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Passivated contact battery and preparation process thereof

A preparation process and battery technology, applied in the field of solar cells, can solve the problems of increasing metal recombination, reducing the photoelectric conversion efficiency of cells, and weak corrosion resistance of silver paste.

Active Publication Date: 2022-05-20
TONGWEI SOLAR ENERGY MEISHAN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, on the one hand, during the PECVD deposition poly-Si process and the subsequent high-temperature annealing process, there is a serious problem of film explosion, which leads to a decrease in the photoelectric conversion efficiency of the battery.
[0007] On the other hand, the heavily doped polysilicon on the back has weak resistance to silver paste corrosion during the screen printing process, and is easily pierced by metals to increase metal recombination, resulting in a decrease in photoelectric conversion efficiency.

Method used

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  • Passivated contact battery and preparation process thereof
  • Passivated contact battery and preparation process thereof
  • Passivated contact battery and preparation process thereof

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preparation example Construction

[0055] In the preparation process of the passivated contact cell provided by the present application, in the back field structure, an intrinsic silicon carbide layer and a phosphorus-doped silicon carbide layer are sequentially grown on the surface of the tunnel oxide layer, instead of the traditional polysilicon structure. have at least the following effects:

[0056] 1. Compared with PECVD deposition poly-Si, SiC x The H in it is difficult to escape. Under the PECVD deposition process, in the PECVD deposition process, the problem of film explosion can be significantly improved, which is conducive to enhancing the passivation performance of the battery, and is conducive to improving Voc and battery efficiency.

[0057] 2. SiC x Compared with poly-Si, it has higher hardness, and it can improve the corrosion resistance of silver paste on the back side during the sintering process of annealing treatment, thereby reducing metal penetration and metal recombination, which is also ...

Embodiment approach

[0092] Regarding the above steps, in some exemplary embodiments, the tunnel oxide layer, the intrinsic silicon carbide layer, the phosphorus-doped silicon carbide layer, and the SiO xWhen the mask layers are all deposited by PECVD equipment, the multiple film layers can be deposited in one tube without breaking the vacuum. Of course, it should be noted that in this application, there is no limit to the formation methods of the various film layers, for example but not limited to plasma enhanced physical vapor deposition (PVD), chemical vapor deposition (CVD) technology, metal organic compound Chemical vapor deposition (MOCVD), etc.

[0093] Regarding the steps of annealing treatment: the annealing temperature is 600-1000°C, optionally, the annealing temperature is 900-940°C, such as but not limited to 600°C, 700°C, 800°C, 900°C, 910°C, 920°C Any one of °C, 930 °C, 940 °C, 950 °C and 1000 °C or a range value between any two.

[0094] The annealing time is 10-60 min, and the an...

Embodiment 1

[0103] A preparation process for a passivated contact battery, comprising:

[0104] S1. Texturing: preparing N-type silicon wafers, using 1% lye for texturing, and using hydrogen peroxide and alkali to clean the silicon wafers.

[0105] S2, boron expansion: enter the boron diffusion furnace, use BCl 3 Diffusion at 1000°C forms a p-n junction.

[0106] S3. Alkali polishing: Use a chain-type HF machine to remove the BSG with boron expansion on the back, and then transfer it to a trough-type alkali polishing machine by a robot to remove the p-n junctions on the back and edges.

[0107] S4. Growing a tunneling oxide layer on the back side of the silicon wafer: using PECVD to inject O 2 , grow a tunnel oxide layer SiO with a thickness of 1nm x .

[0108] S5. Growing an intrinsic silicon carbide layer on the surface of the tunneling oxide layer: using PECVD to inject CH 4 、SiH 4 and H 2 Reactive deposition; where, CH 4 and SiH 4 The volume ratio of the silicon carbide layer...

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Abstract

The invention discloses a passivation contact cell and a preparation process thereof, and belongs to the field of solar cells. The invention discloses a preparation process of a passivation contact cell. The preparation of a back surface field passivation structure comprises the following steps: growing a tunneling oxide layer on the back surface of a silicon wafer; growing an intrinsic silicon carbide layer on the surface of the tunneling oxide layer; growing a phosphorus-doped silicon carbide layer on the surface of the intrinsic silicon carbide layer; and annealing treatment is carried out, so that phosphorus in the phosphorus-doped silicon carbide layer and silicon carbide form covalent bonds. The passivation contact cell can be prepared through the preparation process and comprises the silicon wafer, and the tunneling oxide layer, the intrinsic silicon carbide layer and the phosphorus-doped silicon carbide layer which are sequentially stacked on the back surface of the silicon wafer. According to the preparation process and the battery, the problem of serious film explosion of a back surface field passivation structure obtained by PECVD deposition can be effectively relieved; and the silver paste corrosion resistance of the back surface can be improved, so that the metal piercing phenomenon is reduced, and the metal compounding is reduced.

Description

technical field [0001] The present application relates to the field of solar cells, in particular to a passivated contact cell and a preparation process thereof. Background technique [0002] Compared with other traditional solar cells, doped oxide layer passivated contact cells can significantly improve the photoelectric conversion efficiency of solar cells, and currently occupy a certain market share and have extremely high industrialization value. [0003] At present, the key part of the doped oxide layer passivation contact cell technology is to first grow a tunnel oxide layer SiO with a thickness of about 1.4nm on the back of the cell. x , and then deposit phosphorus-doped n+-poly-Si (heavily doped polysilicon) film, which can effectively reduce the rear recombination current density after high-temperature annealing. [0004] In the process of large-scale mass production of doped oxide layer passivation contact cells, there are two main technical routes as follows: ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216H01L31/068
CPCH01L31/1804H01L31/1864H01L31/02167H01L31/068Y02E10/547Y02P70/50H01L31/022425
Inventor 陈浩吴伟梁徐文州孟夏杰姚骞王秀鹏邢国强
Owner TONGWEI SOLAR ENERGY MEISHAN CO LTD