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Perovskite light-emitting diode and preparation method thereof

A technology of light-emitting diodes and perovskites, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as difficult to determine the dripping time of the anti-solvent step

Pending Publication Date: 2021-12-21
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The main purpose of the present invention is to provide a perovskite light-emitting diode and its preparation method, aiming to solve the technical problem that it is difficult to determine the dripping time of the anti-solvent step

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  • Perovskite light-emitting diode and preparation method thereof
  • Perovskite light-emitting diode and preparation method thereof
  • Perovskite light-emitting diode and preparation method thereof

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preparation example Construction

[0066] Figure 5 It is a schematic diagram of the preparation process of the perovskite light-emitting layer of the present invention. During the spin coating process, a 365nm ultraviolet lamp is placed above the spin coating apparatus. The temporal and spatial nucleation and crystallization kinetics of perovskite can be easily identified by observing the photoluminescence phenomenon of the spin-coated thin film under the excitation of ultraviolet light.

[0067] At the beginning of the spin-coating process, the liquid perovskite film contains a large amount of dimethyl sulfoxide (DMSO) solvent, which does not reach supersaturation and no photoluminescence occurs (steps 1 and 2). After evaporation and removal of excess solvent, the formation of supersaturation leads to nucleation and some degree of crystallization of the film at the edge of the substrate, at which point the onset of photoluminescence can be monitored (steps 3 and 4). It is defined as the critical time for the...

no. 1 example

[0092] Based on the first embodiment, the second embodiment of the preparation method of the perovskite light-emitting diode of the present invention is proposed. In this embodiment, the preparation process of the green light perovskite light-emitting diode is proposed as follows, which specifically includes:

[0093] (1) First use laser etching process to carry out pattern design on ITO substrate;

[0094] (2) Use deionized water, lye, isopropanol solution and ethanol solution to carry out ultrasonic cleaning on the ITO substrate layer respectively for 15-30min, then blow dry and put it in a drying box for drying;

[0095] (3) UV ozone pretreatment is carried out to the dried ITO glass substrate;

[0096] (4) PEDOT:PSS (4083) solution and ethanolamine solution are mixed by volume ratio to obtain hole layer precursor solution;

[0097] (5) Spin-coat the hole transport layer precursor solution at a speed of 3000-7000rpm for 30-100s on the ITO glass substrate treated in step (3),...

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Abstract

The invention discloses a perovskite light-emitting diode and a preparation method thereof. The perovskite light-emitting diode structurally comprises a substrate, an anode, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode in sequence from bottom to top, and the light-emitting layer is a perovskite light-emitting layer; and when the perovskite light-emitting layer is prepared, a perovskite precursor solution is spin-coated on the hole transport layer, critical time is determined by monitoring a photoluminescence phenomenon, anti-solvent introduction time is selected by referring to the critical time, an anti-solvent is introduced, and annealing treatment is carried out to obtain the perovskite light-emitting layer. By monitoring the phenomenon of fluorescence in photoluminescence, the dripping time of the introduced anti-solvent can be easily determined, and accurate control of the dripping time of the anti-solvent is realized.

Description

technical field [0001] The invention relates to the technical field of optoelectronic device preparation, in particular to a perovskite light-emitting diode and a preparation method thereof. Background technique [0002] Metal halide perovskite light-emitting diodes (PeLEDs) have attracted much attention due to their high color purity, tunable emission wavelength, high photoluminescence quantum efficiency, and low-cost solution-based preparation. Since the first report of room-temperature near-infrared metal halide PeLEDs in 2014, the maximum external quantum efficiency (EQE) of green, red and near-infrared PeLEDs has exceeded 20%, and its optoelectronic performance is comparable to organic light-emitting diodes and inorganic quantum dot light-emitting diode technologies. . The rapid rise of PeLEDs benefits from the basic understanding of perovskite formation mechanism and optoelectronic properties, as well as mature experience in the processing of perovskite optoelectronic...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/00H01L51/56
CPCH10K71/12H10K71/15H10K71/40H10K50/11H10K71/00
Inventor 李贵君罗忠明刘保星郑婷
Owner SHENZHEN UNIV