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Method for growing nitride on diamond

A diamond and nitride technology, which is applied in the field of semiconductor materials, can solve the problems of inability to epitaxially produce gallium nitride materials, large differences in lattice constant and thermal expansion coefficient, and large differences in crystal structure.

Pending Publication Date: 2022-04-12
DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are two major difficulties in directly growing gallium nitride materials on single crystal diamond: diamond has a cubic phase structure, while gallium nitride materials have a hexagonal wurtzite structure, and the crystal structures of the two are quite different
Another difficulty is that the lattice constants and thermal expansion coefficients of the two are quite different, and it is basically impossible to epitaxially produce high-quality gallium nitride materials on diamond single crystal substrates.

Method used

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  • Method for growing nitride on diamond

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Effect test

Embodiment 1

[0037] see figure 1 Shown, a kind of method for growing nitride on diamond, the method for growing nitride on described diamond comprises the steps:

[0038] (1) Prepare one group of diamond single crystal substrates and three groups of diamond polycrystalline polished substrates;

[0039] (2) Prepare gallium nitride / graphene / diamond materials on one of the diamond single crystal substrates;

[0040] (3) Prepare gallium nitride / molybdenum sulfide / diamond materials on the other three groups of diamond polycrystalline polished substrates.

[0041] Further, in the step (2), graphene is prepared by using a two-step method of exfoliating graphene on a diamond single crystal substrate, mixing natural flakes and NMP, and ultrasonically ultrasonicating the mixed solution with a power of 650W. After 7 hours, the mixed solution was centrifuged and dried by a centrifuge; NMP was added to mix, and the mixed solution was ultrasonically ultrasonicated for 28 hours by an ultrasonic machine...

Embodiment 2

[0045] see figure 1 Shown, a kind of method for growing nitride on diamond, the method for growing nitride on described diamond comprises the steps:

[0046] (1) Prepare one group of diamond single crystal substrates and three groups of diamond polycrystalline polished substrates;

[0047] (2) Prepare gallium nitride / graphene / diamond materials on one of the diamond single crystal substrates;

[0048](3) Prepare gallium nitride / molybdenum sulfide / diamond materials on the other three groups of diamond polycrystalline polished substrates.

[0049] Further, in the step (3), a metal molybdenum layer of 5nm is prepared by PVD on one group of diamond polycrystalline polished substrates; specifically, the molybdenum / diamond substrate is put into a tube furnace , the air pressure is 800torr, and under the condition of temperature 1000 degrees Celsius, hydrogen sulfide gas is introduced to carry out high-temperature reaction for 20 minutes to generate molybdenum sulfide; put the prepa...

Embodiment 3

[0052] see figure 1 Shown, a kind of method for growing nitride on diamond, the method for growing nitride on described diamond comprises the steps:

[0053] (1) Prepare one group of diamond single crystal substrates and three groups of diamond polycrystalline polished substrates;

[0054] (2) Prepare gallium nitride / graphene / diamond materials on one of the diamond single crystal substrates;

[0055] (3) Prepare gallium nitride / molybdenum sulfide / diamond materials on the other three groups of diamond polycrystalline polished substrates.

[0056] Further, in the step (3), a layer of 3nm boron nitride two-dimensional film material is prepared by PVD method on one of the group of diamond polycrystalline polished substrates; specifically: boron nitride is used as the target raw material , through the argon gas at 20S degree Celsius degree Celsius degree Celsius, the contrast temperature is between 300-400 degree Celsius, the power is 120W, and the time is 1min-5min, and the boro...

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Abstract

The invention discloses a method for growing nitride on diamond, and the method comprises the following steps: preparing a group of diamond single crystal substrates and three groups of diamond polycrystalline polishing substrates, preparing a gallium nitride / graphene / diamond material on one group of diamond single crystal substrates, and preparing a gallium nitride / graphene / diamond material on the other group of diamond polycrystalline polishing substrates; and preparing a gallium nitride / molybdenum sulfide / diamond material on the other three groups of diamond polycrystalline polishing substrates. The problems of lattice mismatch and stress mismatch encountered when the nitride directly grows on the diamond are solved, and the high-quality nitride epitaxial material can be directly grown on the diamond through the method.

Description

technical field [0001] The present application relates to the field of semiconductor materials, in particular to a method for growing nitride on diamond. Background technique [0002] Power devices of third-generation semiconductor materials have excellent characteristics such as low on-resistance, high mobility, high power density, and high radiation resistance, breaking through the physical performance limits of traditional devices. Compared with devices such as traditional Si materials, GaN-based devices have higher power density output, higher strong field, and lower on-resistance. Its excellent performance makes it widely used in consumer electronics, 5G communications, cloud services, photovoltaic inverters, new energy vehicles, power generation and other fields. [0003] High-reliability gallium nitride devices for industrial control have not yet appeared globally. This is mainly because the thermal conductivity of silicon, silicon carbide and other substrates used ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02C23C14/02C23C14/06C23C14/18C23C14/58
Inventor 王新强王琦梁智文
Owner DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV