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Preparation method for obtaining core-shell structure nanowire based on water gas shift reaction and carbon thermal reduction reaction

A technology of conversion reaction and core-shell structure, applied in nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve the problems of uncontrollable oxide layer thickness, complex preparation process, harsh reaction conditions, etc., to achieve The thickness of the oxide layer is controllable, the preparation process is simple, and the cost is low

Pending Publication Date: 2021-12-31
HARBIN INST OF TECH
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to solve the technical problems of complex preparation process of core-shell structure nanowires, harsh raw materials and reaction conditions, low product purity, and uncontrollable oxide layer thickness, and provides a core-shell nanowire based on water-gas shift reaction and carbothermal reduction reaction. Preparation method of structured nanowire

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  • Preparation method for obtaining core-shell structure nanowire based on water gas shift reaction and carbon thermal reduction reaction
  • Preparation method for obtaining core-shell structure nanowire based on water gas shift reaction and carbon thermal reduction reaction
  • Preparation method for obtaining core-shell structure nanowire based on water gas shift reaction and carbon thermal reduction reaction

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specific Embodiment approach 1

[0025] Specific Embodiment 1: In this embodiment, a method for preparing nanowires with a core-shell structure based on water-gas shift reaction and carbothermal reduction reaction is carried out according to the following steps:

[0026] 1. Silica fume pretreatment:

[0027] Put the silicon powder into a high-temperature and high-humidity box, control the temperature of the high-temperature and high-humidity box to be 80-150°C, and the humidity to be 20%-98% R.H for heat preservation treatment, and then cool in the furnace to obtain humidity-oxidized silicon powder;

[0028] 2. Synthesis of SiC nanowires:

[0029] Put the silicon powder processed in step 1 into a graphite crucible, add a graphite cover, put it into the atmosphere sintering furnace, and vacuumize to control the vacuum degree to 0.1-1.0Pa; then fill the atmosphere sintering furnace with argon; then control The heating rate is 5-20°C / min, the temperature is raised to 500-900°C and kept for 0.5-1.0h, and then co...

specific Embodiment approach 2

[0030] Embodiment 2: This embodiment differs from Embodiment 1 in that: the heat preservation treatment time in Step 1 is 2 to 48 hours. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0031] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that in Step 1, the temperature of the high-temperature and high-humidity box is controlled to 150° C. and the humidity is 20% R.H to carry out heat preservation treatment for 4 hours. Others are the same as in the first or second embodiment.

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Abstract

The invention discloses a preparation method for obtaining a core-shell structure nanowire based on a water gas shift reaction and a carbon thermal reduction reaction, and relates to the field of preparation methods of core-shell structure nanowires. The invention aims to solve the technical problems of complex preparation process, harsh raw materials and reaction conditions, low product purity and uncontrollable oxide layer thickness of the conventional core-shell structure nanowire. The method comprises the following steps: carrying out humidity oxidation treatment on silicon powder in a high-temperature and high-humidity box; and synthesizing the core-shell structure SiC nanowire with graphite in an atmosphere sintering furnace. The core-shell structure nanowire prepared by the method has the advantages that the thickness of the oxide layer is controllable, and the interface is tightly combined at an atomic scale. The method is used for preparing the core-shell structure SiC nanowire.

Description

technical field [0001] The invention relates to the field of preparation methods of core-shell structure nanowires. Background technique [0002] Silicon carbide nanowire materials have the advantages of high aspect ratio, high current emission density and low threshold emission electric field, high strength, high stiffness, high thermal conductivity, low thermal expansion coefficient, etc., and are used in field emission displays, microwave power amplifier tubes and x Photoelectric devices such as ray source tubes, lightweight, high-strength and high-rigidity composite components, hydrogen storage, photocatalysts and sensors have broad application prospects. However, due to the very large specific surface area of ​​nanomaterials, defects are inevitably generated on the surface, and surface defects severely inhibit the field emission of silicon carbide, greatly reducing the field emission efficiency. Studies have shown that coating a layer of SiO on the surface of SiC nanow...

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Application Information

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IPC IPC(8): C01B32/963C01B32/97C01B32/984C01B33/12B82Y30/00B82Y40/00
CPCC01B32/963C01B32/97C01B32/984C01B33/12B82Y30/00B82Y40/00C01P2002/72C01P2004/04C01P2004/64C01P2004/80C01P2004/16Y02P20/10
Inventor 康鹏超赵旗旗孙兆群王平平辛玲姜龙涛武高辉
Owner HARBIN INST OF TECH