Photonic crystal infrared stealth material and preparation method thereof

A stealth material and photonic crystal technology, applied in camouflage paint, devices for coating liquid on the surface, special surfaces, etc., can solve the problems of limited material selection, high equipment cost, complicated operation process, etc., and achieve radiation heat dissipation , to avoid the effect of structural collapse

Pending Publication Date: 2022-01-04
AEROSPACE INST OF ADVANCED MATERIALS & PROCESSING TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Chinese patent application CN201610007338.9 proposes the use of magnetron sputtering to prepare Ge/ZnSe photonic crystal thin films to achieve infrared stealth in the target band. application restrictions
Chinese patent application CN202011125743.3 has invented a multi-band cloak based on photonic crystal film material, and its photonic crystal infrared cloaking layer (Te/CaF 2 ) is made by vacuum evaporation coating method, but this method can only prepare one-dimensional photonic crystals with thi

Method used

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  • Photonic crystal infrared stealth material and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0031] (1) Hydrophilic treatment of the base: first configure piranha solution, slowly add 98% concentrated sulfuric acid into 30% hydrogen peroxide dropwise under rapid stirring conditions, the volume ratio is 7:3; after the solution is uniformly dispersed, the cut 25 A ×25mm single crystal silicon wafer was treated in piranha solution at 60°C for 8 hours, rinsed with deionized water and absolute ethanol respectively, and finally dried with nitrogen gas for later use.

[0032] (2) Preparation of colloidal microsphere dispersion: take an appropriate amount of 2 μm silica colloidal microspheres (with particle size change ≤ 5%) and disperse them in absolute ethanol at a concentration of 0.4%, and ultrasonically treat them for 2 hours to obtain uniformly mixed colloidal microspheres. Silica colloidal microsphere dispersion.

[0033] (3) Colloidal self-assembly process: Take 0.5mL of silica colloidal microsphere dispersion and drop it on the surface of the silicon wafer after hydr...

Embodiment 2

[0037] (1) Hydrophilic treatment of the substrate: first configure piranha solution, slowly add 98% concentrated sulfuric acid to 30% hydrogen peroxide dropwise under rapid stirring conditions, the volume ratio is 7:3; after the solution is uniformly dispersed, the cut 25 The ×25mm monocrystalline silicon wafer was treated in piranha solution at 60°C for 8 hours, rinsed with deionized water and absolute ethanol respectively, and finally dried with nitrogen gas for later use.

[0038](2) Preparation of colloidal microsphere dispersion: take an appropriate amount of 4.5 μm silica colloidal microspheres (particle size change ≤ 5%) and disperse them in a mixed solution of dibromomethane and absolute ethanol (volume ratio 3:1), with a concentration of 0.2%, ultrasonic treatment for 2 hours to obtain a uniformly mixed dispersion of silica colloidal microspheres.

[0039] (3) Colloidal self-assembly process: vertically immerse the hydrophilically treated silicon wafer in 15mL colloid...

Embodiment 3

[0043] (1) Hydrophilic treatment of the substrate: first configure the piranha solution, and slowly add the concentrated sulfuric acid to 30% hydrogen peroxide under rapid stirring conditions, the volume ratio is 7:3; after the solution is evenly dispersed, the cut 25×25mm The glass slides were treated in piranha solution at 60°C for 8 hours, then rinsed with deionized water and absolute ethanol, and finally dried with nitrogen gas for later use.

[0044] (2) Preparation of colloidal microsphere dispersion: take an appropriate amount of 1.5 μm polystyrene colloidal microspheres (particle size change ≤ 5%) and disperse them in a mixed solution of deionized water and ethanol (volume ratio 2:1) at a concentration of 0.3 %, sonicate for 2 hours to obtain a homogeneously mixed dispersion of polystyrene colloidal microspheres.

[0045] (3) Colloidal self-assembly process: take 0.2mL of polystyrene colloidal microsphere dispersion and drop it on the surface of the glass sheet after h...

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Abstract

The invention discloses a photonic crystal infrared stealth material and a preparation method thereof, and belongs to the technical field of stealth materials. The photonic crystal infrared stealth material is prepared through the steps of substrate hydrophilic treatment, colloidal microsphere dispersion liquid preparation, colloidal self-assembly process, heat treatment process and the like. According to the photonic crystal infrared stealth material and the preparation method thereof, the infrared stealth performance of the material is slightly influenced by the angle of incident light, the stealth effect of infrared detection wavebands (3-5 microns and 8-12 microns) and the radiation heat dissipation performance of other wavebands can be achieved by adjusting the substance types and sizes of assembly elements, and meanwhile radar stealth of the waveband of 2-18 GHz is compatible.

Description

technical field [0001] The invention belongs to the technical field of stealth materials, and in particular relates to a photonic crystal infrared stealth material and a preparation method thereof. Background technique [0002] Infrared stealth materials change their own infrared radiation characteristics by reducing their emissivity in the infrared band, making it difficult for infrared detection equipment to detect and achieve the purpose of stealth. Traditional infrared stealth materials are mainly composed of binders and low-emissivity fillers. Among them, the binders mainly include silicone, acrylic, epoxy and other resins, and the low-emission fillers include metal aluminum powder, indium tin oxide, zinc aluminum oxide, etc. However, while these infrared stealth coatings reduce surface infrared radiation, they also increase the reflection of visible light and microwaves, which is not conducive to radar stealth. In addition, traditional infrared stealth coatings still ...

Claims

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Application Information

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IPC IPC(8): B05D5/06B05D7/24B05D3/00C09D1/00C09D5/30
CPCB05D5/061B05D7/24B05D3/002B05D3/007C09D1/00C09D5/30
Inventor 王鹏李文静张晚林张恩爽刘圆圆赵英民张昊
Owner AEROSPACE INST OF ADVANCED MATERIALS & PROCESSING TECH
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