W-Cu composite powder with high thermal conductivity and low thermal expansion coefficient and preparation method thereof

A low thermal expansion coefficient, composite powder technology, applied in the direction of semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve the problem of W and Cu immiscible wettability, unfavorable material physical properties, and difficult mass production To achieve the effect of improving density and physical properties, less agglomeration, and reducing thermal expansion coefficient

Pending Publication Date: 2022-01-11
安徽亿恒新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, due to the characteristics of W and Cu immiscibility and poor wettability, W-Cu composites produced by traditional preparation methods (such as infiltration, high-temperature liquid phase sintering) often have low density and uneven structure.
Although mechanical alloying can pr

Method used

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  • W-Cu composite powder with high thermal conductivity and low thermal expansion coefficient and preparation method thereof
  • W-Cu composite powder with high thermal conductivity and low thermal expansion coefficient and preparation method thereof
  • W-Cu composite powder with high thermal conductivity and low thermal expansion coefficient and preparation method thereof

Examples

Experimental program
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Example Embodiment

[0026] Example 1

[0027] Preparation of high thermal conductivity and low thermal expansion coefficient W-CU composite powder is as follows:

[0028] Step 1: Preparation of the front drive

[0029] Pasteneate (AMT, ALADDIN, purity ≥99.95%) and copper (Cu (NO) 3 ) 2 · 3h 2 O, ALADDIN, purity ≥ 99.5%) Dissolve in deionized water, heating and stirring to obtain a mixed solution, and the like is transparent to oxalic acid (C 2 Hide 2 O 4 · 2h 2 O, analyze pure), the precipitate obtained by stirring the mixed solution to dry the W-CU precursor.

[0030] Among them, the amount of copper-nitrate and oxalic acid is 70.41%, 39%, respectively.

[0031] Step 2: Hydrogen reduction

[0032] The block front-shaped body obtained in step 1 is fully grinding the fine powder in the mortar, and the burning boat placed in a fine powder is placed in hydrogen (hydrogen gas purity ≥99.999%) to reduce the furnace for three-step reduction: first rose the temperature to 400 ° C, for 30 min, so that the re...

Example Embodiment

[0039] Example 2

[0040] High thermal conductivity, a low thermal expansion coefficient of the chemical preparation of W-Cu composite powders is as follows:

[0041] Step 1: Preparation of the front drive

[0042] Pasteneate (AMT, ALADDIN, purity ≥99.95%) and copper (Cu (NO) 3 ) 2 · 3h 2 O, ALADDIN, purity ≥ 99.5%) Dissolve in deionized water, heating and stirring to obtain a mixed solution, and the like is transparent to oxalic acid (C 2 Hide 2 O 4 · 2h 2 O, analyze pure), the precipitate obtained by stirring the mixed solution to dry the W-CU precursor.

[0043] Wherein the amount of added copper nitrate and oxalic acid were 31.29% by mass of ammonium metatungstate, 38%.

[0044] Step 2: Hydrogen reduction

[0045] The finely ground bulk precursor obtained in Step 1 in a mortar to a fine powder, the powder has a burning boat containing into hydrogen (hydrogen purity ≥99.999%) reduction furnace for reduction of three steps: First, the temperature was raised to 380 ℃, incubated 2...

Example Embodiment

[0049] Example 3

[0050] Preparation of high thermal conductivity and low thermal expansion coefficient W-CU composite powder is as follows:

[0051] Step 1: Preparation of the front drive

[0052] Pasteneate (AMT, ALADDIN, purity ≥99.95%) and copper (Cu (NO) 3 ) 2 · 3h 2 O, ALADDIN, purity ≥ 99.5%) Dissolve in deionized water, heating and stirring to obtain a mixed solution, and the like is transparent to oxalic acid (C 2 Hide 2 O 4 · 2h 2 O, analyze pure), the precipitate obtained by stirring the mixed solution to dry the W-CU precursor.

[0053] Wherein the amount of copper nitrate and oxalic acid were added 120.70% vinylidene by mass of ammonium tungsten, 40%.

[0054] Step 2: Hydrogen reduction

[0055] The finely ground bulk precursor obtained in Step 1 in a mortar to a fine powder, the powder has a burning boat containing into hydrogen (hydrogen purity ≥99.999%) reduction furnace for reduction of three steps: First, the temperature was raised to 420 ℃, incubated 40min, the...

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Abstract

The invention discloses W-Cu composite powder with high thermal conductivity and low thermal expansion coefficient. The thermal conductivity is 200-235W/(m.K), and the thermal expansion coefficient is (5.6-9.3) * 10<-6>/K. The invention further discloses a preparation method of the W-Cu composite powder with high thermal conductivity and low thermal expansion coefficient. The preparation method comprises the following steps of: preparing a W-Cu precursor by adopting a wet chemical method; carrying out pyrolysis reduction on the W-Cu precursor in a hydrogen environment; and carrying out compression molding on the reduced W-Cu composite powder, then heating to 1100-1300 DEG C in a hydrogen atmosphere, carrying out heat preservation for 100-140 minutes, and cooling to obtain the W-Cu composite powder. According to the preparation method, the W-Cu composite precursor is prepared by adopting the wet chemical method, the W-Cu composite powder with high sintering activity is obtained through different reduction process combinations, and then the W-Cu composite powder with high density, high thermal conductivity, low thermal expansion coefficient and uniform tissue distribution is prepared through subsequent liquid phase sintering.

Description

technical field [0001] The invention relates to the technical field of integrated circuit packaging materials, in particular to a chemical preparation method of W-Cu composite powder with high thermal conductivity and low thermal expansion coefficient and its composite material. Background technique [0002] In integrated circuits, electronic packaging materials play the role of chip protection, chip support, chip heat dissipation, chip insulation and chip and external circuit connection, which requires packaging materials to have excellent electrical conductivity, thermal conductivity, good chemical inertia, low thermal expansion coefficient and high hardness and so on. With the rapid development of microelectronics technology, integrated circuits are gradually becoming highly integrated and miniaturized, which means that packaging materials need to release heat in a timely manner, and have a low thermal expansion coefficient to ensure compatibility with Si, Semiconductor ...

Claims

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Application Information

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IPC IPC(8): B22F9/22B22F9/30B22F3/02B22F3/10C22C1/04C22C27/04H01L23/29H01L23/373
CPCB22F9/22B22F9/30B22F3/02B22F3/1035C22C27/04C22C1/045H01L23/29H01L23/3736
Inventor 罗来马丁希鹏吴玉程昝祥朱晓勇
Owner 安徽亿恒新材料科技有限公司
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