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D-A-D type organic semiconductor material and preparation method and application thereof

An organic semiconductor, D-A-D technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, organic chemistry, etc., can solve the problems of inefficient battery efficiency, poor stability, complex synthesis, etc., to improve hole mobility, improve efficiency, The effect of a simple synthesis route

Active Publication Date: 2022-04-15
HUAIYIN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although some progress has been made, there are still many problems in the organic hole materials used in PSCs: such as complex synthesis, high cost, poor stability and low battery efficiency, etc.

Method used

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  • D-A-D type organic semiconductor material and preparation method and application thereof
  • D-A-D type organic semiconductor material and preparation method and application thereof
  • D-A-D type organic semiconductor material and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Synthesis of Organic Semiconductor Materials (5)

[0031] The synthetic route is as follows:

[0032]

[0033] The raw material (1) used in this example is prepared according to the literature Arroyave, F.A.; Richard, C.A.; Reynolds, J.R.Org.Lett.2012, 14, 6138-6141; A.; Ibrahim Dar, M.; Gao, P.; Jankauskas, V.; Jacopin, G.; .Soc.2015,137,16172-16178. Prepared; other reagents can be obtained commercially.

[0034] The synthesis of formula (3) compound:

[0035] Under the protection of argon, add 378mg of raw material (1), 108mg of compound of formula (2), 10mL of ethanol and 1mL of acetic acid into a 100mL two-necked round-bottomed flask successively, and heat to reflux at 120°C for 3h; The yellow-green solid obtained by suction filtration with water and ethanol was compound (3), and 180 mg of the product was obtained with a yield of 40%. HRMS (ESI) calcd for C 16 h 7 Br 2 N 2 S 2 (M+H + ):448.8417.found:448.8381.

[0036] The synthesis of D-A-D type organ...

Embodiment 2

[0039] The synthesis of formula (3) compound:

[0040] Under the protection of argon, add 378mg of raw material (1), 183mg of the compound of formula (2), 10mL of ethanol and 1mL of acetic acid into a 100mL two-necked round-bottomed flask successively, and heat to reflux at 120°C for 3h; Suction filtration of water and ethanol gave a yellow-green solid which was compound (3), and 243 mg of the product was obtained with a yield of 54%.

[0041] Synthesis of D-A-D type organic semiconductor material (5):

[0042] Under the protection of argon, in a 100mL two-necked round-bottomed flask, add successively 450mg of the compound shown in formula (3), 3010mg of the compound of formula (4), 22mg of tetrakistriphenylphosphine palladium, 2453mg of potassium carbonate (2mol / L) and 20mL Toluene; the reaction system was heated to 90°C for 8 hours and cooled to room temperature, and the solvent was distilled off under reduced pressure; the crude product was purified by column chromatograph...

Embodiment 3

[0044] The D-A-D type organic semiconductor material (5) prepared in Example 1 is used as a hole transport material, according to the literature: Wang, J.; Zhang, H.; Wu, B.; Wang, Z.; Sun, Z .; Xue, S. Wu, Y.; Hagfeldt, A.; Liang, M. Angew. Chem. 2019, 58, 15721-15725. Preparation of perovskite solar cells. Test light source: AM 1.5 (solarsimulator-Oriel 91160-1000, 300W), data acquisition using Keithley 2400 digital source meter. see test results Figure 7 , the short-circuit photocurrent density of the battery device reaches 23.85mA cm -2 , the open circuit voltage is 1.076V, the fill factor is 0.744, and the photoelectric conversion efficiency reaches 19.09%.

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Abstract

The invention relates to the technical field of organic semiconductors, and particularly discloses a D-A-D type organic semiconductor material and a preparation method and application thereof. According to the invention, phenazine and thiophene are fused to construct a five-membered fused ring with an electron-deficient characteristic, and then the five-membered fused ring is coupled with a peripheral modification group of triphenylamine to design and synthesize a D-A-D type organic semiconductor material. The organic semiconductor material is simple in synthetic route, low in cost and suitable for mass production. Meanwhile, due to the multi-nitrogen and multi-sulfur atom characteristics in molecules, the interface interaction between the molecules and a perovskite layer can be enhanced, and the hole extraction efficiency is improved. When the compound is applied to a perovskite solar cell as a hole transport material, the photoelectric conversion efficiency of the cell exceeds 19%, and the compound shows excellent device stability and has an important application prospect.

Description

technical field [0001] The invention belongs to the technical field of organic semiconductor materials, and in particular relates to a D-A-D type organic semiconductor material and its preparation method and application. Background technique [0002] As a very common energy source, solar energy has the advantages of zero pollution, renewable, easy to obtain and safe, and has gradually become a research hotspot for scientists. In the course of more than 100 years of development, solar cells have experienced three development stages, namely, the first generation of crystalline silicon photovoltaic cells, the second generation of thin-film solar cells and the third generation of new solar cells. How to utilize solar energy efficiently and at low cost is a question that all solar cell researchers will think about. As a new generation of photovoltaic technology, perovskite solar cells (Perovskite Solar Cells, referred to as PSCs). From the initial 3.9% to the current over 25%, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07D495/14H01L51/42H01L51/46
CPCY02E10/549
Inventor 许晨红杨踪远侯若依陈梓周素芹蒋金龙吴妹
Owner HUAIYIN INSTITUTE OF TECHNOLOGY