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Method for producing P-type III nitride material

A manufacturing method and nitride technology, which are applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high P-type resistivity, low hole concentration, and high ionization energy of magnesium impurities, and improve quantum efficiency. , the effect of improving injection efficiency and reducing series resistance

Inactive Publication Date: 2006-10-11
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] At present, gallium nitride (GaN) light-emitting diodes have been partially industrialized, but there are still the following problems: the hole concentration of P-type GaN-based compounds is low, and the P-type resistivity is high
However, the ionization energy of magnesium impurities is as high as 150meV, and the activation rate is only about 1%.

Method used

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  • Method for producing P-type III nitride material
  • Method for producing P-type III nitride material
  • Method for producing P-type III nitride material

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Experimental program
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Effect test

Embodiment 1

[0026] Such as figure 2 As shown, a fabrication method of a III-nitride laser comprises the following processes:

[0027] 1. See figure 1 , using (0001) facet sapphire (C-Al 2 o 3 )1 as the substrate.

[0028] 2. Epitaxially grow a layer of N-type gallium nitride 2 on the (0001) plane sapphire substrate, the growth temperature is 1000-1100° C., and the thickness is 0.5-4 microns.

[0029] 3. A layer of N-type AlGaN 3 is grown as a carrier confinement layer. The growth temperature is 1050-1100°C, and the thickness is 0.5-1 micron.

[0030] 4. Growing the active layer 4 of the light emitting device. The active layer can adopt different structures such as quantum dots and quantum wells.

[0031] 5. Then grow a P-type AlGaN layer 5 again. The growth temperature is 1000-1100°C, and the thickness is 0.1-1 micron.

[0032] 6. Cover another layer of P-type quaternary nitride layer 6 on it. The growth temperature is 1000-1100°C, and the thickness is 0.1-2 microns. The growt...

Embodiment 2

[0038] Such as image 3 As shown, a manufacturing method of a heterojunction bipolar transistor includes the following processes:

[0039] 1. Using (0001) surface sapphire (C-Al 2 o 3 )1 as the substrate.

[0040]2. Epitaxial growth of a layer of high concentration N + Type gallium nitride 2, the growth temperature is 1000-1100°C, the thickness is 0.5-4 microns, and silicon is used as the N-type impurity. This layer acts as an ohmic contact layer.

[0041] 3. A layer of N-type gallium nitride 3 is grown on it, the growth temperature is 1050-1100°C, and the thickness is 0.5-1 micron.

[0042] 4. Growing a layer 4 of an N-type aluminum gallium nitride (AlGaN) layer. The growth temperature is 1050-1100°C, and the thickness is 0.5-1 micron.

[0043] 5. Then grow a P-type gallium nitride layer 5 again. The growth temperature is 1000-1100°C, and the thickness is 0.1-1 micron. Mg was used as a dopant.

[0044] 6. Cover another layer of P-type quaternary nitride layer 6 on i...

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Abstract

A method for making a P-type III-nitride material, which is used to make a P-type conductive layer of an optoelectronic device. By changing the composition, the forbidden band width of the quaternary nitride is lower than the width of gallium nitride, thereby increasing the P-type impurity The ionization rate makes the P-type III-nitride material obtain a high hole concentration at the same doping level, and reduces the resistivity, so that the injection efficiency (ratio) can be improved by increasing the carrier concentration, so that The quantum efficiency in the device is improved, and the luminous intensity is improved.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor material, in particular to a method for manufacturing a P-type Group III nitride material. Background technique [0002] Blue-green light-emitting diodes are widely used in the fields of display, control and communication. Ultra-high brightness blue and green light-emitting diodes meet the current needs of full-color display and traffic signal signs and become indispensable components. Blu-ray laser diodes are used in high-density storage discs to increase the storage density by nearly four times compared with red-light laser diodes, which better meets the needs of the information age. In addition, blue laser diodes also have great application value in high-performance laser printing, medical diagnosis, submarine exploration and communication. [0003] Gallium Nitride (GaN), Indium Nitride (InN) and Aluminum Nitride (AlN) and their alloys are all direct bandgap materials, which are us...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20
Inventor 王向武
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD