flexible silver selenide-based thermoelectric thin film and a preparation method thereof. The method comprises the following steps: mixing a selenium source and a silver source with a surfactant, a solvent and a reducing agent, carrying out a reaction by using a chemical solution method, mixing the obtained silver selenide-based nano powder with the solvent, then carrying out ink-jet printing on a substrate to obtain a prefabricated film, carrying out vacuum drying, and directly carrying out heat treatment or putting the prefabricated film into a binder dispersion liquid to be soaked and then carrying out heat treatment. The method is simple and low in cost, and the prepared film has good thermoelectric performance, excellent mechanical performance and flexibility.

Description

technical field [0001] The invention belongs to the field of flexible thermoelectric materials and their preparation, in particular to a flexible silver selenide-based thermoelectric thin film and a preparation method thereof. Background technique [0002] With the increasing demand for energy in modern society, traditional energy such as fossil energy is gradually exhausted, and the development and utilization of green and efficient new clean energy has become the first choice for building an energy-saving society. [0003] Thermoelectric materials are functional materials that use the Seebeck effect and Peltier effect of semiconductor materials to realize the mutual conversion between thermal energy and electrical energy. Due to their small size, no noise, no pollution, long life, high reliability, thermoelectric materials, as environmentally friendly materials, have attracted widespread attention at home and abroad. [0004] The performance of thermoelectric materials ma...

Claims

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Application Information

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IPC IPC(8): H01L35/34H01L35/16
CPCH10N10/852H10N10/01
Inventor 刘艳张可忆张骐昊王连军周蓓莹郑琦江莞
Owner DONGHUA UNIV
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