Synthesis method of bismuth telluride-based semiconductor thermoelectric material

A thermoelectric material, bismuth telluride-based technology, which is applied in the directions of thermoelectric device junction lead-out materials, selenium/tellurium compounds, chemical instruments and methods, etc. efficiency and other issues, to achieve the effect of wide performance adjustment range, low cost and simple preparation process

Pending Publication Date: 2022-05-06
SUZHOU UNIV OF SCI & TECH +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problems of low efficiency, large temperature difference and difficulty in realizing high energy density heat source of existing semiconductor thermoelectric devices, the present invention provides a kind of thermoelectric device with a ZT of 1.2 in the temperature range near room temperature and a nonuniformity of physical properties ≤ 5 along the crystal growth direction. % Synthesis of Bismuth Telluride-Based Rod-shaped Thermoelectric Materials Embedded with Nanocrystalline Grains to Overcome the Shortcomings of the Existing Techniques

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Synthesis method of bismuth telluride-based semiconductor thermoelectric material
  • Synthesis method of bismuth telluride-based semiconductor thermoelectric material
  • Synthesis method of bismuth telluride-based semiconductor thermoelectric material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The synthesis method of bismuth telluride-based thermoelectric material inlaid with N-type nano crystal grains comprises the following steps:

[0034] 1. Place the N bismuth telluride-based thermoelectric material sintered by the fusion method in the vacuum-tight quartz tube in the zone melting-directional solidification vertical zone furnace assisted by inductive coupling, and move the columnar heating ring to the bottom of the quartz tube, and set the heating The temperature is 973K;

[0035] 2. After the temperature reaches 973K, stabilize for 30 minutes, start the induction coupling auxiliary heating system, and set the frequency to 600KHz;

[0036] 3. Set the heating body lifting speed to 0.2mm / min, start the heating body lifting device, and slowly lift the heating body;

[0037] 4. When the upper edge of the zone melting resistance heating body reaches the upper edge of the top material in the quartz tube, high-purity argon gas is introduced at a flow rate of 2 S...

Embodiment 2

[0041] The synthesis method of bismuth telluride-based thermoelectric material inlaid with P-type nano crystal grains comprises the following steps:

[0042] 1. Place the P bismuth telluride-based thermoelectric material sintered by the fusion mixing method in a vacuum-tight quartz tube in a zone melting-directional solidification vertical zone furnace assisted by inductive coupling, move the columnar heating ring to the bottom of the quartz tube, and set the heating The temperature is 893K,;

[0043] 2. After the temperature reaches 893K, stabilize for 30 minutes, start the induction coupling auxiliary heating system, and set the frequency to 800KHz;

[0044] 3. Set the heating body lifting speed to 0.5mm / min, start the heating body lifting device, and slowly lift the heating body;

[0045] 4. When the upper edge of the zone melting resistance heating body reaches the upper edge of the top material in the quartz tube, high-purity argon gas is introduced at a flow rate of 5 S...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The method comprises the following steps: 1) an inductive coupling assisted zone melting-directional solidification vertical zone melting method; 2) a high-density crystal nucleus rapid forming method; and 3) a solid-liquid-vapor volume ratio control method for argon pressure modulation. By modulating and controlling the nucleation and growth process of the crystal through the temperature gradient at the growth front edge, the supercooled molten liquid temperature and the volume ratio of solid, liquid and steam aggregation states at the crystallization front edge, the bismuth telluride-based rod-like thermoelectric material inlaid with the nano-crystalline grains is obtained, wherein the ZT of the bismuth telluride-based rod-like thermoelectric material in the temperature zone near the room temperature reaches 1.2, and the unevenness of the physical property in the crystal growth direction is smaller than or equal to 5%. The thermoelectric material synthesized by the invention greatly promotes the improvement of the performance of a semiconductor thermoelectric device, and can be widely applied to the fields of efficient waste heat recovery, active point temperature management and the like.

Description

technical field [0001] The invention relates to a material synthesis method, especially a synthesis method of a semiconductor thermoelectric material, specifically a bismuth telluride-based bismuth telluride inlaid with nano-grains with uniform physical properties along the crystal growth direction and a ZT of 1.2 in the temperature range near room temperature. Synthesis method of rod-shaped thermoelectric materials. Background technique [0002] Thermoelectric (TE) phenomenon is also called thermoelectric phenomenon. In 1822, Thomas Seebeck discovered the thermoelectric potential effect (the principle of TE material power generation); in 1834, Jean Peltier discovered the cooling effect at the junction of two different material conductors in the current loop (the principle of TE material refrigeration). Some good semiconductor TE materials were discovered in the 1950s. Usually the material with ZT≥0.5 is called TE material. The larger the ZT, the higher the efficiency of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16C30B29/46C30B29/68C30B28/06C30B28/08C01B19/00
CPCC30B29/46C30B29/68C30B28/06C30B28/08C01B19/007H10N10/852
Inventor 刘宏程新利章于道
Owner SUZHOU UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap