Multi-digital PCR chip with high dynamic range and preparation method thereof
A high dynamic range and multiple technology, applied in the field of molecular biology, can solve the problems of limited dynamic range of digital PCR chip detection and insufficient ability of digital PCR chip multiple detection, and achieve the effect of small size, simple operation and simple preparation
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[0059] The embodiment of the present invention also provides a method for preparing a high dynamic range multiple digital PCR chip, through the following steps:
[0060] (1) Prepare a clean 4-inch silicon wafer;
[0061] (2) adopting standard soft photolithography to make cavity layer 200 molds;
[0062] (3) The mold is spin-coated with a release agent, ventilated and dried;
[0063] (4) Prepare PDMS with A:B=5:1 and pour it on the cavity layer 200 mold, heat and solidify to form the cavity layer 200;
[0064] (5) Prepare PDMS with A:B=10:1 and pour it on the chamber layer 200, and form the support layer 300 after curing;
[0065] (6) The PDMS layer chip is demolded and punched with a puncher to form the inlet and outlet sample ports 228;
[0066] (7) Sealing the chip and the substrate after plasma treatment;
[0067] (8) Paste a layer of polypropylene film on the support layer 300 as the sealing layer 400 to seal the sample inlet and outlet 228 .
Embodiment
[0070] The multiple digital PCR chip with high dynamic range provided by the present invention is prepared through the following steps:
[0071] (1) Silicon wafer preparation: put the clean silicon wafer on a hot plate and bake at 200°C for 4-5 minutes.
[0072] (2) Mold making: Pour a coin-sized SU-8 3025 negative photoresist in the center of the silicon wafer, set the coating program of the homogenizer as follows: 500rpm, 10s; 1200rpm, 30s, the thickness of the photoresist by spin coating is 50 μm. Pre-baking: Bake at 95°C for 15 minutes, then slowly lower to room temperature. Exposure: Align the channel mask with the photoresist-coated silicon wafer, and use a single-sided photolithography machine for exposure, and the exposure time is 6s. Post-baking: bake at 65°C for 1min, bake at 95°C for 5min, and slowly cool down to room temperature. Coating photoresist for the second time: Pour a coin-sized SU-83025 negative photoresist in the center of the silicon wafer, set the c...
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