Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Twin-monomer composition and dielectric film thereof

A composition and monomer technology, applied in prepreg, dielectric film of Df and Dk, preparation of insulating film, application in multilayer printed circuit board and semiconductor device, dielectric film field, to achieve few layer defects , Uniform layer thickness, less layer inhomogeneity effect

Pending Publication Date: 2022-02-08
BASF AG
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] Additionally, previous systems used well-defined spiro compounds that could not be altered or were made from tetraphenoxy derivatives, which required the addition of a formaldehyde source for polymerization

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Twin-monomer composition and dielectric film thereof
  • Twin-monomer composition and dielectric film thereof
  • Twin-monomer composition and dielectric film thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0220] Measurement and evaluation of dielectric constant and loss tangent

[0221] The film thickness was measured with a micrometer (product of Mitutoyo, Japan, 0.001-5 mm). Dielectric measurements were done using a 10GHz Split Post Dielectric Resonator (SPDR) (product of QWED, Poland) and a vector network analyzer E5071C (product of keysight Technologies).

[0222] The SPDR was run in TE01δ mode, which confines the electric field component to the azimuthal direction of the membrane sample (F. Chen et al., Journal of Electromagnetic Analysis and Applications 4 (2012), 358–361). The resonance mode is insensitive to the air gap perpendicular to the membrane sample.

[0223] Dielectric constant D k Determined by the resonance frequency shift due to sample insertion. The typical uncertainty of the dielectric constant is better than ±1%, as the thickness measurement accuracy of the test sample is ±0.7% or better.

[0224] Loss tangent value D f The Q factors of the cavity and...

Embodiment A1

[0225] Example A1: Synthesis of tetra-(4-methoxybenzyloxy)silane

[0226] Under nitrogen, 108 g of 4-methoxybenzyl alcohol were dissolved in 500 ml of toluene in a 1 liter three-necked flask equipped with a mechanical stirrer. 82.1 g of 1-methylimidazole were added and 42.5 g of silicon tetrachloride were added slowly over 1 hour. The exothermic reaction was kept below 50 °C. Then, the mixture was heated at 100° C. for 5 hours with continuous stirring.

[0227] Stirring was stopped and the mixture was cooled to room temperature. The imidazolium salt formed was filtered and the solution was concentrated at 100° C. and 5 mbar. 112 g of product are obtained. 1 H-NMR (CD 2 Cl 2 ): 3.76ppm (s, 12H), 4.70ppm (s, 8H), 6.83ppm (d, 8H), 7.20ppm (d, 8H).

Embodiment A2

[0228] Embodiment A2: the synthesis of two-(4-methoxybenzyloxy)dimethylsilane

[0229] Under nitrogen, 69.1 g of 4-methoxybenzyl alcohol were dissolved in 400 ml of toluene in a 1-liter three-necked flask equipped with a mechanical stirrer. 41 g of 1-methylimidazole were added and 32.3 g of dichlorodimethylsilane were added slowly within 1 hour at 40°C. During the addition, the temperature rose to 50°C. The mixture was then heated to 60°C with continuous stirring for 0.5 hours, then at 85°C for an additional 2 hours.

[0230] Stirring was stopped and the mixture was cooled to room temperature. The imidazolium salt formed was filtered and the solution was concentrated at 90° C. and 10 mbar. 78 g of product are obtained. 1 H-NMR (CD 2 Cl 2 ): 0.16ppm (s, 6H), 3.77ppm (s, 6H), 4.66ppm (s, 4H), 6.85ppm (d, 4H), 7.22ppm (d, 4H). Example B1: Polymerization and Membrane Formation Using Silica and Acid Evaporation

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

A composition comprising a monomer of the general formula (M1) wherein M is a metal or semimetal of main group 3 or 4 of the periodic table; XM1, XM2 are each O; RM1, RM2 are the same or different and are each an -CRaRb-Ar-O-Rc; Ar is a C6 to C30 carbocyclic ring system; Ra, Rb are the same or different and are each H or C1 to C6 alkyl; Rc is C1-C22-alkyl, benzyl or phenyl; q according to the valency and charge of M is 0 or 1; XM3, XM4 are the same or different and are each O, C6 to C10 aryl, or -CH2-; RM3, RM4 are the same or different and are each RM1, H, C1-C22 alkyl, or a polymer selected from a polyalkylene, a polysiloxane, or a polyether.

Description

[0001] Background of the invention [0002] The present invention relates to a composition comprising monomers comprising inorganic or organometallic and organic moieties having aromatic or heteroaromatic structural units (twin monomers). In addition, the present invention relates to the application of the composition in the preparation of insulating films, prepregs, multilayer printed circuit boards and semiconductor devices. [0003] In recent years, miniaturization and high functionality of electronic instruments have progressed. In a multilayer printed wiring board, the buildup is made into multiple layers, and microfabrication and high densification of wiring are required. [0004] Composite materials, that is, polymer-based composites formed from at least one organic polymer phase and at least one inorganic or organometallic phase (such as an inorganic metal oxide phase), often have interesting physical properties, such as mechanical, electrical and And / or optical proper...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07F7/04B32B15/08C08K3/22C08K9/06C08L43/04H01L23/14H05K1/03
CPCC07F7/04H05K1/0326H01L23/145C08K3/36C09D165/00C08G61/02C08G2261/3424C08G2261/65C08G2261/1424C08G2261/76C08L33/12C08L25/06C08G77/80C08J5/18C08G61/10H05K1/0298
Inventor S·奇霍尼J-P·B·林德纳D·勒夫勒Y·伯克I·亨尼格L·B·亨德森B·格克R·德奥利维拉V·博伊科F·皮龙
Owner BASF AG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com