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Organic eutectic material and preparation method and application thereof

A eutectic material and organic technology, applied in the field of organic eutectic materials and their preparation, can solve the problems of cumbersome design structure and synthesis, affecting the application of semiconductor materials, hindering the rapid development of near-infrared phototransistors, and achieving low cost and crystallization The effect of good performance and good photoelectric performance

Active Publication Date: 2022-07-05
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, most of them use polymer semiconductors as the active layer to achieve near-infrared photoelectric response. The design structure and synthesis are cumbersome and complicated, which affects the application of semiconductor materials in near-infrared phototransistors and hinders the rapid development of near-infrared phototransistors.

Method used

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  • Organic eutectic material and preparation method and application thereof
  • Organic eutectic material and preparation method and application thereof
  • Organic eutectic material and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0043] A preparation method of an organic eutectic material, comprising the following steps:

[0044] Dissolve the donor molecule and the acceptor molecule in the solvent to obtain a mixed solution. The ratio of the donor molecule to the acceptor molecule is 1:1 according to the amount of the substance. The mixed solution is heated to 80°C with a heating table and heated. The temperature was kept constant for 3 hours until the donor molecule and the acceptor molecule were completely dissolved in the solvent, and the heating was stopped. Pipette 30 microliters of the mixed solution and add it dropwise to the silica side of the OTS-modified silicon wafer. The solvent is evaporated at room temperature of 20-25°C, and the thickness of 30-35nm is obtained on the silica side of the OTS-modified silicon wafer. The rod-shaped organic eutectic material, wherein the solvent is acetonitrile, and the concentration of the mixed solution is 1 mg / mL.

[0045] The donor molecule is 5,7-dihyd...

Embodiment 2

[0051] The organic eutectic material prepared in Example 1 is as follows figure 1 shown, which is 5,7-dihydro-indolo[2,3-B]carbazole-2,2'-(benzo[1,2-B:4,5-B']dithiophene- 4,8-Disubunit) Dimalononitrile (5,7-ICZ—DTTCNQ), organic eutectic material is formed by the self-assembly non-covalent bond of donor molecule and acceptor molecule, wherein, according to the amount of substance In parts, the ratio of donor molecules to acceptor molecules in the organic eutectic material is 1:1.

[0052] From single crystal X-ray diffraction analysis, it is concluded that the organic eutectic material is monoclinic, and the space group is C 1 2 / c 1 , the unit cell parameters of the organic eutectic material are: a=39.0513(7), b=7.11710(10), c=19.8653(3), α=90, β=90.130(2), γ=90.

[0053] figure 2 for 5,7-ICZ, DTTCNQ, and 5,7-ICZ—DTTCNQ ( figure 2 IDC) UV-Vis absorption spectrum in the solid state. Depend on figure 2It can be seen that the maximum absorption sideband peak of the orga...

Embodiment 3

[0055] In the application of the organic eutectic material in the field effect transistor in Example 1, the organic eutectic material is used as the organic semiconductor layer (active layer) in the field effect transistor. Field effect transistor structure such as image 3 As shown, the silicon layer in the OTS-modified silicon wafer is the gate electrode, the silicon dioxide layer of the OTS-modified silicon wafer is an insulating layer, and the insulating layer is an organic semiconductor layer ( image 3 The eutectic in the organic semiconductor layer is the source electrode and the drain electrode.

[0056] The method of preparing the source electrode and the drain electrode: paste a copper mesh as a mask on the OTS modified silicon wafer, and the vacuum degree is 10 in the evaporation chamber. -6 Under the conditions of torr and rate of 0.1 nm / s, gold was vapor-deposited on OTS-modified silicon wafers as source and drain electrodes (both with an aspect ratio of 8:1), an...

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Abstract

The invention discloses an organic eutectic material and a preparation method and application thereof.The organic eutectic material is formed by a donor molecule and an acceptor molecule through a self-assembly non-covalent bond, the donor molecule is 5, 7-dihydro-indolo [2, 3-B] carbazole, the acceptor molecule is 2, 2 '-(benzo [1, 2-B: 4, 5-B'] dithiophene-4, 8-disubunit) dimalononitrile, and the donor molecule is 5, 7-dihydro-indolo [2, 3-B] carbazole, the acceptor molecule is 2, 2 '-(benzo [1, 2-B: 4, 5-B') dithiophene-4, 8-disubunit) dimalononitrile. The ratio of the donor molecules to the acceptor molecules is 1: 1 according to the amount of substance. The near-infrared photoelectric response of the small organic molecule semiconductor material is realized in a eutectic engineering mode; wherein the organic eutectic material has the advantages of simplicity, convenience and high efficiency in preparation, low cost, good crystallinity and the like; customization of material and structural design can be realized through eutectic engineering, the organic small molecule semiconductor material with proper band gap and efficient charge transfer is prepared, and the organic small molecule semiconductor material shows good photoelectric properties when applied to near-infrared transistors.

Description

technical field [0001] The invention belongs to the technical field of organic optoelectronic semiconductors, and in particular relates to an organic eutectic material and a preparation method and application thereof. Background technique [0002] With the rapid development of organic semiconductor materials, they are commonly used as active layers in the fields of organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs), organic light-emitting transistors (OLETs), and near-infrared organic phototransistors (OPTs). Among them, near-infrared phototransistors have attracted the attention of researchers in many aspects such as nighttime visibility, health monitoring, and thermal efficiency analysis. At present, most of the near-infrared photoelectric responses are realized by using polymer semiconductors as the active layer. The design structure and synthesis are complicated and complicated, which affects the application of semiconductor materials in near...

Claims

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Application Information

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IPC IPC(8): C07D487/04C07D495/04H01L51/30H01L51/40
CPCC07D487/04C07D495/04C07B2200/13H10K71/15H10K71/12H10K85/6576H10K85/6572Y02E10/549
Inventor 张小涛李飞孙玲杰胡文平
Owner TIANJIN UNIV
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