Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Vapor reaction preparation process of continuous ion layer in polyelement sulfide film

A photoelectric thin film, continuous ion technology, applied in photovoltaic power generation, sustainable manufacturing/processing, circuits, etc., can solve the problems of toxic solvent price, thin film deviation from ideal stoichiometry, low thin film growth rate, etc., to achieve cheap mass production, Easy to recycle and less consumables

Inactive Publication Date: 2005-07-13
TIANJIN UNIV
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the shortcomings in the preparation of chalcogenide photoelectric thin films by ILGAR method are: (1) the use of the same concentration of cation precursor solution will easily cause the film composition to deviate from the ideal stoichiometry; (2) CH 3 CN and CH 3 CH 2 OOH solvent is poisonous and expensive; (3) the separation and pulling method is adopted, and the film growth rate is low
(4) There is no report on the preparation of multiple (>3) chalcogenide photoelectric thin films by ILGAR method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Raw materials

[0022] The specific process of ILGAR method is as follows:

[0023] 1) Preparation of precursor solution:

[0024] a. Weighing: According to the different concentration ratio requirements in the above table, weigh the CuCl of different substances. 2 , InCl 3 ;

[0025] b. Preparation of mixed cation precursor solution: weighed CuCl and InCl 3 Soluble in C 2 H 5 Prepare 50 mL of cationic precursor solution in OH, add 5-10 drops of hydrochloric acid solution to adjust the pH to 4.5, and stir to completely dissolve;

[0026] c. Put the prepared solution in a beaker, let it stand, and filter for later use.

[0027] 2) Coating

[0028] a. The substrate is immersed in the mixed cationic precursor solution for surface adsorption for 15 seconds, and then pulled to form a film at a speed of 5 cm / min;

[0029] b. Access N 2 Air drying for 10 seconds, the flow rate is 20ml / min;

[0030] c. Access H at room temperature 2 S gas undergoes vulcanization reaction ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses the vapor reaction preparation process of continuous ion layer in polyelement sulfide film of film solar cell. Polyelement semiconductor photoelectronic sulfide film of CuInS2, Cu(In, Ga)S2, etc. with stable performance and controllable composition is prepared with CH3CH2OH, rather than CH3CN, as solvent and H2S as sulfur source, and through one-step fluidizing process, rather than two-step fluidizing process. The film is used in assembling film solar cell with low cost and high photoelectronic efficiency. The cation precursor so of the present invention consists of CuCl2, GaCl3 and InCl3 in the weight ratio of 0.25:0:0.37 to 0.47:0.22:0.73. The present invention has the film prepared at room temperature and through filming and heat treatment.

Description

Technical field [0001] The present invention relates to a preparation method of a multi-element chalcogen photoelectric film of a thin film solar cell, in particular to a preparation method of a continuous ion layer gas phase reaction of a multi-element chalcogen photoelectric film. Background technique [0002] With the rapid development of modern economy, energy and environmental issues are currently the two main issues facing mankind. Conventional energy sources such as coal, oil, and natural gas are bound to face severe shortages due to their non-renewable nature. In addition, the environmental pollution and greenhouse gas emissions caused by the consumption of conventional energy have caused the global climate to continue to deteriorate. Therefore, various countries have begun to formulate corresponding policies to strengthen the research and development of green and renewable energy. Because of its inexhaustible, inexhaustible, safe, reliable,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/36H01L31/04H01L31/18
CPCY02E10/50Y02P70/50
Inventor 靳正国邱继军
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com