Carbazole fused ring substituted triazine compound and application thereof
A compound and triazine technology, which is applied in the field of triazine compounds substituted by fused rings of carbazole, can solve the problems of device efficiency roll-off, hole and electron imbalance in the light-emitting layer, etc., and achieve low degree of efficiency roll-off and improved Effect of improving electron mobility and high temperature stability
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Embodiment 1-1
[0063] Example 1-1: Synthesis of Compound 2:
[0064]
[0065] Add 0.02mol of raw material A-1 and 0.024mol of intermediate B-1 to 150mL of toluene:ethanol=2:1 mixed solvent, add 15mL of 3mol / L potassium carbonate aqueous solution, add 0.0004mol Pd after deoxygenation (PPh 3 ) 4 , heated to 110 ℃ under nitrogen atmosphere, reacted for 48 hours, sampled plate, after the reaction of raw material A-1 was completed, cooled, filtered, the filtrate was rotary evaporated to remove the solvent, and the crude product was passed through a silica gel column to obtain compound 2;
[0066] The preparation process of Example 1-1 was repeated to synthesize the following target compound; the reaction conditions were the same, except that Intermediate B and Raw Material A listed in Table 1 below were used;
[0067] Table 1
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[0072] The synthetic route of intermediate B is as follows:
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[0074] Synthesis of Intermediate D-1:
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Embodiment 1
[0098] like figure 1 As shown, the transparent substrate layer 1 is a transparent PI film, and the anode layer 2 (ITO(15nm) / Ag(150nm) / ITO(15nm)) is cleaned, that is, cleaning agent cleaning (SemiClean M-L20), pure water Washing, drying, and UV-ozone washing to remove organic residues from the surface of the anode layer. On the anode layer 2 after the above-mentioned washing, HT-1 and P-1 were vapor-deposited as the hole injection layer 3 using a vacuum evaporation device, the film thickness was 10 nm, and the mass ratio of HT-1 and P-1 was 97:3. Next, HT-1 was vapor-deposited as the hole transport layer 4 with a thickness of 130 nm. Subsequently, EB-1 was evaporated as the electron blocking layer 5 with a thickness of 40 nm. After the above-mentioned electron blocking layer material is evaporated, the light-emitting layer 6 of the OLED light-emitting device is fabricated, and its structure includes compound 2 and GH-1 used in the OLED light-emitting layer 6 as host material...
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