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Production of optical thin-membrane with samarium sulfide holographic recording

A technology of optical thin film and holographic recording, which is applied in chemical instruments and methods, optics, inorganic chemistry, etc., and can solve problems such as difficult control of the process

Inactive Publication Date: 2006-08-16
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, it must have appropriate vapor pressure and appropriate thermal decomposition temperature, and the process is not easy to control

Method used

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  • Production of optical thin-membrane with samarium sulfide holographic recording
  • Production of optical thin-membrane with samarium sulfide holographic recording

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] Example 1: Passing Ar gas into deionized water to remove O in water 2 , then, analytically pure samarium chloride SmCl 3 ·6H 2 O and sodium thiosulfate Na 2 S 2 o 3 ·5H 2 O was respectively dissolved in deionized water fed with Ar gas to prepare a solution with a concentration of 0.05 mol / L; the two solutions were mixed at a volume ratio of 1:4, and the silicon wafer was used in a KQ-50E ultrasonic cleaner. Wash with acetone and ethanol, then rinse with deionized water, put platinum wire as anode and silicon chip as cathode into the above mixed solution, use WJJT15003D DC stabilized current power supply with 2mA current and 10V voltage for electrodeposition For 1 hour, adjust the pH value of the mixed solution to 3.5 with 3.6% dilute hydrochloric acid solution; take the silicon chip out of the solution, soak it in deionized water twice, and dry it in an oven at 40°C after taking it out to obtain vulcanization Samarium film. see figure 1 , the obtained thin film ...

Embodiment 2

[0012] Example 2: Passing Ar gas into deionized water to remove O in water 2 , then, analytically pure samarium chloride SmCl 3 ·6H 2 O and sodium thiosulfate Na 2 S 2 o 3 ·5H 2 O was respectively dissolved in deionized water fed with Ar gas to prepare a solution with a concentration of 0.07mol / L; the two solutions were mixed at a volume ratio of 1:3, and the silicon wafer was used in a KQ-50E ultrasonic cleaner. Wash with acetone and ethanol, and then rinse with deionized water. Put platinum wire as anode and silicon chip as cathode into the above mixed solution, and use WJJT15003D DC stabilized current power supply to electrodeposit with a current of 4mA and a voltage of 20V. For 2 hours, adjust the pH value of the mixed solution to 5.5 with 3.6% dilute hydrochloric acid solution; take the silicon chip out of the solution, soak it in deionized water twice, and dry it in an oven at 20°C after taking it out to obtain vulcanization Samarium film.

Embodiment 3

[0013] Example 3: Passing Ar gas into deionized water to remove O in water 2 , then, analytically pure samarium chloride SmCl 3 ·6H 2 O and sodium thiosulfate Na 2 S 2 o 3 ·5H 2 O was respectively dissolved in deionized water fed with Ar gas to prepare a solution with a concentration of 0.08mol / L; the two solutions were mixed at a volume ratio of 2:1, and the silicon wafer was used in a KQ-50E ultrasonic cleaner. Wash with acetone and ethanol, and then rinse with deionized water. Put platinum wire as anode and silicon chip as cathode into the above mixed solution, and use WJJT15003D DC stabilized current power supply with a current of 6mA and a voltage of 13V for electrodeposition. For 3 hours, at the same time adjust the pH value of the mixed solution to 4.5 with 3.6% dilute hydrochloric acid solution; take the silicon chip out of the solution, soak it in deionized water twice, and dry it in an oven at 30°C after taking it out to obtain vulcanization Samarium film. see...

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Abstract

A method for preparing holographic record optical film of samarium sulfide includes leading Ar gas in deionized water to remove O2 off from water, solving analysis samarium chloride and sodium thiosulphate separately in solution with concentration of 0.05-0.1 mol / L, mixing two solutions and placing Pt wire as anode and silicon wafer as cathode in mixed solution, applying 2-9 mA current and 10-20V voltage for electric-depositing of 2.5-5.5 hr. taking silicon wafer out and dipping it in deionized water twice drying it at temperature of 20-40deg.c for obtaining samarium sulfide film .

Description

technical field [0001] The invention relates to a preparation method of an optical thin film, in particular to a preparation method of a samarium sulfide holographic recording optical thin film. Background technique [0002] Samarium sulfide is a phase change material, which is a black semiconductor phase at room temperature, and can undergo a phase change into a metal phase under pressure, accompanied by a color change. This phase transition can also be induced by heat treatment, laser induction, and the like. Due to the obvious difference in the optical properties of its two phases, samarium sulfide thin films can be used for holographic recording and storage, optical switches, making micro strain gauges and optical digital storage, etc. [0003] At present, the methods for preparing samarium sulfide films at home and abroad mainly include: sputtering method, evaporation method, laser pulse deposition method and metal-organic chemical vapor deposition method. Sputtering ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B1/00C01F17/00
Inventor 黄剑锋马小波曹丽云吴建鹏
Owner SHAANXI UNIV OF SCI & TECH
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