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Chiral-oriented segmented copolymer self-assembly photoetching method

A block copolymer and self-assembly technology, which is applied in microlithography exposure equipment, photolithography exposure equipment, semiconductor/solid-state device manufacturing, etc., can solve problems such as high defect rate, limited application, and large difference in surface energy. Achieve the effect of improving guiding force, defect rate and reducing line edge roughness

Pending Publication Date: 2022-05-27
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The template of the graph epitaxy method can be prepared by mature 193nm lithography technology, but the accuracy of the front template will significantly affect the block copolymer-oriented defect rate and the roughness of the structure, and the structure of the front template will be retained in the final pattern, limit its application
Compared with graph epitaxy, chemical epitaxy can effectively avoid the limitation of the front template groove, and is also conducive to the improvement of resolution, but the force of chemical infiltration is limited, and it is difficult to fully guide the block copolymer during annealing, resulting in high defect rate
Increasing the interaction parameter χ of the two phases can obtain patterns with higher resolution and stronger guiding force, but when the value of χ is too large, the surface energy difference between the blocks is too large, and surface infiltration will occur. Forms a domain structure parallel to the substrate instead of a vertical structure, making pattern transfer impossible

Method used

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  • Chiral-oriented segmented copolymer self-assembly photoetching method
  • Chiral-oriented segmented copolymer self-assembly photoetching method
  • Chiral-oriented segmented copolymer self-assembly photoetching method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Self-assembly of AB-type polystyrene-(S)polypropylene carbonate (PS-b-(S)PPC) block copolymers under (R)PPC chirality guidance, such as figure 1 shown:

[0047] 5 mg of (R)PPC homopolymer was dissolved in 1.0 g of chlorobenzene, wherein (R)PPC had a molecular weight of 6.7 kDa, a molecular weight distribution of 1.03, and an e.e. value >99%. Spin coating the completely dissolved (R)PPC chlorobenzene solution onto the hydrophilized modified silicon wafer at a rotational speed of 4000 rpm (a silicon dioxide layer with a thickness of about 1.5 nm is obtained by oxygen plasma etching or piranha solution oxidation), High-temperature annealing at 180 °C for 2 h, ultrasonication with chlorobenzene for 5 minutes, a total of 5 times, to remove the ungrafted (R)PPC homopolymer, and obtain a layer of (R)PPC polymer brush with a thickness of 5 nm. PMMA-950 photoresist was spin-coated on the (R)PPC polymer brush, and the (R)PPC grating structure with a period of 78 nm and a line wi...

Embodiment 2

[0050] Under the same preparation method, equipment and operating conditions as in Example 1, only the molecular weight of the block copolymer was changed from 12.4k / 14.7k (PS / PPC) to 8.9k / 10.8k (PS / PPC). The volume ratio of the segments is 0.50, and the period and linewidth of the chiral directing substrate are changed from 78 / 29 nm to 56 / 21 nm. Depend on Figure 4 The SEM photo shown shows that a large-area defect-free vertical domain-oriented self-assembled grating structure with a half-pitch of 7.1 nm is obtained.

Embodiment 3

[0052] Under the same preparation method, equipment and operating conditions as in Example 1, only the molecular weight of the block copolymer was changed from 12.4k / 14.7k (PS / PPC) to 12.4k / 27.2k (PS / PPC). The volume ratio of the segment is 0.35, the film thickness is changed from 19 nm to 28 nm, and the chiral guide substrate is changed from a grating structure with a period and line width of 78 / 29 nm to a hexagonal lattice structure with a period of 56 nm and a dot diameter of 14 nm. A large-area defect-free vertical domain-oriented self-assembled hexagonal lattice structure was obtained with a half-pitch of 13.8 nm.

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Abstract

The invention discloses a chirality-oriented segmented copolymer self-assembly photoetching method. The method comprises the following steps: (1) grafting a chirality homopolymer layer on the surface of a substrate; (2) etching the chiral homopolymer layer into a periodic structure through a photoetching technology; (3) backfilling and grafting a neutral layer in gaps of the periodic structure of the chiral homopolymer to form a chiral guide substrate; (4) spin-coating the chiral block copolymer on a chiral guide substrate, and annealing to obtain a chiral guide self-assembly structure; wherein the chiral block copolymer at least comprises a chiral block, the chiral homopolymer and the chiral block in the chiral block copolymer are the same or are stereoisomers of each other, and the neutral layer is a two-phase interaction similar polymer of the chiral block copolymer. According to the method, the guiding acting force in the guiding self-assembly process of the block copolymer can be remarkably improved, and the defect rate and the line edge roughness of a final guiding structure are effectively reduced.

Description

technical field [0001] The invention relates to the field of block copolymer-oriented self-assembly, in particular to a chirality-oriented block copolymer self-assembly lithography method. Background technique [0002] Since its birth in 1946, the computer has evolved from a behemoth weighing more than 30 tons to a readily available everyday device, and its computing power has increased hundreds of millions of times, all thanks to the rapid density of transistors in semiconductor chips. Increase. Gordon Moore, one of the founders of Intel, put forward the famous Moore's Law in 1965, that is, the number of transistors that can be accommodated on an integrated circuit will double every 18 months. This momentum has been maintained throughout the year. [0003] With the rapid development of integrated circuits, the technical nodes of integrated circuits have been reduced from micron and submicron to nanoscale, which puts forward higher and higher requirements for lithography t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027G03F7/20
CPCH01L21/0274G03F7/20
Inventor 伍广朋陆新宇
Owner ZHEJIANG UNIV