Quasi-periodic large-area high-temperature-resistant infrared heat radiator and preparation method thereof

Abstract

The invention discloses a quasi-periodic large-area high-temperature-resistant infrared heat radiator and a preparation method thereof.The radiator is composed of a multi-layer film structure and comprises a substrate, a metal layer, a medium a and a medium b, the thickness of the medium layer is obtained through optimization of a genetic algorithm, the thickness of each layer is 100-600 nm, and the thickness of each layer is 100-600 nm; the preparation method of the film system can adopt one or more combinations of magnetron sputtering, ion beam sputtering, electron beam evaporation, thermal evaporation, pulsed laser deposition, atomic layer deposition and the like. The infrared radiator has the advantages of high radiance, peak radiance close to 100%, simple structure, easiness in large-area preparation, adjustable wavelength, capability of being prepared on a flexible substrate, capability of resisting high temperature of 1000K and the like; the method has good application prospects in infrared light sources, chemical molecule characteristic peak detection, infrared imaging, photoelectric characteristic identification and novel infrared spectrometers.

Description

technical field [0001] The invention relates to the field of functional materials, in particular to a quasi-periodic large-area high-temperature-resistant infrared heat radiator and a preparation method thereof. Background technique [0002] Since Thomas Alva Edison improved the light bulb, the incandescent light bulb has become one of the main light sources and plays an indispensable role in human life. The light source generally produces light by heating the material of an incandescent lamp to a high temperature, which is called a heat source, and usually has a broadband emission spectrum and quasi-isotropic emission behavior. However, thermal radiators with narrow-band emission peaks and high orientation are of great interest in various applications, such as efficient infrared sensing, health detection, thermophotovoltaic, etc. Infrared thermal radiation imaging technology plays an extensive and huge role in the novel coronavirus epidemic. For a given sensing applicatio...

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Problems solved by technology

[0003] Patent CN106768352A discloses a narrow-band infrared radiation source and its preparation method. The radiation source is composed of a multilayer film structure, including a metal layer, a dielectric cavity layer and a dielectric Bragg reflector. The thickness of the dielectric cavity layer and the dielectric Bragg reflector can be To adjust the radiation center wavelength of the infrared narrowband radiation source, the preparation method of the film system can use one or more combinations of magnetron sputtering, ion beam sputtering, electron beam evaporation, thermal evaporation, pulsed laser deposition, atomic layer deposition, etc. However, the infrared narrowband radiation source disclosed in this patent has the following defects: (1) the metal substrate adopts gold, silver, copper, aluminum, tungsten, tantalum, rhenium metal materials, and these materials have poor adhesion and are easy to release the film. In addition, gold, silver Materials such as germanium, silicon, zinc sulfide or silicon monoxide are not resistant to high temperature; (3) The heat radiation period is composed of a metal layer, a dielectric cavity layer and a dielectric Bragg reflector, and there must be at least 5 groups of dielectric Bragg reflectors, with more layers and thicker thickness

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