Organic semicounductor device, process for producing the same, and organic semiconductor apparatus

a semi-counductor and organic semiconductor technology, applied in the direction of semiconductor/solid-state device details, solid-state devices, transistors, etc., can solve the problems of insufficient orientation of crystals of organic semiconductors, difficult to produce a substrate with a large area, and less versatility, and achieve the effect of low cos

Inactive Publication Date: 2005-12-29
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0013] The present invention provides a device structure of a high-performance organic TFT and a process for producing the high-perform...

Problems solved by technology

However, since solid PTFE is slided at a constant pressure to form the PTFE film, it is difficult to produce a substrate with a large area.
However, this method can be applied to only a surface having a basic functional group such as silicon oxide, and is therefore less versatile.
However, it is considered that, in this method, crystals of the organic semiconductor are not sufficient...

Method used

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  • Organic semicounductor device, process for producing the same, and organic semiconductor apparatus
  • Organic semicounductor device, process for producing the same, and organic semiconductor apparatus
  • Organic semicounductor device, process for producing the same, and organic semiconductor apparatus

Examples

Experimental program
Comparison scheme
Effect test

synthetic example 1

[0063] An example of synthesis of a copolymer of methyl methacrylate and divinylbenzene used in the organic semiconductor device of the present invention is shown in the following reaction formula (1).

[0064] A mixed solution of methyl methacrylate, divinylbenzene and a polymerization initiator was dropped in a reflux of toluene at a reflux temperature of toluene (110° C. to 120° C.). The mixture was then cooled to 80° C., and maintained at that temperature for three hours. After allowing to be cooled, the mixture was reprecipitated in methanol. After decanting the supernatant and washing the precipitate with methanol, the precipitate was filtered. The filtrate was dried by heating under reduced pressure to obtain the target polymer.

[0065] From the results of analyzing the 1H-NMR spectrum of the resulting polymer (using a 1H-NMR analyzer manufactured by JEOL Ltd., resonant frequency: 400 MHz, solvent: CDCl3, external reference material: TMS, measured at room temperature), the copo...

example 1

[0067] A polyimide substrate was used in this example. Upilon (trade name) manufactured by Ube Industries, Ltd. with a thickness of 125 μm was used as the substrate.

[0068] Next, copper was formed as a film by sputtering, and the film was patterned by photolithography to produce a gate electrode wire. Further, a coating-type insulating film composed of methylsilsesquioxane was formed thereon, and baked at 230° C. to form a substrate for a semiconductor.

[0069] The polyimide substrate was washed in the following manner. A step of ultrasonically washing the polyimide substrate in acetone with a purity of 99% or more for one minute and then a step of washing the substrate ultrasonically in pure water for five minutes were carried out twice, respectively. After the washing, the pure water was blowed away by an N2 gas. Then, the substrate was irradiated with ultraviolet (UV) lights at wavelengths of 184.9 nm and 253.7 nm at an intensity of 100 mW for an irradiation time of 20 seconds to ...

examples 2 to 17

[0084] Each transistor was produced in the same manner as in Example 1, while the copolymerization rate (B / A) of the polymer layer on the insulating film was changed in the range of 0.001 to 0.04. The results are shown in Table 1.

TABLE 1Comparison of copolymerization ratio of polymer layerwith transistor characteristics(Film thickness: 20 nm)CopolymerizationConditionMobilityON / OFFVthExamplerateof coating(cm2 / Vs)ratio(V)10.011Good1.122.20E+08−520.001Good0.652.90E+08−1230.002Good0.683.20E+08−1540.003Good0.765.20E+08−1650.004Good0.834.80E+08−1860.005Good0.755.10E+08−1970.006Good0.696.20E+08−1580.007Good0.898.20E+08−1290.008Good1.057.70E+08−19100.009Good1.129.25E+08−21110.01Good1.351.23E+08−22120.015Good1.21.22E+08−23130.02Good1.021.02E+08−15140.025Good0.66.50E+07−12150.03Good0.63.20E+07−12160.035Good0.31.20E+07−6170.04Good0.329.50E+06−5

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Abstract

The present invention provides an organic semiconductor device, which can be produced uniformly on a large substrate, having a high mobility and capable of greatly modulating the drain current by varying the voltage applied to a gate electrode. The present invention provides an organic semiconductor device having at least a substrate, an organic semiconductor, a gate insulating film and conductors, and having electrodes for applying bias, wherein a polymer layer, which is different from the gate insulating film, is provided in contact with the organic semiconductor, and the polymer layer is formed of a copolymer of methyl methacrylate and divinylbenzene, or the like; a process for producing the organic semiconductor device; and an organic semiconductor apparatus using the organic semiconductor device.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic semiconductor device, a process for producing the same, and an active matrix display apparatus or an organic semiconductor apparatus such as an IC tag, having the organic semiconductor device. BACKGROUND ART [0002] In recent years, a great progress has been made for an organic thin-film transistor (hereinafter referred to as “organic TFT”). Organic TFTs are advantageously used in that the organic TFTs can be produced at a low temperature as compared with inorganic TFTs, and an inexpensive resin substrate as a flexible substrate can be used. Because of these advantages, organic TFTs are expected to be applied to a low-cost IC technology for a smart card, electronic tag, display, or the like. [0003] A general organic TFT is composed of a substrate, a gate electrode, a gate insulating film, a source electrode, a drain electrode and an organic semiconductor. By changing a voltage applied to the gate electrode (gate volta...

Claims

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Application Information

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IPC IPC(8): C08F32/08C08F220/14C08F220/18H01L21/312C08F12/00H01L21/336H01L29/786H01L51/00H01L51/05H01L51/30H01L51/40
CPCH01L21/312H01L51/0021H01L51/0545H01L51/0529H01L51/0052H01L21/02282H01L21/02118H10K71/60H10K85/615H10K10/474H10K10/466
Inventor UNNO, AKIRASATO, NAOTAKEMIYAZAKI, HAJIMEDOI, NORIYUKI
Owner CANON KK
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