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High-entropy perovskite oxide thin film material and preparation method thereof

A technology of perovskite oxide and thin film materials, applied in chemical instruments and methods, magnetic materials, polycrystalline material growth and other directions, can solve the problems of limited modification effect, excessive doping ratio, deterioration of material properties, etc. Effects of novel physical features

Pending Publication Date: 2022-03-01
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the existing means of regulating perovskite oxide thin film materials, strain regulation usually requires a specific substrate to provide appropriate stress. Therefore, different perovskite oxide thin film materials need different substrates, and with the thickness of the film Changing the strain state will also change accordingly; changing the film growth atmosphere may require different types of background gases or even mixed gases for different materials, and changing the growth atmosphere may also change the epitaxial growth quality of the film at the same time, resulting in surface roughness or crystallinity deterioration ; The method of element doping modification is simple to operate, but if the doping ratio is too large, it will easily lead to the precipitation of the second phase, which will deteriorate the performance of the material.
Overall, the modification effect of the above methods is limited

Method used

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  • High-entropy perovskite oxide thin film material and preparation method thereof
  • High-entropy perovskite oxide thin film material and preparation method thereof
  • High-entropy perovskite oxide thin film material and preparation method thereof

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Experimental program
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Embodiment 1

[0031] The preparation method of the present embodiment is as follows:

[0032] 1) La with a purity of 99.9% 2 o 3 , NiO, MnO 2 , Fe 2 o 3 、Co 3 o 4 and Cr 2 o 3 The powder is mixed at a molar ratio of 15:6:6:3:2:3 and then sintered to obtain La(Cr 0.2 mn 0.2 Fe 0.2 co 0.2 Ni 0.2 )O 3 target.

[0033] 2) La(Cr 0.2 mn 0.2 Fe 0.2 co 0.2 Ni 0.2 )O 3 The target is placed at the target position in the PLD system, and the SrTiO 3 The substrate is placed in the position of the substrate in the system;

[0034] 3) Vacuum the PLD chamber to 1×10^ -4 Pa, and the substrate temperature was raised to 625°C, and the dynamic oxygen pressure was adjusted to 100mTorr.

[0035] 4) Turn on the laser and set the laser energy to 0.82J / cm 2 , the pulse frequency is 5Hz, and the number of pulses is 3100.

[0036] 5) Open the laser baffle and heater baffle to prepare La(Cr 0.2 mn 0.2 Fe 0.2 co 0.2 Ni 0.2 )O 3 High-entropy perovskite oxide films.

[0037] 6) Cool to roo...

Embodiment 2

[0043] This example is used to illustrate the antiferromagnetic La(Cr 0.2 mn 0.2 Fe 0.2 co 0.2 Ni 0.2 )O 3 High-entropy perovskite oxide films with La 0.67 Sr 0.33 MnO 3 The heterojunction formed by the substrate has obvious exchange bias effect.

[0044] According to the method of embodiment 1, the difference is: in SrTiO 3 La 0.67 Sr 0.33 MnO 3 film, followed by La 0.67 Sr 0.33 MnO 3 La(Cr 0.2 mn 0.2 Fe 0.2 co 0.2 Ni 0.2 )O 3 High-entropy perovskite oxide thin films to obtain La 0.67 Sr 0.33 MnO 3 / La(Cr 0.2 mn 0.2 Fe 0.2 co 0.2 Ni 0.2 )O 3 heterojunction.

[0045] The La(Cr prepared in this embodiment 0.2 mn 0.2 Fe 0.2 co 0.2 Ni 0.2 )O 3 with La 0.67 Sr 0.33 MnO 3 The heterojunction exhibits a pronounced exchange bias effect. From Figure 5 Part (c) shows that after cooling to 10K with a 3T magnetic field, La(Cr 0.2 mn 0.2 Fe 0.2 co 0.2 Ni 0.2 )O 3 with La 0.67 Sr 0.33 MnO 3 In addition to the exchange bias effect in the same...

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Abstract

The invention belongs to the technical field of material preparation, and particularly relates to a high-entropy perovskite oxide thin film material and a preparation method thereof. According to the preparation method, a novel magnetic material La (Cr < 0.2 > Mn < 0.2 > Fe < 0.2 > Co < 0.2 > Ni < 0.2 >) O < 3 > (L5BO) is firstly prepared, and more abundant and novel physical characteristics are potentially achieved by means of the coupling effect among sequence parameters; and then, growing an L5BO thin film on the SrTiO3 (STO) single crystal substrate by using the L5BO high-entropy metal oxide ceramic target material and by means of a pulsed laser deposition technology. The monocrystal high-entropy perovskite type oxide epitaxial film with good quality is obtained. Displacement regulation and control of the hysteresis loop in the vertical direction are achieved in the single-crystal pure-phase oxide epitaxial thin film for the first time, and the method has huge application potential in magnetic devices.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and in particular relates to a high-entropy perovskite oxide film material and a preparation method thereof. Background technique [0002] Perovskite oxide thin film materials have long attracted the attention of a large number of researchers due to their rich physical connotations and wide application scenarios. A series of devices such as spin valves and magnetic tunnel junctions based on perovskite oxide thin film materials constitute the basis of many modern electronic devices. The application of materials and the iterative update of electronic devices are of great significance. The common means to adjust the properties of perovskite oxide thin film materials mainly include strain adjustment, changing the film growth atmosphere, and element doping. Among them, the strain control is to apply epitaxial stress to the epitaxially grown perovskite oxide film by selecting a suitable ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/28C23C14/08C30B29/22C30B28/02C23C14/54H01F1/03
CPCC23C14/28C23C14/08C30B29/22C30B28/02C23C14/54H01F1/0313
Inventor 陈祖煌李晋阳汪海林张金萍
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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