P-benzoquinone detection and analysis method based on photoelectric cathode sensor

A photocathode and analysis method technology, applied in the field of analysis and detection, can solve the problems of low sensitivity, high cost of p-benzoquinone detection, complex analysis operation, etc., and achieve the effect of high sensitivity, wide detection concentration range, simple and efficient preparation process

Active Publication Date: 2022-04-01
HOHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Technical problem to be solved: the present invention provides a method for detecting and analyzing p-benzoquinone based on a photocathode sensor, by applying PN heterojunction to a photoelectrochemical sensor and applying it to the detection and analysis of p-benzoquinone to solve the problems in the prior art Lack of problems such as high cost, complicated analytical operation and low sensitivity for the detection of p-benzoquinone

Method used

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  • P-benzoquinone detection and analysis method based on photoelectric cathode sensor
  • P-benzoquinone detection and analysis method based on photoelectric cathode sensor
  • P-benzoquinone detection and analysis method based on photoelectric cathode sensor

Examples

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Embodiment 1

[0039] This embodiment provides a method for preparing a PN-type heterojunction, including the following steps:

[0040] (1) Fix the ITO conductive glass substrate on the glue homogenizer, use a pipette gun to take the ZnO seed layer mother liquid to drip-coat the conductive surface of the ITO conductive glass, and the ZnO seed layer mother liquid is made of Zn(CH 3 COO) 2 It is prepared by mixing with diethanolamine aqueous solution, in which Zn(CH 3 COO) 2 The final concentration of the ZnO seed layer is 0.1mol / L, the final concentration of diethanolamine is 0.1mol / L, and the volume of the ZnO seed layer mother solution is 100μL per square centimeter, and then spin-coated at 300rpm for 1min, and then spin-coated at 3000rpm for 2min , after spin coating, dry at 150°C for 5 minutes, repeat the spin coating and drying steps twice, then anneal at an annealing temperature of 350°C at a cooling rate of 2°C / min, and obtain ZnO seed layer modified ITO after annealing;

[0041] (2...

Embodiment 2

[0046] This example provides Cu 3 SnS 4 The preparation method of / ITO comprises the following steps: at first will contain Cu 3 SnS 4 The precursor solution was heated at 200°C for 12h, centrifuged at 5000rpm for 5min, washed with ultrapure water, and dried at 50°C to obtain Cu 3 SnS 4 powder, then take 20mg Cu 3 SnS 4 The powder was dispersed in 20mL absolute ethanol solution, and after ultrasonication for 20min, Cu 3 SnS 4 powder suspension. Finally, take the suspension and drop-coat it on the surface of the ITO glass slide, each drop-coating volume is 100 μL / cm 2 , after drying at room temperature, repeated drop-coating and drying operation 5 times to obtain Cu 3 SnS 4 / ITO.

Embodiment 3

[0048] This example provides a proof method for PN heterojunction, including a three-electrode system, using ZnO / ITO, Cu 3 SnS 4 / ITO or Cu 3 SnS 4 / ZnO-3 is the working electrode, Ag / AgCl is the reference electrode, and platinum wire is the counter electrode. The working electrode is prepared by the preparation method described in any one of the foregoing Examples 1 and 2.

[0049] Such as image 3 As shown, at pH 7 of 0.1mmol / L Na 2 SO 4 The Mott-Schottky performance test was carried out in solution. From image 3 (a) It can be seen that the capacitance value of ZnO semiconductor is 1 / C 2 In relation to the potential, the slope of the tangent line on the largest straight line of the curve is positive, indicating that the ZnO semiconductor is N-type. image 3 (b) shows Cu 3 SnS 4 Semiconductor capacitance 1 / C 2 The relationship with the potential, the slope of the tangent line on the largest straight line of the curve is negative, indicating that Cu 3 SnS 4 The s...

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Abstract

The invention discloses a p-benzoquinone detection and analysis method based on a photoelectric cathode sensor, which comprises the following steps: constructing a photoelectrochemical three-electrode system comprising a xenon lamp light source, a Cu3SnS4/ZnO/ITO working electrode, a platinum wire counter electrode and an Ag/AgCl reference electrode; the method comprises the following steps: adding p-benzoquinone solutions with different concentrations into a photoelectrochemical three-electrode system under the condition of switching on, and drawing I-T curves of the three-electrode system in the p-benzoquinone solutions with different concentrations under a set voltage range; and obtaining a p-benzoquinone quantitative detection standard curve according to the I-T curve, and carrying out trace analysis on an actual water sample. The photoelectric cathode sensor disclosed by the invention not only is low in preparation cost and convenient to operate, but also has the characteristics of high sensitivity and wide detection range on detection and analysis of p-benzoquinone, and can be applied to trace analysis of p-benzoquinone in an actual water sample.

Description

technical field [0001] The invention belongs to the technical field of analysis and detection, and in particular relates to a detection and analysis method for p-benzoquinone based on a photocathode sensor. Background technique [0002] P-benzoquinone is an important chemical raw material, widely used in industrial production, food processing, medical and health and other fields, but as one of the most toxic metabolites of benzene in the human body, p-benzoquinone is also harmful to human health and the environment. underestimate. As a highly toxic carcinogen, exposure to p-benzoquinone can produce adverse reactions such as skin irritation, cough, nausea, and headache. Long-term exposure can cause blindness and even induce leukemia. At present, the United States and other countries have formulated the maximum allowable concentration of p-benzoquinone in the environment, but its low concentration, strong polarity, and weak volatility make it difficult to be detected in trace...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/26
Inventor 白雪季业彤朱祖月
Owner HOHAI UNIV
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