Boron nitride filled heat conduction interface material and preparation method thereof

Abstract

The invention provides a boron nitride filled heat-conducting interface material. The boron nitride filled heat-conducting interface material comprises a filler framework and a silicon resin matrix, the filler framework is of a honeycomb network structure; the cellular network structure is formed by extending a mesh plane in the vertical direction; wherein the net-shaped plane is formed by periodically arranging a plurality of hollow regular hexagons; the silicon resin matrix comprises silicon resin, a chain extender, a cross-linking agent, a catalyst and an inhibitor; the silicon resin is double-sealed vinyl silicone oil from which all the first siloxane and more than half of the second siloxane are removed; wherein the first siloxane comprises siloxane with the number of silicon atoms being 3 to 20, and the second siloxane comprises siloxane with the number of silicon atoms being 20 to 50. According to the present invention, the heat can be uniformly and effectively dissipated in the 3D space, and the heat dissipation material has advantages of good mechanical property, good electrical insulating property, low hardness, high elongation, difficult volatilization and oil leakage, and good aging resistance.

Description

technical field [0001] The present application relates to the technical field of thermally conductive interface materials, in particular to a boron nitride filled thermally conductive interface material and a preparation method thereof. Background technique [0002] In the field of electronic information industry, electronic equipment will inevitably generate heat during operation. The reliability of electronic components decreases by 10% when the temperature of electronic components rises by 2°C; the service life at a temperature rise of 50°C is only 1% of that at a temperature rise of 25°C. / 6. With the rapid development of electronic technology, technological progress and market demand promote the development of electronic components in the direction of miniaturization, precision, high performance and intelligence, the integration degree and power density of electronic components are continuously improved, and the dissipation power density of electronic components and he...

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Problems solved by technology

[0004] However, due to the good chemical stability of boron nitride, it is not easy to form chemical bonds, and it is easy to agglomerate, so the affinity between boron nitride and the matrix material is poor, and it is difficult to mix evenly during the filling process.

In addition to poor dispersion, with the increase of boron nitride filling content, the high viscosity of the matrix material will make it unable to fully wet all the boron nitride powder, and powder falling and dry cracking may occur during processing

Also, during the assembly process, too high hardness of the thermal interface material may crush the chip, while too low elongation may cause the product itself to be crushed

In order to improve the sof

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