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A kind of method for preparing single crystal nickel ferrite film

A nickel ferrite and single crystal technology is applied in the field of preparing single crystal nickel ferrite thin films, which can solve the problems of difficulty in preparing single crystal thin films, poor crystallinity, etc., and achieves simple operation, high repeatability and broad application prospects. Effect

Active Publication Date: 2022-07-01
LANZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although magnetron sputtering has the above advantages, molecular beam epitaxy is the first choice in the preparation of single crystal thin films, and it is very difficult to prepare single crystal thin films by magnetron sputtering
Related technologies The nickel ferrite film directly obtained by room temperature magnetron sputtering is generally very poor in crystallinity, even in an amorphous state. It is necessary to heat the substrate during the sputtering process or perform a heat treatment for a period of time after the sputtering is completed. It is possible to obtain single crystal nickel ferrite thin film

Method used

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  • A kind of method for preparing single crystal nickel ferrite film
  • A kind of method for preparing single crystal nickel ferrite film
  • A kind of method for preparing single crystal nickel ferrite film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0088] This example provides a single crystal nickel ferrite film prepared by room temperature magnetron sputtering, and the specific preparation method is as follows:

[0089] Step 1: Weigh ferrous sulfate heptahydrate, nickel sulfate hexahydrate and the same amount of ammonium oxalate according to the ratio of nickel ferrite, and dissolve them into deionized water at about 60 ° C to prepare a concentration of 0.5mol / L. solution; in the case of vigorous stirring, the ammonium oxalate solution was rapidly injected into the metal sulfate solution, that is, a yellow-green precipitate was formed; the precipitate was washed with suction filtration, and dried in an oven at 70 ° C for 4 hours to obtain nickel iron oxide oxalate precursor powder.

[0090] Step 2: Place the oxalate precursor powder of nickel ferrite in a box furnace, raise the temperature to 400°C at a heating rate of 2°C / min for pre-sintering, and take it out after holding for 5 hours; The material is fully ground, an...

Embodiment 2

[0095] The method for preparing the single crystal nickel ferrite thin film by room temperature magnetron sputtering in this example is different from Example 1 only in that the sputtering time in this example is 2248s, and the rest is the same as Example 1.

[0096] Compared with the single crystal nickel ferrite film obtained in Example 1, the single crystal nickel ferrite film obtained in Example 2 only has a change in the sputtering time, and the film thickness is 500 nm. attached Figures 7 to 10 They are the XRD pattern of the (110) plane, the XRD pattern of the (100) plane, the Φ scan pattern and the VSM pattern of the (100) plane obtained in Example 2, respectively. combine Figures 7 to 8 The test results show that the single crystal nickel ferrite film obtained in Example 2 still grows along the (110) crystal plane of the PMNPT single crystal substrate, and no impurity phase appears. from Figure 9 It can be seen from the Φ scanning diagram of the nickel ferrite t...

Embodiment 3

[0098] The difference between the method for preparing the single crystal nickel ferrite film by room temperature magnetron sputtering in this example and Example 1 is only that in step 4 of this example, the PMNPT single crystal substrate in the (100) direction is selected, and the rest are the same as Example 1 is the same.

[0099] attached Figures 11 to 14 They are the XRD pattern of the (100) plane, the XRD pattern of the (110) plane, the Φ scan pattern and the VSM pattern of the (110) plane obtained in Example 3, respectively. combine Figures 11 to 12 The test results show that the single crystal nickel ferrite film obtained in Example 3 grows along the (100) crystal plane of the PMNPT single crystal substrate, and no impurity phase appears. from Figure 13 It can be seen from the Φ scan of the Ni ferrite that the diffraction peaks of the nickel ferrite and PMNPT correspond one-to-one, and the in-plane epitaxial orientation is better, indicating that the epitaxial r...

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Abstract

The invention discloses a method for preparing a single crystal nickel ferrite film, which comprises the following steps: at room temperature, using a nickel ferrite target, magnetron sputtering on a single crystal substrate to prepare single crystal nickel iron Oxygen film. The invention can prepare the single crystal nickel ferrite thin film by the magnetron sputtering method at room temperature, without heating the substrate or subsequent heat treatment during the sputtering process, the operation is simple, the repeatability is high, and the application prospect is broad. .

Description

technical field [0001] The invention relates to the technical field of magnetic thin film materials, in particular to a method for preparing a single crystal nickel ferrite thin film. Background technique [0002] Nickel ferrite material is a kind of spinel soft ferrite. Because of its high resistivity, wide applicable frequency range above 100 MHz, low loss, good chemical stability and other advantages, it is widely used in electronic devices, Communication equipment, computers and other fields have been widely used. With the development of emerging fields and the development of technology, devices are constantly developing in the direction of miniaturization, chip type, and high performance, and the thin film of soft ferrite is also an inevitable trend. [0003] At present, nickel ferrite thin films can be mainly prepared by physical or chemical methods such as vacuum evaporation, ion plating, sputtering, and gas-phase reaction methods. Among them, magnetron sputtering, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/22C30B23/08C23C14/35C23C14/08C04B35/28C04B35/622
CPCC30B29/22C30B23/08C30B23/025C23C14/35C23C14/3414C23C14/085C04B35/2666C04B35/622C04B2235/3279C04B2235/6562C04B2235/6567
Inventor 王悦薛德胜
Owner LANZHOU UNIVERSITY