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Photoelectric device and preparation method thereof

A technology for optoelectronic devices and electrode layers, which is applied in the fields of electrical solid-state devices, semiconductor/solid-state device manufacturing, photovoltaic power generation, etc., can solve the problems of low efficiency of perovskite photoelectric devices, alleviate fluorescence quenching phenomenon, simple preparation method, The effect of increasing the scope of application

Pending Publication Date: 2021-07-20
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, high-efficiency green PeLEDs use PEDOT:PSS as the hole transport layer. PEDOT:PSS not only has the problem of fluorescence quenching itself, but also has interface defects between the hole transport layer and the perovskite layer, which limits the perovskite. Fluorescent quantum efficiency of mineral thin films, which in turn leads to low efficiency of perovskite optoelectronic devices

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  • Photoelectric device and preparation method thereof
  • Photoelectric device and preparation method thereof
  • Photoelectric device and preparation method thereof

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preparation example Construction

[0065] According to another aspect of the present application, there is provided a method for preparing any one of the above photoelectric devices, comprising the steps: S1 providing a substrate with a first electrode layer, the first electrode layer being an anode layer 1 or a cathode layer 7; S2 at The material of the hole transport layer 2 , the material of the interface layer 3 and the material of the perovskite layer 4 are sequentially arranged on the first electrode layer from bottom to top; S3 is arranged on the perovskite layer 4 The material of the second electrode layer.

[0066] In some embodiments, the first electrode layer is the anode layer 1, and step S2 further includes the steps: S21 disposing the PEDOT:PSS solution on the surface of the anode layer 1 to form the hole transport layer 2; S22 placing the zwitterionic polymer solution It is disposed on the surface of the hole transport layer 2 to form an interface layer 3 ; S23 is to arrange a perovskite solution ...

Embodiment 1

[0070] A preparation of a photoelectric device, suitable for light-emitting diodes, comprising the steps of:

[0071] (a) Use acetone and ethanol solutions to ultrasonically clean the transparent conductive substrate ITO glass twice, dry it with nitrogen after treatment, transfer the ITO to an oxygen plasma cleaning machine, and perform oxygen plasma cleaning on it under vacuum conditions;

[0072] (b) Preparing the PEDOT:PSS layer of the hole transport layer 2 by spin coating, and performing thermal annealing at 150°C;

[0073] (c) dissolving the zwitterionic polymer P1 in trifluoroethanol (TFE) at a mass concentration of 0.2 mg / mL to form a solution, and then spin-coating the solution of the sulfonated zwitterionic polymer P1 onto the hole transport layer 2, Anneal at 100°C for 5 minutes to form an interface layer 3, wherein the chemical structural formula of the zwitterionic polymer P1 is:

[0074] (d) NH 2 CH=NH 2 Br(FABr) and PbBr 2 The precursor solution (FAPbBr 3...

Embodiment 2

[0082] The preparation method of the photoelectric device in this example is the same as in Example 1, except that the zwitterionic polymer P2 is used as the material of the interface layer 3, and the interface modification between the hole transport layer 2 and the perovskite layer 4 is carried out, and the zwitterionic The chemical structural formula of polymer P2 is:

[0083] Such as Figure 4 As shown, after the interface modification of the zwitterionic polymer P2, the PLQY of the perovskite layer 4 is increased from 37% to 60%, which proves that the zwitterionic polymer P2 interface layer 3 has a passivation effect on the bottom surface of the perovskite layer 4; Figure 5-6 As shown, the current density of the PeLED device does not change significantly after the interface modification of the zwitterionic polymer P2, and the external quantum efficiency of the PeLED device at a low current density is significantly improved (the highest EQE reaches 10.48%). In addition ...

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Abstract

The invention discloses a photoelectric device and a preparation method thereof, the photoelectric device comprises an anode layer, a cathode layer and a functional layer, wherein the functional layer is arranged between the anode layer and the cathode layer, the functional layer comprises a hole transport layer, an interface layer and a perovskite layer, the interface layer is arranged between the hole transport layer and the perovskite layer. The material of the interface layer is a zwitterionic polymer, and the zwitterionic polymer has a positive charge group and a negative charge group. Therefore, the interface defect is filled up by adding the interface layer between the hole transport layer and the perovskite layer, the fluorescence quenching phenomenon of the hole transport layer is relieved, and the fluorescence quantum efficiency of the perovskite layer is improved.

Description

technical field [0001] The invention relates to the technical field of photoelectric devices, in particular to a photoelectric device suitable for perovskite layers and a preparation method thereof. Background technique [0002] In recent years, organic-inorganic hybrid perovskites have shown great application potential in the field of optoelectronics due to their advantages such as simple preparation process, easy adjustment of luminous color, high color purity, and high photoelectric efficiency. However, the exciton binding energy of perovskite is low, and the thermal dissociation of excitons at room temperature leads to low radiative recombination of perovskite thin films, and the generated free carriers will be trapped by defect states, resulting in non-radiative recombination. Although at present, the fluorescence quantum efficiency (PLQY) of perovskite can be improved by reducing the grain size of perovskite, using quasi-two-dimensional perovskite structure or defect p...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48H01L51/50H01L51/54H01L51/56
CPCH10K71/12H10K85/10H10K30/10H10K50/00H10K71/00Y02E10/549
Inventor 柯友郭蔷
Owner NANJING TECH CORP LTD
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