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Polishing composition and use thereof

a technology of polishing composition and composition, applied in the field of aqueous chemical formulation, can solve the problems of limited shelf life of products and great challenge of chemical mechanical planarization, and achieve the effects of good planarity, excellent colloidal stability, and absence of corrosion

Inactive Publication Date: 2005-04-14
VERSUM MATERIALS US LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0008] The present invention provides slurry compositions that are suitable for CMP. Compositions of the present invention make possible effective removal of metallic layer including those used in MRAM devices as discussed above in a minimum number of steps while assuring good planarity, absence of corrosion and excellent colloidal stability for the abrasive particles in the slurry.

Problems solved by technology

Use of multiple metallization layers which differ greatly in chemical and mechanical properties pose a great challenge for chemical mechanical planarization.
The two components and typically keep separate until time of use due to the fact that the oxidizer would react with the other components over time, placing a limitation on the shelf life of the product.

Method used

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  • Polishing composition and use thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0046] The following composition is made by missing the following components in the concentrations listed bellowed. The pH of the slurry is 2.5:

Concentrations in ppmPoliEdge 2001 silica128571Benzotriazole6500Tetrabutyl ammonium hydroxide4000Phosphoric acid4488Deionized waterBalance

[0047] To this slurry, hydrogen peroxide is added as an oxidizer to oxidize the metallic layers to be polished. Dilution for polishing is 70 parts by volume of slurry: 29 parts by volume of deionized water: 1 part by volume of 30% hydrogen peroxide.

[0048] Polishing is performed on a IPEC 472 CMP tool. The polishing parameters are: [0049] Pressure: 3 psi [0050] Platen Speed: 90 RPM [0051] Carrier Speed: 30 RPM [0052] Back-pressure: 2 psi [0053] Slurry Flow rate: 200 ml / min [0054] Polish Pad: k-grooved IC 1000 [0055] Polish time: 60 seconds

[0056] The removal rates of the metal films are calculated based on the changes in thickness upon polishing as measured by sheet resistance measurement technique with ...

example 2

[0059] A 8″ patterned wafer containing 9000A deep trenches patterned inside a TEOS dielectric. The trenches are filled with a metallization stack consisting of 200 A Ta / 100A Ru / 250A NiFe / 100A Ru / 9000A Cu. The copper film deposited on the regions outside the trenches is first removed using a copper CMP process using a slurry with Cu:Ta removal rate selectivity of more than 100. This results in a wafer with copper restricted to the trenches. The remaining wafer is still covered with the Ta / Ru / NiFe / Ru metallization layer. The slurry described in example 1 along with the hydrogen peroxide dilution also described in example 1 is used to remove these metallic layers. CMP polish parameters except for the polish time are identical as in example 1.

[0060] The following table tabulates the dishing topography for 100 micron lines for wafers polished at different stages. This topography is measured using VEECO AFP. After the initial 45 seconds, the wafer is mostly free from all the metallic lay...

example 3

[0062] Electrochemical polarization characteristics of different film types in the slurry described in example 1 and diluted with hydrogen peroxide as shown in example 1 are measured using EG&G M263 potentiostate / galvanostat controlled by SofetcorrII corrosion software. The Scan rate is 0.25 mV / s. FIG. 1 show the Electrochemical polarization curves.

[0063] The electrochemical polarization curves in the FIGURE show that the copper corrosion potential in the slurry mixed diluted as described in example 1 is anodic with respect to ruthenium and Fe—Ni alloy. So in case of a galvanic coupling formed between copper and any of these materials, copper will be thermodynamically favored to be protected. This would result in superior corrosion protection for copper lines / structures.

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Abstract

An acidic aqueous slurry composition comprising silica abrasive particles, an oxidizer, a quaternary ammonium hydroxide; and acid having a maximum pKa of about 2.5; and water is provided along with its use for polishing.

Description

TECHNICAL FIELD [0001] The present invention relates to an aqueous chemical formulation that is especially useful for polishing or planarizing a surface. The present invention is especially useful for polishing or planarizing metals such as those used as interconnect structures in integrated circuit devices such as semiconductor wafers containing copper damascene and dual damascene feature. BACKGROUND OF THE INVENTION [0002] On VLSI and ULSI semiconductor chips, Al and alloys of Al are used for conventional chip interconnect / wiring material. However, more recently copper and alloys of copper have been developed as chip interconnects material. The use of copper and copper alloys results in improved device performance when compared to Al and its alloys. [0003] By way of example, various new memory technologies are currently under development. Particularly important are the non-volatile memory devices which would allow the devices to retain the memory even after the power is switched-o...

Claims

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Application Information

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IPC IPC(8): B24B37/00C09G1/02C09K3/14C23F3/00H01L21/304H01L21/321
CPCC09G1/02H01L21/3212C23F3/00C09K3/1463
Inventor TAMBOLI, DYNANESHHYMES, STEPHEN W.BANERJEE, GAUTAM
Owner VERSUM MATERIALS US LLC
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