Lateral double diffused field effect transistor, manufacturing method, chip and circuit

Abstract

The invention provides a lateral double-diffusion field effect transistor, a manufacturing method, a chip and a circuit. Transistors include: SOI substrate, SOI substrate includes silicon substrate, oxide layer and upper silicon in sequence from bottom to top; upper silicon is a convex trapezoidal structure with two slopes; In the region, the body region has the first conductivity type, and the drift region has the second conductivity type; the source electrode is formed on the upper surface of the body region and the outer edges of the two slopes of the body region; the drain electrode is formed on the upper surface of the drift region and the outer edge of the two slopes of the drift region; the silicon dioxide layer is formed on the upper surface of the body region, the upper surface of the drift region and the two slopes of the drift region; the gate is formed on the two slopes of the body region on the slopes; the polysilicon field plate is formed on the surface of the silicon dioxide layer on the two slopes of the drift region. Through the method provided by the invention, the control ability of the gate to the channel can be improved, and the breakdown voltage can be improved.

Description

Lateral double diffusion field effect transistor, fabrication method, chip and circuit technical field The present invention relates to the field of semiconductor technology, in particular, to a lateral double-diffusion field effect transistor, a lateral A method for manufacturing a double diffusion field effect transistor, a chip and a circuit. Background technique Lateral Double Diffused Field Effect Transistor (Lateral Double-Diffused MOSFET, LDMOS) is used as a kind of Lateral power devices, whose electrodes are all located on the surface of the device, are easily connected to low-voltage signal circuits and other The monolithic integration of the device has the advantages of high withstand voltage, large gain, good linearity, high efficiency, and good broadband matching performance. Nowadays, it has been widely used in power integrated circuits, especially low-power and high-frequency circuits. [0003] With the rapid development of semiconductor manufacturing t...

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Problems solved by technology

[0003] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration, and the gate size of lateral double diffused field effect transistors is also getting shorter and shorter, making the gate The ability to control the channel current becomes weaker, resulting in leakage current, which eventually affects the electrical performance of semiconductor devices and reduces the breakdown voltage

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