Check patentability & draft patents in minutes with Patsnap Eureka AI!

A method for making metal induced polysilicon film having diffuse layer above metal

A polysilicon film, metal-induced technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of poor polysilicon film uniformity, affecting device performance, difficulties, etc., to improve repeatability and improve operability , the effect of enhanced controllability

Inactive Publication Date: 2007-08-08
JILIN UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Excimer laser annealing method can be used to obtain polysilicon film with high mobility and small surface roughness, but the device is expensive, and the uniformity of the polysilicon film is poor; the use of metal induction technology can obtain good uniformity, migration Polysilicon film with high efficiency and flat surface, and the production process and equipment are relatively simple
However, there are still some problems in this method at present. For example, after the crystallization is completed, the residual metal in the channel will pollute the channel, thereby affecting the performance of the device; Generally, the induced metal layer is made very thin, even thinner than an atomic layer, which makes the process difficult to control and repeat, and increases the process cost. Difficulty in achieving
Metal Induced Lateral Crystallization (MILC, Metal Induced Lateral Crystallization) developed in recent years, such as the document "Lowtemperature poiy-Si thin film transistor fabrication by metal-induced lateral crystallization, Seok-Woon Lee and Seung-Ki Joo, IEEE ElectronDevice Letter, 1996 , Vo117, pp160", although this technology can achieve the problem of reducing residual metal pollution, the process is also very complicated, and it still cannot completely avoid the direct contact between the metal layer and the semiconductor layer, and there are still problems between MIC and MILC and between the two The grain boundary left when the MILCs in two directions meet in the middle, and the existence of the grain boundary affects the breakdown voltage and leakage current of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for making metal induced polysilicon film having diffuse layer above metal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] The process scheme in this example is shown in Figure 1.

[0019] In the first step, at first on the flat glass substrate 10, a-Si thin film 11 is deposited by PECVD method, its thickness is 60nm, and SiH 4 Decompose as a gas source to obtain a-Si. The substrate temperature during deposition was 200°C, and the background vacuum was 2×10 -4 Pa, the reaction chamber pressure is 80Pa. Before use, the flat glass substrate 10 is ultrasonically cleaned with organic solvents such as toluene, acetone, and ethanol;

[0020] The second step is to deposit a SiNx layer with a thickness of 50nm on the a-Si film 11 as the metal isolation layer 12. The growth of this layer of film also utilizes PECVD on SiH 4 and NH 3 grow under a mixed atmosphere, the substrate temperature is kept at 270°C, and the reaction chamber pressure is 30Pa;

[0021] In the third step, the sample is then placed in a magnetron sputtering station to grow a layer of induced metal 13 with a thickness of 1nm....

Embodiment 2

[0026] The process scheme in this example is shown in Figure 1.

[0027] First covered with 400nmSiO 2 Adopt PECVD method to deposit a-Si thin film 11 on the silicon wafer of insulating layer, its thickness is 200nm, with SiH 4 Decompose as a gas source to obtain a-Si. The substrate temperature during deposition was 200°C, and the background vacuum was 2×10 -4 Pa, the reaction chamber pressure is 80Pa. Before use, the pair was covered with 400nmSiO 2 The silicon wafer 10 of the insulating layer is ultrasonically cleaned with organic solvents such as toluene, acetone, and ethanol;

[0028] The second step is to deposit a layer of SiNx layer with a thickness of 100nm on the a-Si film 11 as the metal isolation layer 12. The growth of this layer of film also utilizes PECVD on SiH 4 and NH 3 grow under a mixed atmosphere, the substrate temperature is kept at 270°C, and the reaction chamber pressure is 30Pa;

[0029] In the third step, the sample is then placed in a magnetron...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a manufacture method for metal induced polysilicon film with diffusion layer, comprising sediment of amorphous silicon film (11) on isolated substrate (10) , sediment of metal isolation layer (12) on amorphous silicon film (11) , a layer of induced metal layer (13), a layer of sediment on induced metal layer (13) as diffusion dielectric layer (14) on metal, using low temperature(<600 deg.C) annealing to realize crystallization of amorphous silicon to polysilicon, using corrasion technique to clear away metal diffusion dielectric layer (14) , induced metal layer (13) and metal isolation layer (12) . Using the method of the invention, can adjust the quality of metal atom which enters amorphous silicon layer to acquire polysilicon film with large crystal grain, at the same time, avoid pollution of remained metal since metal and silicon layer not touch each other, in addition, increase width of induced metal layer (13) to raise operability and repeatability of technique.

Description

technical field [0001] The invention relates to a manufacturing method of low-temperature polysilicon film, in particular to an improved manufacturing method of using metal to induce crystallization of amorphous silicon to obtain high-quality polysilicon, which is also a semiconductor processing technology carried out at low temperature. Background technique [0002] As we all know, polysilicon thin films are now widely used in the manufacture of semiconductor devices, such as polysilicon thin film transistors (TFT, Thin Film Transistor) used in the display industry, micro-electromechanical systems, integrated circuits, and alternative SOI (Silicon on Insulator) materials, etc. aspect. Among them, in the display industry, especially in AMOLED (Active Matrix Organic Light-emitting Device, active organic light-emitting device), TFT-LCD (TFT liquid crystal display device) products, in order to improve the performance of the display screen, usually use TFT to form an image Most...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
Inventor 李传南王丽杰张彤赵毅侯晶莹刘式墉
Owner JILIN UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com