Chemical vapor deposition film formed by plasma cvd process and method for forming same
A technology of plasma and vapor deposition, which is applied in the direction of gaseous chemical plating, devices and containers for coating liquid on the surface, and can solve the problems such as the reduction of gas isolation
Inactive Publication Date: 2006-06-28
TOYO SEIKAN KAISHA LTD
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Problems solved by technology
[0013] Furthermore, although the traditional evaporated film formed according to the above-mentioned method has excellent barrier properties to various gases (such as oxygen), due to its high moisture permeability, moisture can penetrate into the evaporated film, thereby reducing its gas barrier properties. This is also its shortcoming, especially in the field of packaging materials, people are asking for improvement of this performance
Method used
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Examples
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Effect test
Embodiment 1
[0126] After performing the pre-, main, and post-evaporation under the conditions shown in Table 1, a vapor deposition bottle that showed good performance in any evaluation as shown in Table 1 was obtained.
Embodiment 2
[0128] After performing the pre-, main, and post-evaporation under the conditions shown in Table 1, a vapor deposition bottle that showed good performance in any evaluation as shown in Table 1 was obtained.
Embodiment 3
[0130] After performing the pre-, main, and post-evaporation under the conditions shown in Table 1, the vapor-deposition bottle having a very satisfactory performance as a product was obtained although its moisture barrier property was slightly worse than that of Example 1 and Example 2.
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Abstract
A method of forming a vapor-deposited film by holding a substrate to be treated in a plasma processing chamber, and supplying an organosilicon compound and an oxidizing gas into the processing chamber to perform chemical plasma treatment to form a silicon oxide on the surface of a substrate. In this method, the vapor-deposited film is formed by maintaining a constant supply amount of the organosilicon compound gas in the plasma processing chamber and changing the supply amount of the oxidizing gas during the film-forming process for preparing the vapor-deposited film. It is a chemical vapor deposition film with excellent compatibility, flexibility, flexibility, oxygen barrier properties and moisture barrier properties.
Description
Technical field [0001] The present invention relates to a method for forming a vapor-deposited film containing a metal oxide such as silicon oxide on the surface of a base material such as a plastic substrate by using a plasma CVD method, and the vapor-deposited film formed by the method. Background technique [0002] Chemical vapor deposition (CVD) is a technology that uses a raw material gas that does not react at room temperature to deposit a film-like reaction product on the surface of the substrate by vapor growth in a high-temperature atmosphere. Technologies widely used in semiconductor manufacturing, metal or ceramic surface modification, etc., are recently being used for surface modification of plastic containers, especially to improve gas barrier properties. [0003] Plasma CVD is a technology that uses plasma to grow thin films. It basically includes the following steps. That is, under reduced pressure, the electric energy formed by a strong electric field is used to d...
Claims
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IPC IPC(8): B65D23/02C23C16/40B05D3/10B65D1/00C08J7/04C23C16/42
Inventor 小林亮并木恒久细野宽子仓岛秀夫稻垣肇家木敏秀
Owner TOYO SEIKAN KAISHA LTD