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Inorganic filler high-flux hydroxylation method and device based on low-temperature plasma

A low-temperature plasma and plasma technology, applied in inorganic pigment processing, chemical instruments and methods, fibrous fillers, etc., can solve problems such as bulky supporting devices, achieve good compatibility, low processing cost, and improve thermal conductivity.

Pending Publication Date: 2022-01-28
CHONGQING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, currently commonly used low-temperature plasma generators often require bulky supporting devices, such as vacuum chambers or high-temperature heating equipment, so they have certain limitations in use

Method used

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  • Inorganic filler high-flux hydroxylation method and device based on low-temperature plasma
  • Inorganic filler high-flux hydroxylation method and device based on low-temperature plasma
  • Inorganic filler high-flux hydroxylation method and device based on low-temperature plasma

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] see Figure 1 to Figure 6 , a low-temperature plasma-based high-throughput hydroxylation method for inorganic fillers, comprising the following steps:

[0046] 1) Spread the boron nitride powder 3 to be processed on the conveyor belt 1 . The material of the conveyor belt 1 includes polyimide.

[0047] The average particle diameter of the boron nitride powder 3 is 1 μm˜5 μm.

[0048] 2) The roller-to-roller device is used to drive the conveyor belt 1 to move, so that the flat boron nitride powder 3 passes through the plasma region.

[0049] The roll-to-roll device includes several rollers for driving the polyimide conveyor belt 1 to move.

[0050] 3) At the processing temperature T, the controller sends a control signal to the power supply, so that the power supply discharges to the plasma generator 2 located above the polyimide conveyor belt 1 .

[0051]The power supply transmits alternating current to the plasma generator 2 .

[0052] 4) After the plasma generator...

Embodiment 2

[0060] See Example 1 for the high-throughput hydroxylation method of inorganic fillers based on low-temperature plasma. The device used in this method includes a polyimide conveyor belt 1, a roll-to-roll device, a power supply, a plasma generator 2, a controller, and a temperature measurement device and discharge power measuring device.

[0061] The conveyor belt 1 is used for containing and conveying boron nitride.

[0062] The boron nitride of the counter-roller device drives the conveyor belt 1 to move, so that the boron nitride moves to the plasma region.

[0063] The power supply supplies power to the plasma generator 2 .

[0064] The plasma generator 2 generates atmospheric-pressure low-temperature plasma in the plasma generation area. The atmospheric-pressure low-temperature plasma treats the boron nitride powder 3 located in the plasma region to obtain boron nitride grafted with -OH groups (hydroxyl groups).

[0065] The temperature measuring device monitors the tem...

Embodiment 3

[0070] see Figure 1 to Figure 3 , a low-temperature plasma-based high-throughput hydroxylation method for inorganic fillers, comprising the following steps:

[0071] 1) Spread the aluminum nitride powder 3 to be processed on the conveyor belt 1 . The material of the conveyor belt 1 includes polyimide.

[0072] The average particle size of the aluminum nitride powder 3 is 1 μm˜5 μm.

[0073] 2) Using a roll-to-roll device to drive the conveyor belt 1 to move, so that the flat aluminum nitride powder 3 moves to the plasma area.

[0074] The roll-to-roll device includes several rollers for driving the polyimide conveyor belt 1 to move.

[0075] 3) At the processing temperature T, the controller sends a control signal to the power supply, so that the power supply discharges to the plasma generator 2 located above the polyimide conveyor belt 1 .

[0076] The power supply transmits alternating current to the plasma generator 2 .

[0077] 4) After the plasma generator 2 receive...

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Abstract

The invention discloses an inorganic filler high-flux hydroxylation method and a device based on low-temperature plasmas, and the method comprises the following steps: 1) driving a conveyor belt (1) to move by using a roller-to-roller device, and enabling a to-be-treated tiled filler (3) to move to a low-temperature plasma area; 2) enabling a power source to discharge to a low-temperature plasma generator (2) located above the polyimide conveying belt (1); 3) after the plasma generator (2) is electrified, generating atmospheric pressure low-temperature plasma in a low-temperature plasma area; and 4) treating the to-be-treated filler (3) in the plasma area by the atmospheric pressure low-temperature plasma to obtain the filler grafted with the-OH group (hydroxyl). The device comprises the conveyor belt (1), the roller-to-roller device, the power supply, the plasma generator (2), a controller, a temperature measuring device and a discharge power measuring device, the inorganic filler subjected to low-temperature plasma high-flux treatment is good in quality and excellent in grafting effect, no solvent is involved in the whole process, and no toxic by-product is generated.

Description

technical field [0001] The invention relates to the field of material processing, in particular to a low-temperature plasma-based high-throughput hydroxylation method and device for inorganic fillers. Background technique [0002] Inorganic fillers such as boron nitride, aluminum nitride, and graphene have ultra-high thermal conductivity and a wide band gap, so they are excellent thermal conductivity and electrical insulation materials. In actual use, these inorganic fillers also have high chemical stability, heat resistance, oxidation resistance, and low dielectric constant and dielectric loss, so inorganic fillers such as boron nitride, aluminum nitride, and graphene Polymer matrix composites as fillers have broad application prospects in electronic packaging. [0003] The temperature of high-temperature plasma is too high, which makes it difficult to process materials (such as arc discharge plasma and spark discharge plasma, whose macroscopic temperature exceeds 2000 ° C...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09C1/46C09C1/40C09C3/06
CPCC09C1/46C09C1/40C09C3/06
Inventor 余亮董守龙姚陈果
Owner CHONGQING UNIV
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