Buried heterojunction device and preparation method thereof

Abstract

The invention discloses a buried heterojunction device and a preparation method thereof. The method comprises the following steps: sequentially growing a first doping layer, an active layer, a second doping layer and a first silicon dioxide layer on a substrate; manufacturing a filling window on the first silicon dioxide layer; corroding the window to the upper surface of the first doping layer, forming a groove and filling a buried material; forming an auxiliary ridge through corrosion; growing a second silicon dioxide layer on the first doping layer and the auxiliary ridge; preparing a light-emitting ridge on the second silicon dioxide layer through corrosion; respectively manufacturing and depositing metal windows on the light-emitting ridge and the auxiliary ridge; growing ohmic contact in the window and manufacturing a first front metal electrode; after treatment, manufacturing a back metal electrode at the bottom of the substrate, and after cleavage treatment, obtaining a chip body; manufacturing a second front metal electrode on the surface of the first heat sink material; inversely sintering the chip body on the first heat sink material; and sintering the first heat sink material with the chip body onto the second heat sink material to obtain the buried heterojunction device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a buried heterojunction device and a preparation method thereof. Background technique [0002] Terahertz quantum cascade lasers (THz QCLs) are semiconductor unipolar devices that emit coherent radiation. The entire lasing process occurs between subbands, avoiding the participation of complex valence bands and preventing the Auger recombination process. The active region is grown by MBE, a superlattice quantum well is formed by two alternately grown ultra-thin semiconductor materials, and separate conduction band sublevels are formed in the quantum well, and the emission frequency is adjusted by changing the composition and thickness of the material . Therefore, it has broad application prospects in drug and gas detection, terahertz imaging, communication, biomedicine, precision spectral analysis, and near-field microscopic imaging. [0003] For semiconductor lasers, the ...

AI Technical Summary

Problems solved by technology

Traditionally, no matter whether the terahertz quantum cascade laser adopts a semi-insulating surface plasmon waveguide structure or a double-sided metal waveguide structure, it is packaged by positive welding. There is a substrate thickness of hundreds of microns between the light-emitting ridge and the heat sink. The vertical cooling capacity of the

Even if flip soldering is done, silicon dioxide is used as the insulating layer, and the lateral filling is not considered. This will not only result in poor heat dissipation, but also cause the soft solder to generate huge stress on the light-emitting ridges. It is hundreds of degrees under high temperature pressure welding and low temperature testing. Under the temperature difference, it is easy to cause cracking and failure of the device, so that the yield is very low, which is not suitable for application development

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