Method for producing composite structure comprising thin layer of monocrystalline SiC on carrier substrate of polycrystalline SiC

A carrier substrate and production method technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as low density, no expansion defects, adverse effects on power device performance and reliability, etc.

Pending Publication Date: 2022-07-12
S O I TEC SILICON ON INSULATOR THECHNOLOGIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] Regardless of the layer transfer technique employed, another problem arises to provide a composite structure comprising thin c-SiC layers of extremely high quality, more particularly free of extended defects (or with a very low density of such defects) problem, the extended defects may adversely affect the performance and reliability of power devices to be produced on the thin layer

Method used

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  • Method for producing composite structure comprising thin layer of monocrystalline SiC on carrier substrate of polycrystalline SiC
  • Method for producing composite structure comprising thin layer of monocrystalline SiC on carrier substrate of polycrystalline SiC
  • Method for producing composite structure comprising thin layer of monocrystalline SiC on carrier substrate of polycrystalline SiC

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Embodiment 1

[0096] According to one non-limiting exemplary embodiment, the initial substrate 11 provided in step a) of the production method is a wafer made of c-SiC, which is the 4H polytype, relative to axis has an orientation of 4.0°±0.5° and has a diameter of 150 mm and a thickness of 350 μm.

[0097] Before step b) of the epitaxial growth of the c-SiC donor layer 110, a conventional RCA cleaning procedure (Standard Clean 1 + Standard Clean 2) is carried out on the initial substrate 11, followed by Caroline acid (sulfuric acid and hydrogen peroxide mixture), followed by HF (hydrofluoric acid).

[0098] Growth using precursors such as monosilane (SiH4) and propane (C3H8) or ethylene (C2H4) in an epitaxial chamber at a temperature of 1650° C. produces a c-SiC donor layer 110 with a thickness of 30 μm (growth rate : 10 μm / hour). The BPD defect density of the donor layer is about 1 / cm 2 .

[0099] With 150keV energy and 6 E 16 H+ / cm 2 A dose of H ions is implanted through the free s...

Embodiment 2

[0106] According to one non-limiting exemplary embodiment, the initial substrate 11 provided in step a) of the production method is a wafer made of c-SiC, which is the 4H polytype, relative to axis has an orientation of 4.0°±0.5° and has a diameter of 150 mm and a thickness of 350 μm.

[0107] Before step b) of the epitaxial growth of the c-SiC donor layer 110, a conventional RCA cleaning procedure (Standard Clean 1 + Standard Clean 2) is carried out on the initial substrate 11, followed by Caroline acid (sulfuric acid and hydrogen peroxide mixture), followed by HF (hydrofluoric acid).

[0108] The conversion layer 13 is formed in the epitaxy chamber. Before starting the epitaxial growth of this layer 13 on the initial substrate 11, a hydrogen bake is carried out in the chamber at a temperature of 1700°C for a period of 10 to 20 minutes. Epitaxial growth of the conversion layer 13 of c-SiC is then carried out at a temperature of 1650°C using precursors such as monosilane (Si...

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Abstract

The invention relates to a method for producing a composite structure (1) comprising a thin layer (10) of monocrystalline silicon carbide on a carrier substrate (20) of silicon carbide. The method comprises: a) a step of providing an initial substrate (11) of monocrystalline silicon carbide, b) a step of epitaxially growing a donor layer (110) of monocrystalline silicon carbide on the initial substrate (11) to form a donor substrate (111), c) a step of ion implantation of a light species into the donor layer (110) to form a buried brittle surface (12) defining a thin layer (10), d) a step of forming a support substrate (20) of silicon carbide on the free surface of the donor layer (110), comprising deposition at a temperature of between 400 DEG C and 1100 DEG C, e) a step of separating along the buried brittle surface (12) to form the composite structure (1) and the remainder (111 ') of the donor substrate, f) a step of chemically-mechanically treating the composite structure (1).

Description

technical field [0001] The present invention relates to the field of semiconductor materials for use in microelectronic devices. The invention more particularly relates to a method for producing a composite structure comprising thin layers of monocrystalline silicon carbide on a carrier substrate of crystalline silicon carbide, in particular polycrystalline silicon carbide. Background technique [0002] Interest in silicon carbide (SiC) has grown in recent years because of the semiconductor material's ability to improve its ability to handle energy. SiC is being used more and more widely in the production of new power devices to meet the evolving needs of the electronics sector, for example, especially in the field of electric vehicles. [0003] Compared to traditional silicon power devices and integrated power systems, single-crystal silicon carbide-based power devices and integrated power systems are able to manage higher power densities with smaller active area sizes. T...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/324H01L21/04H01L21/762
CPCH01L21/02378H01L21/02529H01L21/0262H01L21/02447H01L21/02433H01L21/02658H01L21/76254H01L21/02002C23C16/325C30B25/20C30B29/36C30B31/22C30B33/10H01L21/02079H01L21/02628H01L21/7813
Inventor I·拉杜H·比亚德C·马勒维尔E·吉奥特D·朗德吕
Owner S O I TEC SILICON ON INSULATOR THECHNOLOGIES
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