Synthesis method of bismuth telluride-based semiconductor thermoelectric material

Abstract

The method comprises the following steps: 1) an inductive coupling assisted zone melting-directional solidification vertical zone melting method; 2) a high-density crystal nucleus rapid forming method; and 3) a solid-liquid-vapor volume ratio control method for argon pressure modulation. By modulating and controlling the nucleation and growth process of the crystal through the temperature gradient at the growth front edge, the supercooled molten liquid temperature and the volume ratio of solid, liquid and steam aggregation states at the crystallization front edge, the bismuth telluride-based rod-like thermoelectric material inlaid with the nano-crystalline grains is obtained, wherein the ZT of the bismuth telluride-based rod-like thermoelectric material in the temperature zone near the room temperature reaches 1.2, and the unevenness of the physical property in the crystal growth direction is smaller than or equal to 5%. The thermoelectric material synthesized by the invention greatly promotes the improvement of the performance of a semiconductor thermoelectric device, and can be widely applied to the fields of efficient waste heat recovery, active point temperature management and the like.

Description

technical field [0001] The invention relates to a material synthesis method, especially a synthesis method of a semiconductor thermoelectric material, specifically a bismuth telluride-based bismuth telluride inlaid with nano-grains with uniform physical properties along the crystal growth direction and a ZT of 1.2 in the temperature range near room temperature. Synthesis method of rod-shaped thermoelectric materials. Background technique [0002] Thermoelectric (TE) phenomenon is also called thermoelectric phenomenon. In 1822, Thomas Seebeck discovered the thermoelectric potential effect (the principle of TE material power generation); in 1834, Jean Peltier discovered the cooling effect at the junction of two different material conductors in the current loop (the principle of TE material refrigeration). Some good semiconductor TE materials were discovered in the 1950s. Usually the material with ZT≥0.5 is called TE material. The larger the ZT, the higher the efficiency of ...

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problems of low efficiency, large temperature difference and difficulty in realizing high energy density heat source of existing semiconductor thermoelectric devices, the present invention provides a kind of thermoelectric device with a ZT of 1.2 in the temperature range near room temperature and a nonuniformity of physical properties ≤ 5 along the crystal growth direction. % Synthesis of Bismuth Telluride-Based Rod-shaped Thermoelectric Materials Embedded with Nanocrystalline Grains to Overcome the Shortcomings of the Existing Techniques

Images