Oxygen adsorbent, preparation method and method for reducing oxygen content in nitrous oxide feed gas

A nitrous oxide and adsorbent technology, applied in the field of gas purification, can solve the problems of low quality of nitrous oxide, and achieve the effects of good activity, improved purity and simple conditions

Active Publication Date: 2022-04-05
DALIAN KELIDE OPTOELECTRONICS MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims to overcome the problem of high impurity oxygen content in the nitrous oxide raw material gas in the prior art, resulting in lower quality of nitrous oxi

Method used

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  • Oxygen adsorbent, preparation method and method for reducing oxygen content in nitrous oxide feed gas
  • Oxygen adsorbent, preparation method and method for reducing oxygen content in nitrous oxide feed gas
  • Oxygen adsorbent, preparation method and method for reducing oxygen content in nitrous oxide feed gas

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preparation example Construction

[0046] Preparation of borosiloxane containing silicon hydrogen structure:

[0047] Under the protection of nitrogen, 1.22g (10mmol) of phenylboronic acid was dissolved in 50ml of tetrahydrofuran, and then a mixture of 5.56g (50mmol) of methyldichlorosilane and 20ml of tetrahydrofuran was added dropwise, and the reaction solution was obtained after 3 hours at room temperature. Then the reaction solution was added dropwise to a suspension containing 5g of zinc oxide and 500ml of ethyl acetate, and after reacting at room temperature for 12 hours, the zinc salt was removed by filtration, and the filtrate was washed with water and evaporated to remove tetrahydrofuran to obtain a mixed borosiloxane 2.53 g (yield 78.8%), its gaseous analysis GC diagram is shown in figure 2 shown.

[0048] Preparation of borosiloxane containing vinyl structure:

[0049] Under the protection of nitrogen, 1.22g (10mmol) of phenylboronic acid was dissolved in 50ml of tetrahydrofuran, and then a mixtur...

Embodiment 1

[0051] A kind of preparation method of oxygen adsorbent, the preparation method of described oxygen adsorbent is as follows:

[0052] (1) Disperse 1.5g of manganese oxide powder into 100ml of toluene to form a dispersion;

[0053] (2) Dissolve 10g of borosiloxane containing silicon hydrogen structure and 8g of borosiloxane with vinyl structure in the above dispersion liquid respectively, add 5mg of chloroplatinic acid to it, stir and react at 85°C for 4h to obtain Polyborosiloxane gel coated with manganese oxide;

[0054] (3) Remove toluene in polyborosiloxane gel by means of supercritical drying. The medium of supercritical drying is carbon dioxide, the supercritical temperature is 32°C, and the supercritical pressure is 7.5MPa. Polyborosiloxane was heat-treated at 700°C for 6 hours under the protection of nitrogen, and the oxygen adsorbent was obtained by cooling down. The electron microscope photos are as follows: figure 1 shown.

Embodiment 2

[0056] A kind of preparation method of oxygen adsorbent, the preparation method of described oxygen adsorbent is as follows:

[0057] (1) Disperse 4.05g of manganese oxide powder into 100ml of toluene to form a dispersion;

[0058] (2) Dissolve 15g of borosiloxane containing silicon hydrogen structure and 12g of borosiloxane with vinyl structure in the above dispersion liquid respectively, add 13.5mg of chloroplatinic acid to it, stir and react at 85°C for 3h, Obtain polyborosiloxane gel coated with manganese oxide;

[0059] (3) Remove toluene in polyborosiloxane gel by means of supercritical drying. The medium of supercritical drying is carbon dioxide, the supercritical temperature is 32°C, and the supercritical pressure is 7.5MPa. The polyborosiloxane was heat-treated at 800° C. for 3 hours under the protection of nitrogen, and the temperature was lowered to obtain an oxygen adsorbent.

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Abstract

The invention relates to the field of gas purification, in particular to an oxygen adsorbent which comprises a porous silicon dioxide skeleton, and the porous silicon dioxide skeleton is connected with a boron element through a chemical bond; a platinum compound and a low-valence manganese compound are physically loaded on the porous silicon dioxide skeleton. The boron element is connected to the porous silicon dioxide skeleton through chemical bonds, and meanwhile, the low-valence manganese compound is loaded on the surface, so that oxygen in nitrous oxide can be effectively adsorbed, and the purity of nitrous oxide gas is improved. Meanwhile, the oxygen adsorbent has the advantages of being good in activity and capable of being repeatedly used, the oxygen adsorbent is simple in condition in the reactivation process, safe and effective, and purification of industrial electronic gas is quite facilitated.

Description

technical field [0001] The invention relates to the field of gas purification, in particular to an oxygen adsorbent, a preparation method and a method for reducing the oxygen content in nitrous oxide feed gas. Background technique [0002] Electron gas is an essential raw material in the IC manufacturing process, and it is also widely used in optoelectronics, compound semiconductors, solar photovoltaic cells, liquid crystal displays, optical fiber manufacturing and many other fields. The front-end processes of IC manufacturing, such as epitaxy, chemical vapor deposition, ion implantation, doping, etching, cleaning, and masking film formation, almost all require different types and purity of electrical gases. It is these gases that are used in different processes. Silicon wafers have semiconductor properties. [0003] As an important gas in IC manufacturing, nitrous oxide is used in oxidation and chemical vapor deposition processes in semiconductor production. Usually, low-p...

Claims

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Application Information

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IPC IPC(8): B01J20/10B01J20/30C01B21/22
CPCC01B21/22B01J20/30B01J20/10
Inventor 赵毅石琳李文博金龙寻虎
Owner DALIAN KELIDE OPTOELECTRONICS MATERIALS CO LTD
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