Device and method for measuring thermal resistance of nucleating layer of gallium nitride device based on picosecond laser

Abstract

The invention discloses a device and a method for measuring thermal resistance of a nucleating layer of a gallium nitride device based on picosecond laser. The device mainly comprises a heating and power measurement subsystem, a transient thermal response measurement subsystem, and a measurement guarantee subsystem, wherein the heating and power measurement subsystem comprises a picosecond laser heating module, an electrical heating module, and an electrical temperature detection module. The method adopts a structure function method to calculate the layered thermal resistance. The method comprises a picosecond laser heating step and an electrical heating step, wherein picosecond laser is used for heating a semiconductor device thin layer at first, then, an electrical acquisition mode is adopted for temperature measurement, and electrical heating and electrical detection modes are adopted for determining equivalent electrical heating power of laser heating. The problem that the thermal resistance of the nucleating layer of a gallium nitride HEMT device cannot be tested under the micrometer scale in the prior art is solved. A voltage and temperature calibration curve interpolation calculation mode is adopted, and the influence of parameter nonlinearity is avoided.

Description

technical field [0001] The invention relates to the field of semiconductor devices of electronic information technology, in particular to a device and method for measuring the thermal resistance of a nucleation layer of a gallium nitride HEMT device based on a picosecond laser. Background technique [0002] The third-generation electronic materials represented by gallium nitride have the characteristics of large band gap, small dielectric constant, good thermal conductivity, and high melting point. The GaN devices produced have unique advantages, such as excellent noise Silicon has higher energy efficiency, high maximum current, high breakdown voltage, high oscillation frequency, etc. It is very suitable for making radiation-resistant, high-frequency, high-power and high-density integrated electronic devices, especially suitable for military, aerospace, radar and communication Applications such as high-power fields have developed rapidly in recent years. [0003] Since ther...

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Problems solved by technology

[0015] In the above-mentioned prior art, although the double-interface electrical method is relatively mature, it can measure the steady-state thermal resistance and transient thermal resistance of semiconductor devices well, but this method is limited by parameters such as circuits, and the transient switching is relatively slow. Only microsecond-level response can be achieved, and the thermal resistance of the device nucleation layer cannot be measured

The measurement advantage of time-domain heat reflection method is to use the optical path difference to control the measurement depth. The problems of time-domain heat reflection method are that the special equipment is expensive, the signal-to-noise ratio is low, and the optical path that can be changed is generally short, resulting in time domain The temperature response time range that can be detected by the thermal reflection method is narrow, and it is mainly used for the measurement of thermal characteristics of femtosecond and picosecond time scales. Measurement of characteristics

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