Non-oxidation process micron column array high-power VCSEL structure and preparation method thereof

Abstract

The invention relates to the technical field of lasers, and provides a preparation method of a non-oxidation process micron column array high-power VCSEL structure, which comprises the following steps: S1, manufacturing an epitaxial wafer; S2, preparing a SiO2 mask on the epitaxial wafer, and etching the SiO2 mask to obtain a base material with a plurality of micron columns; S3, continuing to grow a SiO2 mask on the surface of the base material to serve as a passivation protection layer of the base material of the micron column; S4, spin-coating BCB on the base material with the passivation protection layer, and carrying out BCB photoetching, developing and curing, so that the BCB is used as a filling material in a gap between the adjacent micron columns of the base material; and S5, preparing an electrode to complete the preparation of the VCSEL structure. The invention also provides a non-oxidation process micron column array high-power VCSEL structure. The micron-sized VCSEL scale current limiting capability is high, so that the VCSEL threshold value is extremely low, and the photoelectric conversion efficiency is improved; the non-oxidation process without the oxide layer effectively reduces the thermal resistance of the VCSEL and improves the output power.

Description

technical field [0001] The invention relates to the technical field of lasers, in particular to a high-power VCSEL structure of a non-oxidation process microcolumn array and a preparation method thereof. Background technique [0002] Compared with edge-emitting semiconductor lasers, vertical cavity surface-emitting lasers (VCSEL) have more advantages in terms of optical field mode, modulation rate, output power, and batch manufacturing. Therefore, the development of such devices has always been one of the important branches of semiconductor optoelectronic devices. one. In recent years, as VCSEL devices play an increasingly important role in consumer electronics, 3D sensing, virtual reality, laser lighting, laser weapons, laser guidance and other fields, these remarkable advantages make VCSEL a Ideal light source for optical storage and optical pumping. Whether it is VCSEL device design or growth and production, it has attracted more and more attention from relevant profess...

AI Technical Summary

Problems solved by technology

Due to many factors such as the high complexity of the existing oxidation process, poor stability, and difficulty in controlling the precision to the micron level, miniature VCSEL light sources have always been difficult to achieve

At the same time, due to the difference in thermal expansion coefficient between oxide and semiconductor, stress will be generated at the oxide hole, which reduces the reliability of VCSEL, especially for VCSEL with small aperture.

On the other hand, AlxOy and figure 2 The thermal conductivity of GaAs and AlAs is about 0.7W / mK, while the thermal conductivity of GaAs and AlAs is about 50W / mK. Poor thermal diffusion at the oxidation hole will also limit the power and modulation bandwidth of the laser diode

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