Perovskite photoelectric detector and preparation method thereof

Abstract

The invention provides a perovskite photoelectric detector and a preparation method thereof. The perovskite photoelectric detector comprises a polyvinyl alcohol-nano metal particle layer and a perovskite layer which are arranged in a laminated manner, and a cavity is formed between the polyvinyl alcohol-nano metal particle layer and the perovskite layer. The preparation method of the perovskite photoelectric detector comprises the following steps: forming the polyvinyl alcohol-nano metal particle layer on a first substrate by using a polyvinyl alcohol solution containing metal nano particles; coating a second substrate with a PbX solution to obtain a PbX thin film, then reacting the PbX thin film with the YX solution to obtain a perovskite polycrystalline thin film, and annealing to obtain a perovskite layer; and laminating the polyvinyl alcohol-nano metal particle layer and the perovskite layer to obtain the perovskite photoelectric detector. According to the perovskite photoelectric detector provided by the invention, the distance between the metal nanoparticles and the perovskite is controlled through the cavity between the polyvinyl alcohol-nano metal particle layer and the perovskite layer, so that the LSPR enhancement effect is realized.

Description

technical field [0001] The present application relates to the field of materials, in particular to a perovskite photodetector and a preparation method thereof. Background technique [0002] All-inorganic halide perovskite materials have attracted a lot of attention due to their excellent photoelectric conversion properties and high carrier mobility. The excellent optoelectronic properties make perovskite materials have good application prospects in light-emitting diodes, photodetectors, solar cells and other devices. Among them, photodetectors refer to devices that convert optical signals into electrical signals, and are important devices in the fields of optical communication, image sensing, digital imaging, chemical and biological monitoring, etc. According to different working mechanisms, photoelectric detectors are divided into photoconductive type and photovoltaic type. Photoconductive detectors are caused by photo-excited electrons that lead to an increase in conducta...

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Problems solved by technology

However, when the metal nanoparticles are close to the surface of the semiconductor, in addition to the LSPR effect, there may be a process in which the thermal electrons of the semiconductor are directly transferred to the metal nanoparticles, resulting in the quenching of the semiconductor. thereby negatively affecting the performance of the semiconductor

In order to avoid the loss of hot electrons from the surface of the perovskite, a spacer layer is usually introduced between the metal nanoparticles and the perovskite. The material is SiO, polymethyl methacrylate, etc., and the spacer layer is between the metal nanoparticles and the perovskite Provide a huge potential barrier between them to prevent the transfer of hot electrons, but the stability of the perovskite material is not good, the growth process of the spacer layer on the surface will have a negative impact on the performance of the perovskite, and the insulating layer in the structure makes the perovskite The mine layer is separated from the electron transport layer, which also has a negative impact on the design of the overall detector structure

Dissolving metal nanoparticles in the hole transport layer can avoid direct contact with the perovskite layer, but it is impossible to specifically control the distance between the perovskite and the perovskite. Too close will lead to the transfer of perovskite hot electrons, and too far will lead to lower The LSPR coupling coefficient

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