Process method for processing ZrAlO film system on cavity surface of semiconductor chip

Abstract

The invention relates to the field of semiconductor lasers, in particular to a process method for processing a ZrAlO film system on a cavity surface of a semiconductor chip. The process method comprises the following steps: carrying out Bar strip cleavage and strip clamping on a product to be coated, quickly putting the product into evaporation coating equipment, vacuumizing, baking the product in a vacuum chamber, carrying out ion source pre-cleaning treatment on a cavity surface of the baked product, coating a ZrAlO / SiO2 film system antireflection film, carrying out ion source pre-cleaning treatment on a backlight surface of the product, and carrying out vacuum coating on the product to be coated with a ZrAlO / SiO2 film system antireflection film. Carrying out multi-layer high-reflection film system coating on the backlight surface of the product; wherein in the ZrO2 manufacturing process, 5-8% of Al is doped to prepare ZrAlO. The ZrAlO film layer structure has a stable tetragonal phase structure and has a stable refractive index under different film thicknesses and different temperatures, so that the failure of the laser caused by the defects of the film layer is avoided; meanwhile, compared with a conventional ZrO2 / SiO2 film system, ZrAlO effectively improves the stress between the film layers, and the situation that due to the fact that the stress of the film layers is too large at high temperature, the quality of the film layers becomes poor, and the performance of the laser is affected is avoided.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to a process method for processing a ZrAlO film system on the cavity surface of a semiconductor chip. Background technique [0002] In the manufacturing process of semiconductor lasers, especially for DFB (Distributed Feedback Laser) lasers, the last step of the process needs to coat the cavity surface of the laser to realize the protection of the cavity surface, and by changing the emissivity of the cavity surface, it is realized for The gain effect of the laser output and the monitoring of the backlight; in addition, the quality of the cavity film layer also directly affects the service life and reliability of the laser. How to design a more reasonable film system and achieve excellent film quality has always been an industry practitioner At the same time, because the current high-speed chip solutions are generally made of Al-containing substrates (ie InGaAlAs) to improve the h...

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Problems solved by technology

[0002] In the manufacturing process of semiconductor lasers, especially for DFB (Distributed Feedback Laser) lasers, the last step of the process needs to coat the cavity surface of the laser to realize the protection of the cavity surface, and by changing the emissivity of the cavity surface, it is realized for The gain effect of the laser output and the monitoring of the backlight; in addition, the quality of the cavity film layer also directly affects the service life and reliability of the laser. How to design a more reasonable film system and achieve excellent film quality has always been an industry practitioner At the same time, because the current high-speed chip solutions are generally made of Al-containing substrates (ie InGaAlAs) to improve the high-temperature characteristics of the laser, but because Al is easily oxidized, the laser cavity surface will be damaged after cleavage. There will be a risk of being oxidized when exposed to air, and then the cavity surface will be oxidized to form defect accumulation, which will easily form thermal energy accumulation during use, directly affect the mechanical properties and adhesion of the film layer, and then affect the reliability of the laser, leading to its failure

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