Resist polymer and method for producing the polymer

a polymer and resist technology, applied in the field of resist polymer, can solve the problems of difficult control of temperature-rising rate, difference in amount of generated radical species, and variation in lot-to-lot molecular weight distribution, and achieve excellent solubility and storage stability, and high polymer

Inactive Publication Date: 2005-12-29
YAMAGISHI TAKANORI +4
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0043] The present invention has been completed against the above background, and the objective thereof is to provide a resist polymer which is small in lot-to-lot, reactor-to-reactor, and scale-to-scale var...

Problems solved by technology

However, in the batch polymerization method, it is difficult to control a temperature-rising rate constantly at all times. Therefore, there has been a drawback that difference in amount of generated radical species occurs at a stage of temperature-rising due to subtle variations in the temperature-rising rate and causes lot-to-lot variations in molecular weight distribution.
In addition, in the case of batch polymerization method, even if the same temperature-rising rate is reproduced, there has been a drawback that difference of a radical concentration occurs in the temperature-rising process due to batch-to-batch variations in amount of dissolved oxygen, because a trace quantity of radical generated by partial decomposition of the polymerization initiator in the temperature-rising process is trapped by dissolved oxygen in the polymerization solvent.
Additionally, since there is a period of a low radical concentration and a high monomer concentration in the temperature-rising process in the batch polymerization method, there has been a problem that a trace amount of a high molecular weight component (high polymer) with molecular weight of 100,000 or more generates.
Ho...

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

Production of Copolymer 1

[0092] A monomer solution was prepared by placing 4800 g of methyl ethyl ketone (hereinafter inscribed as “MEK”) in a tank kept at a nitrogen atmosphere, and dissolving 2080 g of 5-acryloyloxy-2,6-norbornanecarbolactone (hereinafter inscribed as “NLA”) as a repeat unit (B) having a polar group for enhancing adhesion to a semiconductor substrate {hereinafter (B) on a head of the compounds in the examples has the same meaning as this} and 2480 g of 2-ethyl-2-adamantyl methacrylate (hereinafter inscribed as “EAM”) as a repeat unit (A) which is decomposed by an acid to become alkali soluble (hereinafter (A) on a head in the compounds in the examples has the same meaning as this). A polymerization initiator was prepared by placing 700 g of MEK and 80 g of azobisisobutyronitrile (hereinafter inscribed as “AIBN”) in another container kept at a nitrogen atmosphere and dissolving. Into a polymerization tank kept at the nitrogen atmosphere, 3500 g of MEK was put and...

example 2

Production of Copolymer 2 (1)

[0093] A monomer solution was prepared by placing 8000 g of MEK in a tank kept at a nitrogen atmosphere and dissolving 2080 g of (B) NLA, 2480 g of (A) EAM and 2220 g of 3-hydroxy-1-adamantyl acrylate (hereinafter inscribed as “HAA”). Also, a polymerization initiator was prepared by placing and dissolving 1000 g of MEK and 110 g of AIBN in another container kept at the nitrogen atmosphere. Into a polymerization tank kept at the nitrogen atmosphere, 5000 g of MEK was put and the temperature was raised to 80° C. with stirring. Subsequently, the monomer solution and the polymerization initiator solution kept at the temperature of 25 to 30° C. were fed into the polymerization tank kept at 80° C. over 4 hours, respectively. After the completion of feed, the polymerized solution was matured for 2 hours with keeping the polymerization temperature at 80° C., then cooled to room temperature and taken out. Polymer was precipitated from the resulting polymerized ...

example 3

Production of Copolymer 3 (1)

[0094] A monomer solution was prepared by placing 7000 g of MEK in a tank kept at a nitrogen atmosphere and dissolving 2220 g of (B) 5-methacryloyloxy-2,6-norbornanecarbolactone (hereinafter inscribed as “NLM”), 2480 g of EAM and 90 g of methacrylic acid. Also, a polymerization initiator was prepared by placing and dissolving,700 g of MEK and 80 g of AIBN in another container kept at the nitrogen atmosphere. Into a polymerization tank kept at the nitrogen atmosphere, 3300 g of MEK was put and the temperature was raised to 80° C. with stirring. Subsequently, the monomer solution and the polymerization initiator solution kept at the temperature of 25 to 30° C. were fed into the polymerization tank kept at 80° C. over 4 hours, respectively. After the completion of feed, the polymerized solution was matured for 2 hours with keeping the polymerization temperature at 80° C., then cooled to room temperature and taken out. Polymer was precipitated from the res...

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PUM

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Abstract

Solving problems in the prior art, provided are a resist polymer which is small in lot-to-lot, reactor-to-reactor and scale-to-scale variations, and contains no high polymer, is excellent in solubility and storage stability, and is suitable for fine pattern formation, and a method for production thereof. The present invention provides the resist polymer at least having a repeating unit having a structure which is decomposed by an acid to become soluble in an alkali developer and a repeating unit having a polar group to enhance adhesion to a substrate, characterized in that a peak area of a high molecular weight component (high polymer) with molecular weight of 100,000 or more is 0.1% or less based on an entire peak area in a molecular weight distribution determined by gel permeation chromatography (GPC).

Description

RELATED APPLICATIONS [0001] This application is a Division of U.S. patent application Ser. No. 10 / 775,695, filed Feb. 10, 2004 entitled RESIST POLYMER AND METHOD FOR PRODUCING THE RESIST POLYMER. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a resist polymer used for the production of semiconductors and a method for the production thereof. More particularly, the present invention relates to the resist polymer, which is suitable for microfabrication using various radiations such as far ultraviolet ray, X-ray and electron beam, and excellent in storage stability, and the method for production thereof. [0004] 2. Description of Related Art [0005] In semiconductor lithography, the formation of finer patterns has been required in conjunction with increase of integration degree. It is essential for micropatterning techniques to make a wavelength of light source shorter. Currently, the lithography by krypton fluoride. (KrF) excimer lase...

Claims

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Application Information

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IPC IPC(8): C08F2/00G03F7/004G03F7/039G03F7/085
CPCG03F7/085G03F7/0397F16L55/00F16L3/10
Inventor YAMAGISHI, TAKANORIOIKAWA, TOMOKATO, ICHIROMIZUNO, KAZUHIKOYAMAGUCHI, SATOSHI
Owner YAMAGISHI TAKANORI
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